公开(公告)号：US07704887B2

公开(公告)日：2010-04-27

申请号：US11334803

申请日：2006-01-17

申请人： Xinyu Fu ,  John Forster ,  Jick Yu ,  Ajay Bhatnagar ,  Praburam Gopalraja

发明人： Xinyu Fu ,  John Forster ,  Jick Yu ,  Ajay Bhatnagar ,  Praburam Gopalraja

IPC分类号： B08B3/00 ,  H01L21/302

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/02068 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/76814

摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.

摘要翻译： 一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。 远程等离子体源产生主要为氢自由基的等离子体。 氢气压力可以保持相对较低，例如在30毫乇。 任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。 在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。 优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。

公开(公告)号：US20050266682A1

公开(公告)日：2005-12-01

申请号：US11185248

申请日：2005-07-19

申请人： Fusen Chen ,  Ling Chen ,  Walter Glenn ,  Praburam Gopalraja ,  Jianming Fu

发明人： Fusen Chen ,  Ling Chen ,  Walter Glenn ,  Praburam Gopalraja ,  Jianming Fu

IPC分类号： C23C14/02 ,  C23C14/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76844 ,  C23C14/022 ,  C23C14/046 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76873

摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

公开(公告)号：US06887786B2

公开(公告)日：2005-05-03

申请号：US10409406

申请日：2003-04-07

申请人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John C. Forster ,  Jick M. Yu

发明人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John C. Forster ,  Jick M. Yu

IPC分类号： C23C14/04 ,  C23C14/06 ,  C23C14/18 ,  C23C14/58 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/185 ,  C23C14/5873 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

摘要翻译： 提供了第一种方法，用于通过在（1）形成在基底上的金属特征的基底上溅射沉积氮化钽层而在衬底上形成阻挡层; （2）形成在所述金属特征上的电介质层; 和（3）形成在电介质层中的通孔以暴露金属特征。 通孔具有侧壁和底部，宽度为约0.18微米或更小。 氮化钽层沉积在通孔的侧壁和底部以及电介质层的场区上; 并且在场区域具有至少约200埃的厚度。 第一种方法还包括在相同的室中在衬底上溅射沉积钽层。 该钽层的厚度在场区域上小于约100埃。 提供其他方面。

公开(公告)号：US06790326B2

公开(公告)日：2004-09-14

申请号：US10171318

申请日：2002-06-13

申请人： Anantha Subramani ,  Umesh Kelkar ,  Jianming Fu ,  Praburam Gopalraja

发明人： Anantha Subramani ,  Umesh Kelkar ,  Jianming Fu ,  Praburam Gopalraja

IPC分类号： C23C1435

CPC分类号： H01J37/3423 ,  H01J37/3405 ,  H01J37/3455

摘要： A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.

摘要翻译： 一种等离子体溅射反应器，其包括具有环形拱顶的靶，其表面面向待溅射涂覆的晶片，并且具有内侧壁和外侧壁以及顶部。 在管状内侧壁之间的靶的后部形成有孔。 与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管 关于目标的中心轴。

公开(公告)号：US06485618B2

公开(公告)日：2002-11-26

申请号：US09917985

申请日：2001-07-30

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

IPC分类号： C23C1434

CPC分类号： H01L21/76844 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

公开(公告)号：US06436251B2

公开(公告)日：2002-08-20

申请号：US09854281

申请日：2001-05-11

申请人： Praburam Gopalraja ,  Jianming Fu ,  Wei Wang

发明人： Praburam Gopalraja ,  Jianming Fu ,  Wei Wang

IPC分类号： C23C1435

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形保险库。 优选地，磁控管包括设置在两个拱顶侧壁之后的相对极性的环形磁体和沿拱顶顶部扫描的具有相对极性的嵌套磁体的小型闭合不平衡磁控管。 嵌套的磁铁沿拱顶旋转。 与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的 铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。

公开(公告)号：US06413382B1

公开(公告)日：2002-07-02

申请号：US09705324

申请日：2000-11-03

申请人： Wei Wang ,  Praburam Gopalraja ,  Jianming Fu ,  Zheng Xu

发明人： Wei Wang ,  Praburam Gopalraja ,  Jianming Fu ,  Zheng Xu

IPC分类号： C23C1435

CPC分类号： H01J37/3444 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.

摘要翻译： 一种磁控溅射反应器，其具有以小于10％且优选小于1％的占空比脉冲的靶，并且还具有面积小于目标区域围绕目标中心旋转的20％的面积的小磁控管，由此非常 在与磁控管区域相邻的脉冲期间产生高等离子体密度。 功率脉冲频率需要与旋转频率不同步，从而磁控管在不同脉冲期间不会覆盖磁控管的相同区域。 有利地，功率脉冲在DC背景水平之上传送足以继续激发等离子体，使得每个脉冲不需要点火。

公开(公告)号：US06409890B1

公开(公告)日：2002-06-25

申请号：US09362917

申请日：1999-07-27

申请人： Howard E. Grunes ,  Zheng Xu ,  Praburam Gopalraja ,  John C. Forster ,  Ralf Hofmann ,  Anantha Subramani

发明人： Howard E. Grunes ,  Zheng Xu ,  Praburam Gopalraja ,  John C. Forster ,  Ralf Hofmann ,  Anantha Subramani

IPC分类号： C23C1435

CPC分类号： H01J37/321 ,  C23C14/044 ,  C23C14/358 ,  H01J37/3447

摘要： Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.

摘要翻译： 实施例包括用于在包括等离子体产生区域和靶子的室中将材料溅射到工件上的装置和方法。 线圈被定位成将能量感应地耦合到等离子体产生区域中以产生等离子体。 主体位于工件和目标之间，以防止一定量的目标材料溅射到工件上。 该主体防止一定量的目标材料溅射到工件上。 身体可以作为暗空间屏蔽，并且抑制身体和目标之间的血浆形成。 主体还可以作为物理屏蔽来阻止溅射的材料积聚在工件上。

公开(公告)号：USD450070S1

公开(公告)日：2001-11-06

申请号：US29090618

申请日：1998-07-13

申请人： Praburam Gopalraja ,  Zheng Xu ,  Michael Rosenstein ,  John C. Forster

设计人： Praburam Gopalraja ,  Zheng Xu ,  Michael Rosenstein ,  John C. Forster

公开(公告)号：US06193855B1

公开(公告)日：2001-02-27

申请号：US09421431

申请日：1999-10-19

申请人： Praburam Gopalraja ,  John Forster

发明人： Praburam Gopalraja ,  John Forster

IPC分类号： C23C1434

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76873

摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A plasma is struck and maintained in a processing region by coupling energy into one or more gases. A target disposed in the processing region provides a source of material to be sputtered and then ionized in the plasma environment. During deposition of material onto the substrate, the plasma density is modulated by varying the energy supplied to the plasma. During a period of plasma decay, a bias to a substrate support member is increased to a relatively higher power to periodically enhance the attraction of positively charged particles to the substrate during the afterglow period of the plasma. In one embodiment, a bias to the target is also modulated.

摘要翻译： 本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。 通过将能量耦合到一个或多个气体中，等离子体被撞击并保持在处理区域中。 设置在处理区域中的靶提供待溅射的材料源，然后在等离子体环境中电离。 在将材料沉积到衬底上时，通过改变供给到等离子体的能量来调制等离子体密度。 在等离子体衰减期间，在等离子体的余辉期间，向衬底支撑构件的偏压增加到相对较高的功率以周期性地增强带正电的微粒对衬底的吸引。 在一个实施例中，对目标的偏置也被调制。