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11.发明授权Method and apparatus for surface processing of a substrate using an energetic particle beam 有权使用能量粒子束对衬底进行表面处理的方法和装置公开(公告)号：US09206500B2
公开(公告)日：2015-12-08
申请号：US12212844
申请日：2008-09-18
申请人： Boris Druz , Roger P. Fremgen, Jr. , Alan V. Hayes , Viktor Kanarov , Robert Krause , Ira Reiss , Piero Sferlazzo
发明人： Boris Druz , Roger P. Fremgen, Jr. , Alan V. Hayes , Viktor Kanarov , Robert Krause , Ira Reiss , Piero Sferlazzo
IPC分类号： C23C14/04 , C23C14/22 , H01J37/20 , H01J37/302 , H01J37/317
CPC分类号： H01J37/3488 , C23C14/044 , C23C14/221 , C23C14/46 , H01J37/20 , H01J37/302 , H01J37/317 , H01J37/32752 , H01J37/3441 , H01J37/3476 , H01J2237/0245 , H01J2237/045 , H01J2237/20207 , H01J2237/20214 , H01J2237/20221 , H01J2237/30472 , H01J2237/3146
摘要： Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.
摘要翻译： 用能量粒子束处理衬底的方法和设备。 衬底上的特征相对于能量粒子束定向，并且通过能量粒子束扫描衬底。 衬底围绕其方位角对称轴周期性地被索引，同时被屏蔽以防止暴露于能量粒子束，以相对于束的主要尺寸重新定向特征。
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公开(公告)号：US08865259B2
公开(公告)日：2014-10-21
申请号：US13156465
申请日：2011-06-09
IPC分类号： H01L31/18 , H01L31/20 , C23C16/54 , C23C16/40 , H01L31/0749 , H01L31/032 , C23C16/30
CPC分类号： C23C16/54 , C23C16/306 , C23C16/407 , C23C16/545 , H01L31/0322 , H01L31/0749 , H01L31/18 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.
摘要翻译： 公开了一种用于制造装置的在线化学气相沉积方法和系统。 该方法包括通过具有多个沉积模块的沉积室输送幅材或离散基板。 在通过第一沉积模块，第二沉积模块和第三沉积模块的过程中，缓冲层，窗口层和透明导电层分别沉积到衬底上。 有利地，用于产生缓冲层，窗口层和透明导电层的步骤在单个沉积室的共同真空环境中顺序进行，并且消除了使用常规化学浴沉积工艺沉积缓冲层。 该方法适用于制造不同类型的器件，包括各种类型的太阳能电池，如铜铟镓二硒化物太阳能电池。
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公开(公告)号：US20120219713A1
公开(公告)日：2012-08-30
申请号：US13469515
申请日：2012-05-11
IPC分类号： C23C16/46 , C23C16/455
CPC分类号： C23C16/54 , C23C16/45565 , C23C16/45574 , C23C16/45578 , C23C16/46 , H01L21/67109 , H01L21/6719 , H01L21/68771
摘要： Described is a parallel batch CVD system that includes a pair of linear deposition chambers in a parallel arrangement and a robotic loading module disposed between the chambers. Each chamber includes a linear arrangement of substrate receptacles, gas injectors to supply at least one gas in a uniform distribution across the substrates, and a heating module for uniformly controlling a temperature of the substrates. The robotic loading module is configured for movement in a direction parallel to a length of each of the chambers and includes at least one cassette for carrying substrates to be loaded into the substrate receptacles of the chambers. The parallel batch CVD system is suitable for high volume processing of substrates. The CVD processes performed in the chambers can be the same process. Alternatively, the CVD processes may be different and substrates processed in one chamber may be subsequently processed in the other chamber.
摘要翻译： 描述了一种平行批量CVD系统，其包括平行布置的一对线性沉积室和设置在室之间的机器人装载模块。 每个室包括衬底容器的线性布置，用于以均匀分布供应至少一种气体的衬底的气体注入器，以及用于均匀地控制衬底的温度的加热模块。 机器人装载模块被配置为沿平行于每个室的长度的方向运动，并且包括至少一个用于承载待加载到室的基板容器中的衬底的盒。 平行批量CVD系统适用于大量的基板处理。 在腔室中进行的CVD工艺可以是相同的过程。 或者，CVD工艺可以不同，并且在一个室中处理的衬底可以随后在另一个室中进行处理。
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公开(公告)号：US08225527B2
公开(公告)日：2012-07-24
申请号：US12832229
申请日：2010-07-08
IPC分类号： F26B11/02
CPC分类号： C23C14/50 , C23C14/562
摘要： Described are an apparatus and a method for cooling a web. The apparatus includes an inner cylinder having a void therein and configured for coupling to a gas source. The apparatus also includes an outer cylinder having an inner surface, an outer surface to support a web and apertures between the inner and outer surfaces. The outer cylinder rotates about the inner cylinder so that gas provided to the void of the inner cylinder flows through the apertures that are adjacent to the void and passes to the outer surface of the outer cylinder to increase the heat transfer between the web and the outer cylinder. The volume of gas introduced into the vacuum deposition chamber during a process run is thereby limited. Advantageously, the apparatus enables higher deposition rates and increased productivity.
摘要翻译： 描述了一种用于冷却网的装置和方法。 该装置包括其中具有空隙的内筒，并且构造成用于联接到气源。 该装置还包括具有内表面的外圆柱体，用于支撑腹板的外表面和内表面和外表面之间的孔。 外筒围绕内筒旋转，使得提供到内筒的空隙的气体流过与空隙相邻的孔，并传递到外筒的外表面，以增加腹板与外筒之间的热传递 圆筒。 因此，在处理运行期间引入真空沉积室的气体的体积受到限制。 有利地，该装置能够实现更高的沉积速率和更高的生产率。
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公开(公告)号：US20120034734A1
公开(公告)日：2012-02-09
申请号：US13180693
申请日：2011-07-12
IPC分类号： H01L31/18
CPC分类号： H01L31/206 , H01L31/0322 , H01L31/0687 , Y02E10/541 , Y02E10/544 , Y02P70/521
摘要： Described are embodiments of methods for depositing a copper indium gallium diselenide (CIGS) film on a substrate, such as a web substrate or a discrete substrate. In various embodiments, an incremental layer of indium is deposited followed by deposition of a top incremental layer of copper gallium to create a multi-layer structure that is subsequently selenized. By capping the multi-layer structure with the copper gallium layer, the depletion of indium during the selenization of the multi-layer is reduced or eliminated. Additional multi-layers, each having a copper gallium cap layer, are formed and selenized to create the CIGS film. Optionally, the indium content and gallium content in each multi-layer are varied from the indium content and gallium content of one or more of the other multi-layers to achieve desired content gradients in the CIGS film.
摘要翻译： 描述了在诸如幅材衬底或离散衬底的衬底上沉积铜铟镓硒（CIGS）膜的方法的实施例。 在各种实施例中，沉积增量的铟层，随后沉积铜镓的顶部增量层以产生随后被硒化的多层结构。 通过用铜镓层覆盖多层结构，减少或消除了在多层硒化过程中铟的耗尽。 形成具有铜镓盖层的附加多层并进行硒化以产生CIGS膜。 任选地，每个多层中的铟含量和镓含量从一种或多种其它多层的铟含量和镓含量变化，以在CIGS膜中实现期望的内容梯度。
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公开(公告)号：US20120006520A1
公开(公告)日：2012-01-12
申请号：US12832229
申请日：2010-07-08
IPC分类号： F28F7/00
CPC分类号： C23C14/50 , C23C14/562
摘要： Described are an apparatus and a method for cooling a web. The apparatus includes an inner cylinder having a void therein and configured for coupling to a gas source. The apparatus also includes an outer cylinder having an inner surface, an outer surface to support a web and apertures between the inner and outer surfaces. The outer cylinder rotates about the inner cylinder so that gas provided to the void of the inner cylinder flows through the apertures that are adjacent to the void and passes to the outer surface of the outer cylinder to increase the heat transfer between the web and the outer cylinder. The volume of gas introduced into the vacuum deposition chamber during a process run is thereby limited. Advantageously, the apparatus enables higher deposition rates and increased productivity.
摘要翻译： 描述了一种用于冷却网的装置和方法。 该装置包括其中具有空隙的内筒，并且构造成用于联接到气源。 该装置还包括具有内表面的外圆柱体，用于支撑腹板的外表面和内表面和外表面之间的孔。 外筒围绕内筒旋转，使得提供到内筒的空隙的气体流过与空隙相邻的孔，并传递到外筒的外表面，以增加腹板与外筒之间的热传递 圆筒。 因此，在处理运行期间引入真空沉积室的气体的体积受到限制。 有利地，该装置能够实现更高的沉积速率和更高的生产率。
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公开(公告)号：US20100291308A1
公开(公告)日：2010-11-18
申请号：US12466221
申请日：2009-05-14
申请人： Piero Sferlazzo , Martin Klein
发明人： Piero Sferlazzo , Martin Klein
CPC分类号： C23C14/562 , C23C14/541
摘要： A deposition system includes a drum for supporting a web substrate during deposition that defines a plurality of apertures in an outer surface for passing cooling gas. A gas manifold includes an input that is coupled to an output of a gas source and at least one output that is coupled to the plurality of apertures in the outer surface of the drum. The gas manifold provides gas to the plurality of apertures that flows between the outer surface of the drum and the web substrate, thereby increasing heat transfer from the web substrate to the drum. At least one deposition source is positioned so that material deposits on the web substrate.
摘要翻译： 沉积系统包括用于在沉积期间支撑卷材基材的滚筒，其在外表面中限定多个孔，用于通过冷却气体。 气体歧管包括耦合到气体源的输出的输入端和耦合到滚筒的外表面中的多个孔的至少一个输出。 气体歧管为在滚筒的外表面和幅材基底之间流动的多个孔提供气体，从而增加从幅材基底到滚筒的热传递。 定位至少一个沉积源，使得材料沉积在幅材基材上。
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公开(公告)号：US20080264341A1
公开(公告)日：2008-10-30
申请号：US11740592
申请日：2007-04-26
申请人： Boris Druz , Ivan I. Aksenov , Olexandr A. Luchaninov , Volodymyr E. StreInytskiy , Volodymyr V. Vasylyev , Isaak Zaritskiy , Piero Sferlazzo
发明人： Boris Druz , Ivan I. Aksenov , Olexandr A. Luchaninov , Volodymyr E. StreInytskiy , Volodymyr V. Vasylyev , Isaak Zaritskiy , Piero Sferlazzo
IPC分类号： C23C16/44
CPC分类号： C23C14/325 , C23C14/165 , H01J37/32055 , H01J37/3266
摘要： Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions.
摘要翻译： 阴极真空电弧涂层沉积设备。 该装置包括混合室，从混合室的第一端壁突出的至少一个输入管道和从混合室的第二端壁突出的输出管道。 与每个输入管道耦合的是等离子体源，其适于将涂覆材料的离子流排放到混合室中，其随后被引导到输出管道。 围绕混合室的侧壁设置的第一螺线管线圈在混合室内产生用于转向离子流的第一磁场。 第二螺线管线圈设置成与第一端壁相邻并且与输出管道基本上同轴对准。 第二螺线管线圈在混合室内产生用于转向第一离子流的第二磁场。 电流在相反的螺线管方向上流过第一和第二螺线管线圈。
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公开(公告)号：US06530733B2
公开(公告)日：2003-03-11
申请号：US09917223
申请日：2001-07-27
IPC分类号： B65G4907
CPC分类号： H01L21/67346 , C23C14/50 , H01L21/68 , Y10S414/135 , Y10S414/139
摘要： A substrate processing pallet has a top surface and a plurality of side surfaces. The top surface has at least one recess adapted to receive a substrate. The recess includes a support structure adapted to contact a portion of a substrate seated in the recess and a plurality of apertures each adapted to accommodate a lift pin. Lift pins can extend through the apertures initially to support the substrate and retract to deposit the substrate onto the support structure. A side surface includes a process positioning feature adapted to engage with a feature located in a process chamber to position the pallet. A side surface includes a positioning feature adapted to engage with an end effector alignment feature to position the pallet with respect to the end effector during transport. A side surface includes support features adapted to engage with end effector support features to support the pallet during transport.
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公开(公告)号：US06217272B1
公开(公告)日：2001-04-17
申请号：US09404516
申请日：1999-09-23
申请人： David Felsenthal , Chunghsin Lee , Piero Sferlazzo
发明人： David Felsenthal , Chunghsin Lee , Piero Sferlazzo
IPC分类号： B65G4907
CPC分类号： H01J37/3429 , C23C14/027 , C23C14/3407 , C23C14/35 , C23C14/352 , C23C14/566 , C23C14/568 , H01J37/3405 , Y10S414/135 , Y10S414/139 , Y10S414/141
摘要： An apparatus for simultaneously transporting and processing substrates is described. The apparatus includes a load lock that stores at least one substrate prior to processing and that stores at least one substrate after processing. A first transport mechanism transports at least one substrate into and out of the load lock. A multi-stage elevator is adapted to receive the first transport mechanism. A first process chamber is vertically disposed from the multi-stage elevator. The multi-stage elevator vertically transports at least one substrate into and out of the first process chamber. A second process chamber may be coupled to the multi-stage elevator. A second transport mechanism transports at least one substrate between the multi-stage elevator and the second process chamber.
摘要翻译： 描述用于同时传送和处理衬底的装置。 该装置包括在处理之前存储至少一个基板并且在处理之后存储至少一个基板的负载锁定。 第一输送机构将至少一个基板输送到和从负载锁定中移出。 多级电梯适于接收第一传送机构。 第一处理室从多级电梯垂直设置。 多级电梯垂直地将至少一个基板输送到第一处理室中和从第一处理室排出。 第二处理室可以耦合到多级电梯。 第二传送机构在多级电梯和第二处理室之间输送至少一个衬底。
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