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    APPARATUS FOR CATHODIC VACUUM-ARC COATING DEPOSITION
    4.
    发明申请
    APPARATUS FOR CATHODIC VACUUM-ARC COATING DEPOSITION 有权
    用于阴极真空涂层沉积的装置

    公开(公告)号：US20080264341A1

    公开(公告)日：2008-10-30

    申请号：US11740592

    申请日：2007-04-26

    申请人： Boris Druz ,  Ivan I. Aksenov ,  Olexandr A. Luchaninov ,  Volodymyr E. StreInytskiy ,  Volodymyr V. Vasylyev ,  Isaak Zaritskiy ,  Piero Sferlazzo

    发明人： Boris Druz ,  Ivan I. Aksenov ,  Olexandr A. Luchaninov ,  Volodymyr E. StreInytskiy ,  Volodymyr V. Vasylyev ,  Isaak Zaritskiy ,  Piero Sferlazzo

    IPC分类号： C23C16/44

    CPC分类号： C23C14/325 ,  C23C14/165 ,  H01J37/32055 ,  H01J37/3266

    摘要： Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions.

    摘要翻译： 阴极真空电弧涂层沉积设备。 该装置包括混合室，从混合室的第一端壁突出的至少一个输入管道和从混合室的第二端壁突出的输出管道。 与每个输入管道耦合的是等离子体源，其适于将涂覆材料的离子流排放到混合室中，其随后被引导到输出管道。 围绕混合室的侧壁设置的第一螺线管线圈在混合室内产生用于转向离子流的第一磁场。 第二螺线管线圈设置成与第一端壁相邻并且与输出管道基本上同轴对准。 第二螺线管线圈在混合室内产生用于转向第一离子流的第二磁场。 电流在相反的螺线管方向上流过第一和第二螺线管线圈。

    Apparatus for cathodic vacuum-arc coating deposition
    5.
    发明授权
    Apparatus for cathodic vacuum-arc coating deposition 有权
    阴极真空电弧涂层沉积设备

    公开(公告)号：US08157976B2

    公开(公告)日：2012-04-17

    申请号：US11740592

    申请日：2007-04-26

    申请人： Boris Druz ,  Ivan I. Aksenov ,  Olexandr A. Luchaninov ,  Volodymyr E. Strelnytskiy ,  Volodymyr V. Vasylyev ,  Isaak Zaritskiy ,  Piero Sferlazzo

    发明人： Boris Druz ,  Ivan I. Aksenov ,  Olexandr A. Luchaninov ,  Volodymyr E. Strelnytskiy ,  Volodymyr V. Vasylyev ,  Isaak Zaritskiy ,  Piero Sferlazzo

    IPC分类号： C23C14/00 ,  C23C16/00 ,  H01L21/306

    CPC分类号： C23C14/325 ,  C23C14/165 ,  H01J37/32055 ,  H01J37/3266

    摘要： Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions.

    摘要翻译： 阴极真空电弧涂层沉积设备。 该装置包括混合室，从混合室的第一端壁突出的至少一个输入管道和从混合室的第二端壁突出的输出管道。 与每个输入管道耦合的是等离子体源，其适于将涂覆材料的离子流排放到混合室中，其随后被引导到输出管道。 围绕混合室的侧壁设置的第一螺线管线圈在混合室内产生用于转向离子流的第一磁场。 第二螺线管线圈设置成与第一端壁相邻并且与输出管道基本上同轴对准。 第二螺线管线圈在混合室内产生用于转向第一离子流的第二磁场。 电流在相反的螺线管方向上流过第一和第二螺线管线圈。

    LINEAR BATCH CHEMICAL VAPOR DEPOSITION SYSTEM
    6.
    发明申请
    LINEAR BATCH CHEMICAL VAPOR DEPOSITION SYSTEM 有权
    线性化学蒸气沉积系统

    公开(公告)号：US20110293831A1

    公开(公告)日：2011-12-01

    申请号：US12787082

    申请日：2010-05-25

    申请人： Piero Sferlazzo

    发明人： Piero Sferlazzo

    IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00

    CPC分类号： C23C16/4584 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/67109 ,  H01L21/67784 ,  H01L21/68771

    摘要： Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.

    摘要翻译： 描述了一种线性分批CVD系统，其包括沉积室，一个或多个衬底载体，气体注入器和加热系统。 每个衬底载体设置在沉积室中，并且具有至少一个容纳构造成容纳衬底的插座。 衬底载体被配置成将衬底保持在线性构型。 每个气体喷射器包括端口，该端口被配置成沿着一个或多个基板提供均匀分布的气体。 加热系统包括至少一个加热元件和用于均匀地控制基板的温度的加热控制模块。 该系统适用于基板的高体积CVD处理。 沉积室的窄宽使得前体气体能够沿反应室的长度均匀地分布在衬底上，并且与传统的沉积室相比允许更多数量的衬底被加工。

    Substrate processing pallet and related substrate processing method and machine
    7.
    发明授权
    Substrate processing pallet and related substrate processing method and machine 有权
    基板加工托盘及相关基板加工方法及机器

    公开(公告)号：US06821912B2

    公开(公告)日：2004-11-23

    申请号：US09917224

    申请日：2001-07-27

    申请人： Martin P. Klein ,  David Felsenthal ,  Piero Sferlazzo

    发明人： Martin P. Klein ,  David Felsenthal ,  Piero Sferlazzo

    IPC分类号： H01L2131

    CPC分类号： H01L21/67346 ,  C23C14/50 ,  C23C14/568 ,  H01L21/68 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/138 ,  Y10S414/14 ,  Y10S414/141

    摘要： A substrate processing pallet has a top surface and a plurality of side surfaces. The top surface has at least one recess adapted to receive a substrate. The recess includes a support structure adapted to contact a portion of a substrate seated in the recess and a plurality of apertures each adapted to accommodate a lift pin. Lift pins can extend through the apertures initially to support the substrate and retract to deposit the substrate onto the support structure. A side surface includes a process positioning feature adapted to engage with a feature located in a process chamber to position the pallet. A side surface includes a positioning feature adapted to engage with an end effector alignment feature to position the pallet with respect to the end effector during transport. A side surface includes support features adapted to engage with end effector support features to support the pallet during transport.

    摘要翻译： 基板处理托盘具有顶表面和多个侧表面。 顶表面具有至少一个适于容纳衬底的凹部。 凹部包括适于接触位于凹部中的基板的一部分的支撑结构以及适于容纳升降销的多个孔。 提升销可以最初延伸穿过孔，以支撑基板并缩回以将基板沉积到支撑结构上。 侧表面包括适于与位于处理室中的特征接合以便定位托盘的过程定位特征。 侧表面包括适于与端部执行器对准特征接合的定位特征，以在运输期间相对于端部执行器定位托盘。 侧表面包括适于在运输期间与末端执行器支撑特征相接合以支撑托盘的支撑特征。

    Dual-scan thin film processing system
    8.
    发明授权
    Dual-scan thin film processing system 失效
    双扫薄膜处理系统

    公开(公告)号：US06669824B2

    公开(公告)日：2003-12-30

    申请号：US09840394

    申请日：2001-04-23

    申请人： Piero Sferlazzo ,  Chunghsin Lee

    发明人： Piero Sferlazzo ,  Chunghsin Lee

    IPC分类号： C23C1434

    CPC分类号： C23C14/228 ,  C23C14/044 ,  C23C14/46

    摘要： A deposition system is described. The deposition system includes a deposition source that generates deposition flux comprising neutral atoms and molecules. A shield defining an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux through the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned adjacent to the shield. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion.

    摘要翻译： 描述了沉积系统。 沉积系统包括产生包含中性原子和分子的沉积通量的沉积源。 限定孔径的屏蔽件位于沉积焊剂的路径中。 屏蔽层将沉积磁通通过孔径，并且基本上阻止沉积磁通在其它地方传播通过屏蔽层。 衬底支撑件邻近屏蔽件定位。 双扫描系统以第一和第二运动相对于孔径扫描基板支撑。

    SYSTEM AND METHOD FOR FABRICATING THIN-FILM PHOTOVOLTAIC DEVICES
    10.
    发明申请
    SYSTEM AND METHOD FOR FABRICATING THIN-FILM PHOTOVOLTAIC DEVICES 审中-公开
    用于制造薄膜光伏器件的系统和方法

    公开(公告)号：US20120034733A1

    公开(公告)日：2012-02-09

    申请号：US13101538

    申请日：2011-05-05

    申请人： Piero Sferlazzo ,  Thomas Michael Lampros

    发明人： Piero Sferlazzo ,  Thomas Michael Lampros

    IPC分类号： H01L31/0272 ,  C23C16/06

    CPC分类号： C23C14/5866 ,  C23C14/165 ,  C23C14/205 ,  C23C14/562 ,  H01L31/18

    摘要： Described are a system and a method for depositing a thin film on a substrate. In some embodiments, the system includes a substrate transport system to transport a plurality of discrete substrates, such as glass substrates or wafers, along a closed path. The system also includes a metal deposition zone, a selenization zone and a cooling chamber each disposed on the closed path. During transport along the closed path, the metal deposition zone deposits a layer of a composite metal onto the discrete substrates and the selenization zone selenizes the layer of the composite metal. The cooling zone cools the discrete substrates prior to a subsequent pass through the metal deposition zone and the selenization zone.

    摘要翻译： 描述了在衬底上沉积薄膜的系统和方法。 在一些实施例中，该系统包括沿封闭路径输送多个离散基板（例如玻璃基板或晶片）的基板输送系统。 该系统还包括金属沉积区，硒化区和每个设置在封闭路径上的冷却室。 在沿着封闭路径运输的过程中，金属沉积区将一层复合金属沉积在离散的基底上，硒化区将复合金属层的硒化。 在随后通过金属沉积区和硒化区之前，冷却区冷却离散的衬底。