中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

19 records (took 0.013 seconds)

    OVERVOLTAGE PROTECTION SCHEME FOR CONNECTOR PORTS
    11.
    发明申请
    OVERVOLTAGE PROTECTION SCHEME FOR CONNECTOR PORTS 有权

    公开(公告)号：US20210367383A1

    公开(公告)日：2021-11-25

    申请号：US17325463

    申请日：2021-05-20

    Applicant: QUALCOMM Incorporated

    Inventor： Vijayakumar DHANASEKARAN

    IPC: H01R13/713

    Abstract: Certain aspects of the present disclosure generally relate to methods and apparatus for providing overvoltage protection for circuitry coupled to connector ports, such as USB-C ports. One example circuit for overvoltage protection between a connector port and a signal node corresponding to the connector port generally includes a first switch having a first terminal for coupling to the connector port and having a second terminal for coupling to the signal node; a first resistive element coupled in parallel with the first switch; a first transient protection circuit coupled between the signal node and a reference potential node; and a control circuit having an input coupled to the signal node and having a first output coupled to a control input of the first switch.

    CALIBRATING FOR ON-RESISTANCE MISMATCH OF DIGITAL-TO-ANALOG CONVERTER (DAC) SWITCHES
    13.
    发明申请
    CALIBRATING FOR ON-RESISTANCE MISMATCH OF DIGITAL-TO-ANALOG CONVERTER (DAC) SWITCHES 审中-公开
    数模转换器（DAC）开关的耐电阻校准校准

    公开(公告)号：US20170063368A1

    公开(公告)日：2017-03-02

    申请号：US14835222

    申请日：2015-08-25

    Applicant: QUALCOMM INCORPORATED

    Inventor： Dongyang TANG ,  Vijayakumar DHANASEKARAN

    IPC: H03K17/687 ,  H03M1/66 ,  H03M1/10

    CPC classification number: H03M1/66 ,  G05F3/24 ,  H03F1/301 ,  H03F3/3022 ,  H03F2200/453 ,  H03K17/063 ,  H03M1/0612 ,  H03M1/808

    Abstract: Certain aspects of the present disclosure provide methods and apparatus for setting a voltage level for controlling at least one of a first switch or a second switch, such that an on-resistance of the first switch matches an on-resistance of the second switch. One example circuit generally includes a third switch configured to replicate the first switch and a first cascode device connected in cascode with the third switch; a first amplifier configured to drive the first cascode device; a fourth switch configured to replicate the second switch; a second cascode device connected in cascode with the fourth switch; a second amplifier configured to drive the second cascode device; and a third amplifier configured to compare a voltage at a node coupled to the first and second cascode devices with a reference potential and to control the third switch based on the comparison to set the voltage level.

    Abstract translation: 本公开的某些方面提供了用于设置用于控制第一开关或第二开关中的至少一个的电压电平的方法和装置，使得第一开关的导通电阻与第二开关的导通电阻相匹配。 一个示例电路通常包括被配置为复制第一开关的第三开关和与第三开关并联连接的第一共源共用器件; 第一放大器，被配置为驱动所述第一共源共用器件; 配置为复制所述第二开关的第四开关; 与第四开关串联连接的第二共源共用器件; 第二放大器，被配置为驱动所述第二共源共用器件; 以及第三放大器，其被配置为将耦合到所述第一和第二共源共栅器件的节点处的电压与参考电位进行比较，并且基于所述比较来控制所述第三开关以设置所述电压电平。

    FULLY DIFFERENTIAL ESD CIRCUIT FOR HIGH-FREQUENCY APPLICATIONS
    15.
    发明公开
    FULLY DIFFERENTIAL ESD CIRCUIT FOR HIGH-FREQUENCY APPLICATIONS 审中-公开

    公开(公告)号：US20240178662A1

    公开(公告)日：2024-05-30

    申请号：US18070386

    申请日：2022-11-28

    Applicant: QUALCOMM Incorporated

    Inventor： Kshitij YADAV ,  Vijayakumar DHANASEKARAN ,  Khaled Mahmoud ABDELFATTAH ALY ,  Ramkumar SIVAKUMAR

    IPC: H02H9/04

    CPC classification number: H02H9/046

    Abstract: A differential ESD circuit is provided for protecting a pair of differential terminals of an integrated circuit from electrostatic shock. A first diode couples between a first terminal in the pair of differential terminals and a first resistor that couples to a voltage node of the integrated circuit. Similarly, a second diode couples between a second terminal in the pair of differential terminals and a second resistor that couples to the voltage node of the integrated circuit. The first and second resistors isolate the first and second terminals from a capacitive loading that would otherwise exist from the first and second diodes.

Patent Agency Ranking