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公开(公告)号：US20140175602A1
公开(公告)日：2014-06-26
申请号：US14106569
申请日：2013-12-13
Applicant: Renesas Electronics Corporation
Inventor： Takuo Funaya , Hiromi Shigihara , Hisao Shigihara
IPC: H01L49/02
CPC classification number: H01L28/10 , H01L23/49575 , H01L23/5227 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0617 , H01L27/1203 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/06102 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/49113 , H01L2224/49171 , H01L2224/49175 , H01L2224/4945 , H01L2924/10161 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/181 , H01L2924/30107 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
Abstract: Characteristics of a semiconductor device are improved. A semiconductor device has a laminated insulating film formed above a lower-layer inductor. This laminated insulating film includes a first polyimide film, and a second polyimide film formed on the first polyimide film and having a second step between the first polyimide film and the second polyimide film. An upper-layer inductor is formed on the laminated insulating film. Since such a laminated structure of the first and second polyimide films is adopted, the film thickness of the insulating film between the lower-layer and upper-layer inductors can be increased, so that withstand voltage can be improved. Further, the occurrence of a depression or peeling-off due to defective exposure can be reduced, and step disconnection of a Cu (copper) seed layer or a plating defect due to the step disconnection can also be reduced.
Abstract translation: 提高了半导体器件的特性。 半导体器件具有形成在下层电感器上方的层叠绝缘膜。 该层压绝缘膜包括第一聚酰亚胺膜和形成在第一聚酰亚胺膜上的第二聚酰亚胺膜，并且在第一聚酰亚胺膜和第二聚酰亚胺膜之间具有第二步骤。 在层叠绝缘膜上形成上层电感器。 由于采用第一和第二聚酰亚胺膜的这种叠层结构，所以可以增加下层和上层电感器之间的绝缘膜的膜厚度，从而可以提高耐受电压。 此外，可以减少由于曝光不良引起的凹陷或剥离的发生，并且还可以减少由于阶梯断开而导致的Cu（铜）种子层的步骤断开或电镀缺陷。
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公开(公告)号：US10483199B2
公开(公告)日：2019-11-19
申请号：US16048408
申请日：2018-07-30
Applicant: Renesas Electronics Corporation
Inventor： Takayuki Igarashi , Takuo Funaya
IPC: H01L27/08 , H01L23/522 , H01L27/06 , H01L27/12 , H01L23/00 , H01L23/495 , H01L23/528 , H01L23/532 , H01L25/16
Abstract: Characteristics of a semiconductor device are improved. A semiconductor device includes a coil CL1 and a wiring M2 formed on an interlayer insulator IL2, a wiring M3 formed on an interlayer insulator IL3, and a coil CL2 and a wiring M4 formed on the interlayer insulator IL4. Moreover, a distance DM4 between the coil CL2 and the wiring M4 is longer than a distance DM3 between the coil CL2 and the wiring M3 (DM4>DM3). Furthermore, the distance DM3 between the coil CL2 and the wiring M3 is set to be longer than a sum of a film thickness of the interlayer insulator IL3 and a film thickness of the interlayer insulator IL4, which are positioned between the coil CL1 and the coil CL2. In this manner, it is possible to improve an insulation withstand voltage between the coil CL2 and the wiring M4 or the like, where a high voltage difference tend to occur. Moreover, a transformer formation region 1A and a seal ring formation region 1C surrounding a peripheral circuit formation region 1B are formed so as to improve the moisture resistance.
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公开(公告)号：US20180310529A1
公开(公告)日：2018-11-01
申请号：US16029871
申请日：2018-07-09
Applicant: Renesas Electronics Corporation
Inventor： Takuo Funaya , Tomohiro NISHIYAMA , Hiroki SHIBUYA , Manabu OKAMOTO
CPC classification number: A01K29/005 , A01K11/006 , A61B5/0002 , A61B5/11 , A61D17/00 , G01D11/245 , H04W4/70
Abstract: A method for manufacturing an electronic apparatus functioning as a component of a wireless communication system includes providing a lower part formed with a first concave portion, a second concave portion spaced away from the first concave portion, and a third concave portion which couples the first concave portion and the second concave portion, providing an upper part for sealing the first concave portion, the second concave portion, and the third concave portion formed in the lower part, providing a module unit including a sensor which detects a physical quantity, and a radio communication unit which transmits data based on an output signal from the sensor, providing a battery for supplying power to the module unit, coupling the module unit and the battery by a wiring, and after the coupling the module unit and the battery, arranging the module unit in the first concave portion of the lower part.
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公开(公告)号：US10085425B2
公开(公告)日：2018-10-02
申请号：US14752886
申请日：2015-06-27
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Takuo Funaya , Tomohiro Nishiyama , Hiroki Shibuya , Manabu Okamoto
IPC: A61N1/375 , A01K29/00 , H04W4/00 , G01D11/24 , H04W4/70 , A01K11/00 , A61B5/00 , A61D17/00 , A61B5/11
Abstract: An electronic apparatus is provided which, even when the electronic apparatus configuring a node is implanted in the body of an object animal, makes the object animal hard to feel stress and can acquire effective data about the natural behavior and state of the object animal. As shown in FIG. 12, a module unit and a battery are arranged separated from each other. That is, an electronic apparatus according to the present embodiment 1 adopts a case including a first capacity part and a second capacity part both arranged separated from each other to thereby accommodate the module unit in an internal space of the first capacity part and accommodate the battery in an internal space of the second capacity part.
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公开(公告)号：US10062642B2
公开(公告)日：2018-08-28
申请号：US15616151
申请日：2017-06-07
Applicant: Renesas Electronics Corporation
Inventor： Takayuki Igarashi , Takuo Funaya
IPC: H01L27/08 , H01L23/522 , H01L25/16 , H01L23/495 , H01L23/528 , H01L27/06 , H01L27/12 , H01L23/00 , H01L23/532
CPC classification number: H01L23/5227 , H01L23/49503 , H01L23/49541 , H01L23/49575 , H01L23/5283 , H01L23/53214 , H01L23/53223 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/167 , H01L27/0688 , H01L27/1203 , H01L2224/02166 , H01L2224/05554 , H01L2224/45124 , H01L2224/48137 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2924/13055 , H01L2924/00 , H01L2924/00014
Abstract: Characteristics of a semiconductor device are improved. A semiconductor device includes a coil CL1 and a wiring M2 formed on an interlayer insulator IL2, a wiring M3 formed on an interlayer insulator IL3, and a coil CL2 and a wiring M4 formed on the interlayer insulator IL4. Moreover, a distance DM4 between the coil CL2 and the wiring M4 is longer than a distance DM3 between the coil CL2 and the wiring M3 (DM4>DM3). Furthermore, the distance DM3 between the coil CL2 and the wiring M3 is set to be longer than a sum of a film thickness of the interlayer insulator IL3 and a film thickness of the interlayer insulator IL4, which are positioned between the coil CL1 and the coil CL2. In this manner, it is possible to improve an insulation withstand voltage between the coil CL2 and the wiring M4 or the like, where a high voltage difference tend to occur. Moreover, a transformer formation region 1A and a seal ring formation region 1C surrounding a peripheral circuit formation region 1B are formed so as to improve the moisture resistance.
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Patent Agency Ranking
公开(公告)号：US20160000045A1
公开(公告)日：2016-01-07
申请号：US14752886
申请日：2015-06-27
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Takuo Funaya , Tomohiro Nishiyama , Hiroki Shibuya , Manabu Okamoto
CPC classification number: A01K29/005 , A01K11/006 , A61B5/0002 , A61B5/11 , A61D17/00 , G01D11/245 , H04W4/70
Abstract: An electronic apparatus is provided which, even when the electronic apparatus configuring a node is implanted in the body of an object animal, makes the object animal hard to feel stress and can acquire effective data about the natural behavior and state of the object animal. As shown in FIG. 12, a module unit and a battery are arranged separated from each other. That is, an electronic apparatus according to the present embodiment 1 adopts a case including a first capacity part and a second capacity part both arranged separated from each other to thereby accommodate the module unit in an internal space of the first capacity part and accommodate the battery in an internal space of the second capacity part.
Abstract translation: 提供了一种电子设备，即使构成节点的电子装置植入物体动物的身体中，也能够使对象动物难以感受到压力，并且能够获取关于对象动物的自然行为和状态的有效数据。 如图所示。 如图12所示，模块单元和电池被布置成彼此分离。 也就是说，根据本实施例1的电子设备采用包括彼此分离布置的第一电容部分和第二电容部分的壳体，从而将模块单元容纳在第一电容部分的内部空间中并且容纳电池 在第二容量部分的内部空间中。
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公开(公告)号：US12152997B2
公开(公告)日：2024-11-26
申请号：US17587357
申请日：2022-01-28
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Takuo Funaya
Abstract: A reliability prediction method includes: calculating a change of each of a plurality of alloy phases at a bonding portion between an electrode pad and a bonding wire; setting a generation of a metal oxide phase caused by a corrosion reaction, based on an initial crack structure of the bonding portion; calculating an elastic strain energy at each of specified portions of the bonding portion; setting a progress of a crack, based on the elastic strain energy at each of the specified portions; and predicting a lifetime of the semiconductor device, based on a length of the crack due to the progress of the crack.
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公开(公告)号：US10157974B2
公开(公告)日：2018-12-18
申请号：US15799772
申请日：2017-10-31
Applicant: Renesas Electronics Corporation
Inventor： Takuo Funaya , Hiromi Shigihara , Hisao Shigihara
IPC: H01L49/02 , H01L23/495 , H01L23/522 , H01L27/06 , H01L27/12 , H01L23/00
Abstract: A semiconductor device includes a semiconductor substrate having a main surface, a first insulating film formed on the main surface, a first coil formed on the first insulating film, a second insulating film formed on the first coil and having a first main surface and first side surfaces continuous with the first main surface, a third insulating film formed on the first main surface of the second insulating film and having a second main surface and second side surfaces continuous with the second main surface, and a second coil formed on the second main surface of the third insulating film. The second insulating film and the third insulating film are formed as a laminated insulating film together. A thickness of the second coil is greater than a thickness of the first coil in a thickness direction of the semiconductor substrate.
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公开(公告)号：US10128125B2
公开(公告)日：2018-11-13
申请号：US15789740
申请日：2017-10-20
Applicant: Renesas Electronics Corporation
Inventor： Takuo Funaya , Takayuki Igarashi
IPC: H01L29/00 , H01L21/3205 , H01L23/522 , H01L23/00 , H01L27/06 , H01L21/66 , H01L49/02 , H01L21/02 , H01L23/528 , H01L23/495
Abstract: A semiconductor device including: a semiconductor substrate; a first coil formed on the semiconductor substrate via a first insulation film; a second insulation film formed on the semiconductor substrate so as to cover the first insulation film and the first coil; a first pad formed on the second insulation film and disposed at a position not overlapped with the first coil in a planar view; a laminated insulation film formed on the second insulation film, the laminated insulation film having a first opening from which the first pad is exposed; a second coil formed on the laminated insulation film and disposed above the first coil; and a first wiring formed on the laminated insulation film including an upper portion of the first pad exposed from the first opening, the first wiring being electrically connected to the first pad.
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公开(公告)号：US09711451B2
公开(公告)日：2017-07-18
申请号：US14418116
申请日：2014-01-29
Applicant: Renesas Electronics Corporation
Inventor： Takayuki Igarashi , Takuo Funaya
IPC: H01L27/08 , H01L23/522 , H01L27/06 , H01L27/12 , H01L23/00 , H01L23/495 , H01L23/528 , H01L23/532 , H01L25/16
CPC classification number: H01L23/5227 , H01L23/49503 , H01L23/49541 , H01L23/49575 , H01L23/5283 , H01L23/53214 , H01L23/53223 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/167 , H01L27/0688 , H01L27/1203 , H01L2224/02166 , H01L2224/05554 , H01L2224/45124 , H01L2224/48137 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2924/13055 , H01L2924/00 , H01L2924/00014
Abstract: Characteristics of a semiconductor device are improved. A semiconductor device includes a coil CL1 and a wiring M2 formed on an interlayer insulator IL2, a wiring M3 formed on an interlayer insulator IL3, and a coil CL2 and a wiring M4 formed on the interlayer insulator IL4. Moreover, a distance DM4 between the coil CL2 and the wiring M4 is longer than a distance DM3 between the coil CL2 and the wiring M3 (DM4>DM3). Furthermore, the distance DM3 between the coil CL2 and the wiring M3 is set to be longer than a sum of a film thickness of the interlayer insulator IL3 and a film thickness of the interlayer insulator IL4, which are positioned between the coil CL1 and the coil CL2. In this manner, it is possible to improve an insulation withstand voltage between the coil CL2 and the wiring M4 or the like, where a high voltage difference tend to occur. Moreover, a transformer formation region 1A and a seal ring formation region 1C surrounding a peripheral circuit formation region 1B are formed so as to improve the moisture resistance.
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