公开(公告)号：US4101924A

公开(公告)日：1978-07-18

申请号：US807080

申请日：1977-06-16

申请人： Dale M. Brown ,  Marvin Garfinkel

发明人： Dale M. Brown ,  Marvin Garfinkel

IPC分类号： G01T1/20 ,  H01L31/0232 ,  H01L31/113 ,  H01L27/14 ,  G01T1/22

CPC分类号： G01T1/2018 ,  H01L31/02322 ,  H01L31/113

摘要： A structure is described in which a large area depletion region is provided in a semiconductor substrate of one conductivity type for the conversion of photons into charge and in which a small area region of opposite conductivity type is provided in the substrate for read out of the collected charge.

公开(公告)号：US4012767A

公开(公告)日：1977-03-15

申请号：US661092

申请日：1976-02-25

申请人： Dale M. Brown ,  Marvin Garfinkel ,  Mario Ghezzo

发明人： Dale M. Brown ,  Marvin Garfinkel ,  Mario Ghezzo

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L31/02 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54 ,  H01L29/62

CPC分类号： H01L31/02005 ,  H01L23/522 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/3011

摘要： In a semiconductor device low impedance ohmic connection is provided between a first conductor constituted of a metallic oxide material and a second conductor constituted of aluminum by the inclusion between the two conductors of a conductive interface member making low impedance ohmic contact to each of the first and second conductors.

摘要翻译： 在半导体器件中，在由金属氧化物材料构成的第一导体和由铝构成的第二导体之间通过导电接口构件的两个导体之间的夹入而提供低阻抗欧姆连接，从而对第一和第 第二导体。

公开(公告)号：US06784430B2

公开(公告)日：2004-08-31

申请号：US10277940

申请日：2002-10-23

申请人： Kevin S. Matocha ,  Jeffrey B. Fedison ,  James W. Kretchmer ,  Dale M. Brown ,  Peter M. Sandvik

发明人： Kevin S. Matocha ,  Jeffrey B. Fedison ,  James W. Kretchmer ,  Dale M. Brown ,  Peter M. Sandvik

IPC分类号： H01L2714

CPC分类号： G01J5/0014 ,  G01J1/0488 ,  G01J1/42 ,  G01J5/602 ,  H04M3/382 ,  H04M3/42314 ,  H04M3/4234

摘要： A flame sensor for combustion flame temperature determination comprises elongated extensions that are positioned with parallel interdigitated longitudinal axis with respect to one another. An optical spectrometer comprises the sensor and a system comprises the sensor. A method for combustion flame temperature determination comprises obtaining a first photodiode signal and a second photodiode signal by using photodiode devices comprising photodiodes with elongated extending interdigitated digits. A method of fabricating a flame sensor for combustion flame temperature determination, comprises forming first and second photodiodes with elongated extending interdigitated digits.

摘要翻译： 用于燃烧火焰温度测定的火焰传感器包括细长延伸部，其相对于彼此以平行的叉指纵轴线定位。 光谱仪包括传感器，系统包括传感器。 一种用于燃烧火焰温度测定的方法包括通过使用包括具有细长延伸的叉指位的光电二极管的光电二极管器件来获得第一光电二极管信号和第二光电二极管信号。 一种制造用于燃烧火焰温度测定的火焰传感器的方法，包括：形成第一和第二光电二极管，其具有细长延伸的叉指位数。

公开(公告)号：US06768326B2

公开(公告)日：2004-07-27

申请号：US09682636

申请日：2001-10-01

申请人： Dale M. Brown ,  Donald T. McGrath ,  Charles David Greskovich ,  Robert Joseph Lyons

发明人： Dale M. Brown ,  Donald T. McGrath ,  Charles David Greskovich ,  Robert Joseph Lyons

IPC分类号： G01R31302

CPC分类号： G01T1/2018

摘要： A radiation detector includes: a scintillator which produces UV photons in response to receiving radiation from a radiation producing source; and, a wide bandgap semiconductor device sensitive to the UV photons produced by the scintillator. The semiconductor device produces an electric signal as a function of the amount of UV photons incident thereon. Preferably, the electric signal is then measure, recorded and/or otherwise analyzed.

摘要翻译： 辐射检测器包括：闪烁体，其响应于接收来自辐射产生源的辐射而产生UV光子; 以及对由闪烁体产生的UV光子敏感的宽带隙半导体器件。 半导体器件产生作为入射在其上的UV光子的量的函数的电信号。 优选地，然后测量，记录和/或以其他方式分析电信号。

公开(公告)号：US5467185A

公开(公告)日：1995-11-14

申请号：US276123

申请日：1994-07-15

申请人： William E. Engeler ,  Dale M. Brown

发明人： William E. Engeler ,  Dale M. Brown

IPC分类号： G01J5/00 ,  F02D35/02 ,  F02D41/14 ,  F02D45/00 ,  G01M15/04 ,  G01M15/10 ,  G01M15/00 ,  F02P5/145

CPC分类号： F02D35/022 ,  F02D35/025 ,  F02D41/008 ,  F02D41/1451 ,  G01M15/048 ,  G01M15/10

摘要： Respective SiC (silicon carbide) photodiode sensors are used to measure flame temperature at each cylinder of an internal combustion engine, and information generated by the SiC photodiode sensors is used to control the fuel injection in a feedback loop to control individual cylinder flame temperature and combustion.

摘要翻译： 使用各种SiC（碳化硅）光电二极管传感器来测量内燃机的每个气缸的火焰温度，并且使用由SiC光电二极管传感器产生的信息来控制反馈环路中的燃料喷射以控制单个气缸火焰温度和燃烧 。

公开(公告)号：US06838741B2

公开(公告)日：2005-01-04

申请号：US10314986

申请日：2002-12-10

申请人： Peter M. Sandvik ,  Dale M. Brown ,  Stephen D. Arthur ,  Kevin S. Matocha ,  James W. Kretchmer

发明人： Peter M. Sandvik ,  Dale M. Brown ,  Stephen D. Arthur ,  Kevin S. Matocha ,  James W. Kretchmer

IPC分类号： G01J1/02 ,  H01J20060101 ,  H01L31/0232 ,  H01L31/0248 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/06 ,  H01L31/062 ,  H01L31/107 ,  H01L31/113 ,  H01L31/115

CPC分类号： H01L31/02322 ,  H01L31/02161 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/115

摘要： An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.

摘要翻译： 本发明的一个方面涉及一种雪崩光电二极管（APD）装置，用于在冲击水平接近250重力加速度（G）和/或温度接近或超过150°的恶劣的井下环境中的油井钻井应用 C.本发明的另一方面涉及使用SiC材料制造的APD器件。 本发明的另一方面涉及使用GaN材料制造的APD器件。 根据本发明的实施例，用于检测紫外光子的雪崩光电二极管包括具有第一掺杂剂的衬底; 具有第一掺杂剂的第一层，位于衬底的顶部; 具有位于所述第一层的顶部上的具有第二掺杂剂的第二层; 具有第二掺杂剂的第三层，位于所述第二层的顶部; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第三层的顶部; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第三层之上; 其中所述雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁; 并且其中所述雪崩光电二极管在包括大约等于150摄氏度的温度的环境中操作。

公开(公告)号：US5480298A

公开(公告)日：1996-01-02

申请号：US332190

申请日：1994-10-31

申请人： Dale M. Brown

发明人： Dale M. Brown

IPC分类号： F01D21/00 ,  F23N1/02 ,  F23N5/00 ,  F23N5/08

CPC分类号： G01J5/0014 ,  F01D21/003 ,  F23N5/003 ,  F23N5/082 ,  F23N1/02 ,  F23N2041/20 ,  Y02T50/677

摘要： Combustion in a boiler burner is controlled through use of flame spectroscopy in order to achieve low NO.sub.x emissions in the exhaust. By monitoring the combustion flame in the boiler burner to determine intensity of ultraviolet spectral lines, and dynamically adjusting the fuel/air ratio of the fuel mixture such that this intensity remains below a predetermined level associated with a desired low level of NO.sub.x emissions, the boiler burner produces significantly reduced NO.sub.x emissions in its exhaust but at a sufficiently high combustion flame temperature to avoid any undue risk of flame-out, thereby assuring stable, safe and reliable operation.

摘要翻译： 通过使用火焰光谱仪来控制锅炉燃烧器中的燃烧，以实现排气中的低NOx排放。 通过监测锅炉燃烧器中的燃烧火焰以确定紫外光谱线的强度，并且动态地调节燃料混合物的燃料/空气比，使得该强度保持低于与期望的低水平的NOx排放相关联的预定水平，锅炉 燃烧器在其排气中产生显着减少的NOx排放，但是在足够高的燃烧火焰温度下，以避免任何不适当的熄火风险，从而确保稳定，安全和可靠的操作。

公开(公告)号：US5394005A

公开(公告)日：1995-02-28

申请号：US198679

申请日：1994-02-18

申请人： Dale M. Brown ,  John A. Edmond

发明人： Dale M. Brown ,  John A. Edmond

IPC分类号： H01L31/0352 ,  H01L31/103 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/035281 ,  H01L31/103 ,  Y02E10/50

摘要： A silicon carbide photodiode exhibiting high short-wavelength sensitivity, particularly in the ultraviolet spectrum, and very low reverse leakage current includes a p type conductivity 6H crystalline substrate. A first p- silicon carbide crystalline layer is epitaxially grown on the body. A second n+ silicon carbide crystalline layer is epitaxially grown on the first layer and forms a p-/n+ junction with the first layer. A metallic upper contact layer is formed on a predetermined surface region of the second layer oppositely situated from the junction. The second layer is of a uniform minimum thickness, generally less than 1000 Angstroms, with a greater thickness, typically 3000-4000 Angstroms, beneath the predetermined surface region. The thicker portion of the second layer occupies less than 10% and generally less than 1% of the total second layer surface area. Hence optical sensitivity of the photodiode is essentially determined by the thinner portion of the second layer, while the thicker portion of this layer is made sufficiently large to prevent diffusion of upper contact layer metal into the vicinity of the junction during contact sintering or alloying operations.

摘要翻译： 具有高短波长灵敏度，特别是紫外光谱的碳化硅光电二极管和非常低的反向漏电流包括p型导电6H晶体衬底。 在体上外延生长第一p-碳化硅结晶层。 在第一层上外延生长第二n +碳化硅晶体层，并与第一层形成p- / n +结。 金属上接触层形成在与接合部相对的第二层的预定表面区域上。 第二层具有通常小于1000埃的均匀最小厚度，在预定表面区域下方具有更大的厚度，通常为3000-4000埃。 第二层的较厚部分占总第二层表面积的10％以下，通常小于1％。 因此，光电二极管的光学灵敏度基本上由第二层的较薄部分确定，而该层的较厚部分被制成足够大，以防止在接触烧结或合金化操作期间上接触层金属扩散到接合部附近。

公开(公告)号：US4895780A

公开(公告)日：1990-01-23

申请号：US265285

申请日：1988-10-25

申请人： Yoav Nissan-Cohen ,  Paul A. Frank ,  Joseph M. Pimbley ,  Dale M. Brown ,  Ernest W. Balch ,  Kenneth J. Polasko

发明人： Yoav Nissan-Cohen ,  Paul A. Frank ,  Joseph M. Pimbley ,  Dale M. Brown ,  Ernest W. Balch ,  Kenneth J. Polasko

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： In order to solve the problem of the proximity effects which occurs in the fabrication of integrated circuit devices, a facile method is provided for automatically creating a new pattern in which variably spaced windage correction is applied over the mask. This permits the utilization of conventional design fabrication rules and systems without the concomitant problem of producing small feature sizes in isolated structures. The method produces highly desirable chip masks and is readily implemented on commercially available CAD systems presently being employed for the production of circuit masks. The method is automatic and extremely easily implemented.

摘要翻译： 为了解决在集成电路器件的制造中发生的邻近效应的问题，提供了一种简单的方法，用于自动创建其中在掩模上施加可变地间隔的风向校正的新图案。 这允许利用传统的设计制造规则和系统，而没有在隔离结构中产生小特征尺寸的伴随问题。 该方法产生高度期望的芯片掩模，并且容易地在目前用于生产电路掩模的市售CAD系统上实现。 该方法是自动的，非常容易实现。

公开(公告)号：US4845050A

公开(公告)日：1989-07-04

申请号：US121183

申请日：1987-11-16

申请人： Manjin J. Kim ,  Dale M. Brown ,  Simon S. Cohen ,  Bernard Gorowitz ,  Richard J. Saia

发明人： Manjin J. Kim ,  Dale M. Brown ,  Simon S. Cohen ,  Bernard Gorowitz ,  Richard J. Saia

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28512 ,  H01L21/76879 ,  Y10S148/003

摘要： A conductive member consisting of a first conductor of an alloy of titanium and tungsten and a second conductor of a refractory metal such as molybdenum is sintered to a conductive member of silicon to a temperature in the range of 600.degree. C. to 650.degree. C. in a reducing atmosphere to form a low resistance contact.

摘要翻译： 将由钛和钨的合金的第一导体和诸如钼的难熔金属的第二导体组成的导电构件烧结到硅的导电构件至600℃至650℃的温度。 在还原气氛中形成低电阻接触。