公开(公告)号：US20130327147A1

公开(公告)日：2013-12-12

申请号：US13880388

申请日：2011-09-19

申请人： Ando Feyh ,  Christina Leinenbach ,  Axel Franke ,  Gary O'Brien

发明人： Ando Feyh ,  Christina Leinenbach ,  Axel Franke ,  Gary O'Brien

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/0831

摘要： A micromechanical device measures an acceleration, a pressure or the like. It comprises a substrate having at least one fixed electrode, a seismic mass moveably arranged on the substrate, at least one ground electrode, which is arranged on the seismic mass, and resetting means for returning the seismic mass into an initial position, wherein the fixed electrode and the ground electrode are configured in one measurement plane for measuring an acceleration, a pressure or the like in the measurement plane, and wherein the fixed electrode and the ground electrode are configured for measuring an acceleration, pressure or the like acting on the seismic mass perpendicular to the measurement plane. The disclosure likewise relates to a corresponding method and a corresponding use.

摘要翻译： 微机械装置测量加速度，压力等。 它包括具有至少一个固定电极的基板，可移动地布置在基板上的地震块，布置在地震块上的至少一个接地电极，以及用于使地震块返回初始位置的复位装置，其中固定 电极和接地电极被配置在一个测量平面中，用于测量测量平面中的加速度，压力等，并且其中固定电极和接地电极被配置为测量作用在地震上的加速度，压力等 质量垂直于测量平面。 本公开同样涉及相应的方法和相应的用途。

公开(公告)号：US10545108B2

公开(公告)日：2020-01-28

申请号：US15539999

申请日：2015-12-28

申请人： Robert Bosch GmbH ,  Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： G01N33/00 ,  G01N27/12 ,  H01L21/02

摘要： A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected.

公开(公告)号：US10060888B2

公开(公告)日：2018-08-28

申请号：US15535522

申请日：2015-12-16

申请人： ROBERT BOSCH GMBH ,  Ando Feyh ,  Gary O'Brien ,  Bongsang Kim ,  Jochen Stehle

发明人： Ando Feyh ,  Gary O'Brien ,  Bongsang Kim ,  Jochen Stehle

IPC分类号： G01N30/60 ,  G01N30/02 ,  B81C1/00 ,  B81B1/00

CPC分类号： G01N30/6095 ,  B81B1/002 ,  B81C1/00119 ,  G01N30/60 ,  G01N2030/025

摘要： A micro gas chromatograph includes one or more separator columns formed within a device layer. The separator columns have small channel cross sections and long channel lengths with atomic-smooth channel sidewalls enabling a high channel packaging density, multiple channels positioned on top of each other, and channel segments that are thermally decoupled from the substrates. The micro gas-chromatograph also enables electrostatic and thermal actuators to be positioned in close proximity to the separator columns such that the material passing through the columns is one or more of locally heated, locally cooled, and electrically biased.

公开(公告)号：US20160327392A1

公开(公告)日：2016-11-10

申请号：US15108414

申请日：2014-12-30

申请人： Bonsang Kim ,  Ando Feyh ,  Andrew Graham ,  Gary O'Brien ,  Michael Baus ,  Ralf Maier ,  Mariusz Koc ,  Robert Bosch GmbH

发明人： Bonsang Kim ,  Ando Feyh ,  Andrew Graham ,  Gary O'Brien ,  Michael Baus ,  Ralf Maier ,  Mariusz Koc

IPC分类号： G01C19/5769

CPC分类号： G01C19/5769 ,  B81B7/0016 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2207/012 ,  G01P1/003 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0882 ,  H01L2224/48137 ,  H01L2924/16152

摘要： In one embodiment, a sensor includes a rigid wafer outer body, a first cavity located within the rigid wafer outer body, a first spring supported by the rigid wafer outer body and extending into the first cavity, a second spring supported by the rigid wafer outer body and extending into the first cavity, and a first sensor structure supported by the first spring and the second spring within the first cavity.

摘要翻译： 在一个实施例中，传感器包括刚性晶片外部主体，位于刚性晶片外部主体内的第一腔体，由刚性晶片外部主体支撑并延伸到第一腔体中的第一弹簧，由刚性晶片外部支撑的第二弹簧 并且延伸到第一腔体中，以及由第一弹簧和第二弹簧支撑在第一腔内的第一传感器结构。

公开(公告)号：US10317211B2

公开(公告)日：2019-06-11

申请号：US15108414

申请日：2014-12-30

申请人： Robert Bosch GmbH ,  Bongsang Kim ,  Ando Feyh ,  Andrew Graham ,  Gary O'Brien ,  Michael Baus ,  Ralf Maier ,  Mariusz Koc

发明人： Bongsang Kim ,  Ando Feyh ,  Andrew Graham ,  Gary O'Brien ,  Michael Baus ,  Ralf Maier ,  Mariusz Koc

IPC分类号： G01P1/02 ,  G01C19/5769 ,  G01P15/08 ,  G01D5/241 ,  G01P1/00 ,  G01P15/18

摘要： In one embodiment, a sensor includes a rigid wafer outer body. A first cavity is located within the rigid wafer outer body, and a first vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity. A second vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity, and a first sensor packaging is supported by the first vibration isolating spring and the second vibration isolating spring within the first cavity.

公开(公告)号：US20180011043A1

公开(公告)日：2018-01-11

申请号：US15539999

申请日：2015-12-28

申请人： Ashwin K. SAMARAO ,  Gary O'BRIEN ,  Ando FEYH ,  Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： G01N27/12 ,  G01N33/00 ,  H01L21/02

CPC分类号： G01N27/127 ,  G01N33/004 ,  G01N33/0047 ,  H01L21/02565 ,  H01L21/02603 ,  H01L21/0262

摘要： A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected.

公开(公告)号：US08749013B2

公开(公告)日：2014-06-10

申请号：US12302677

申请日：2007-04-23

申请人： Hubert Benzel ,  Simon Armbruster ,  Arnim Hoechst ,  Christoph Schelling ,  Ando Feyh

发明人： Hubert Benzel ,  Simon Armbruster ,  Arnim Hoechst ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L31/058

CPC分类号： B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2207/015 ,  B81C2201/0109 ,  G01J5/06 ,  G01J5/20

摘要： A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.

摘要翻译： 特别是用于空间分辨检测的传感器包括基板，至少一个微图案化的传感器元件，其具有值随温度变化的电特性，以及在空腔上方的至少一个隔膜，传感器元件设置在 所述至少一个隔膜的下侧，并且所述传感器元件经由连接线接触，所述连接线在隔膜的顶部或下方延伸。 特别地，多个传感器元件可以形成为通过外延形成的单晶层内的二极管像素。 可以在隔膜内形成以弹性和绝缘方式容纳各个传感器元件的悬挂弹簧。

公开(公告)号：US08556504B2

公开(公告)日：2013-10-15

申请号：US13061670

申请日：2009-07-02

申请人： Ingo Herrmann ,  Daniel Herrmann ,  Frank Freund ,  Ando Feyh ,  Martin Eckardt

发明人： Ingo Herrmann ,  Daniel Herrmann ,  Frank Freund ,  Ando Feyh ,  Martin Eckardt

IPC分类号： G01K7/00 ,  B32B3/00

CPC分类号： H01L27/14669 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/06 ,  G01J5/20 ,  H01L31/09

摘要： A micro-structured reference element for use in a sensor having a substrate and a dielectric membrane. The reference element has an electrical property which changes its value on the basis of temperature. The reference element is arranged with respect to the substrate so that the reference element is (i) electrically insulated from the substrate, and (ii) thermally coupled to the substrate. The reference element is arranged on the underside of the dielectric membrane. The reference element and side walls of the substrate define a circumferential cavern therebetween, which is also bounded by the dielectric membrane, arranged between them. The dielectric membrane is connected to the substrate. A surface area of the reference element which is covered by the dielectric membrane is greater than or equal to 10% and less than or equal to 100% of the possible coverable surface area. A surface of the cavern which is covered by the dielectric membrane is greater than or equal to 50% and less than or equal to 100% of the possible coverable surface. An edge of the reference element which faces the dielectric membrane has greater than or equal to 50% and less than or equal to 100% of its extent contacted by the dielectric membrane. Sections of the side walls of the cavern which face the dielectric membrane have greater than or equal to 50% and less than or equal to 100% of the possible size contacted by the dielectric membrane.

摘要翻译： 一种用于具有基底和电介质膜的传感器中的微结构参考元件。 参考元件具有基于温度改变其值的电性质。 参考元件相对于衬底布置，使得参考元件（i）与衬底电绝缘，和（ii）热耦合到衬底。 参考元件布置在电介质膜的下侧。 衬底的参考元件和侧壁在它们之间限定周向的洞穴，它们也被布置在它们之间的电介质膜界定。 电介质膜与基板连接。 由电介质膜覆盖的参考元件的表面积大于或等于可能可覆盖表面积的10％且小于或等于100％。 由电介质膜覆盖的洞穴的表面大于或等于可能可覆盖表面的50％且小于或等于100％。 面向电介质膜的参考元件的边缘具有大于或等于其与电介质膜接触的程度的50％且小于或等于100％。 面向电介质膜的洞穴的侧壁的截面具有大于或等于电介质膜接触的可能尺寸的50％且小于或等于100％。

公开(公告)号：US20130098154A1

公开(公告)日：2013-04-25

申请号：US13635581

申请日：2011-01-19

申请人： Reinhard Neul ,  Christian Rettig ,  Achim Trautmann ,  Daniel Christoph Meisel ,  Alexander Buhmann ,  Manuel Engesser ,  Ando Feyh

发明人： Reinhard Neul ,  Christian Rettig ,  Achim Trautmann ,  Daniel Christoph Meisel ,  Alexander Buhmann ,  Manuel Engesser ,  Ando Feyh

IPC分类号： G01P15/09

CPC分类号： G01P15/09 ,  G01P15/0802 ,  G01P15/12 ,  G01P15/123

摘要： A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track.

摘要翻译： 压阻微机电传感器部件包括基板，抗震块，至少一个压阻棒和测量装置。 地震质量从基板悬挂使其能够偏转。 所述至少一个压阻棒设置在所述基底和所述抗震块之间，并且当所述地震质量被偏转时，所述至少一个压阻棒经受阻力的变化。 至少一个压阻棒具有至少部分地覆盖压阻棒并延伸到衬底的区域中的横向和/或上部和/或下部导体轨道。 测量装置电连接到基板和导体轨道，并且被配置成测量电路的电阻变化，该电阻通过基板通过压阻棒和从压阻棒通过横向和/或上部和/ 或下导体轨道。

公开(公告)号：US08334534B2

公开(公告)日：2012-12-18

申请号：US12590585

申请日：2009-11-10

申请人： Jochen Reinmuth ,  Neil Davies ,  Simon Armbruster ,  Ando Feyh

发明人： Jochen Reinmuth ,  Neil Davies ,  Simon Armbruster ,  Ando Feyh

IPC分类号： H01L31/101

CPC分类号： G01J5/20 ,  G01J5/08 ,  G01J5/0853 ,  H01L27/14649

摘要： A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer.

摘要翻译： 传感器包括至少一个微图案化的二极管像素，其具有在隔膜内，上或下面实现的二极管，并且隔膜依次在空腔上方实现。 二极管通过至少部分地在隔膜中，上或下面实现的电源引线接触，并且二极管实现在多晶半导体层中。 二极管通过两个低掺杂二极管区域或至少一个低掺杂二极管区域实现。 供电线的至少一部分通过共享多晶半导体层的高掺杂电源引线区实现。