公开(公告)号：US5066552A

公开(公告)日：1991-11-19

申请号：US394784

申请日：1989-08-16

申请人： James K. Howard ,  Randall G. Simmons ,  Tadashi Yogi

发明人： James K. Howard ,  Randall G. Simmons ,  Tadashi Yogi

IPC分类号： C23C14/14 ,  G11B5/64 ,  G11B5/65 ,  G11B5/66 ,  G11B5/73 ,  G11B5/738 ,  G11B5/85 ,  G11B5/851 ,  H01F10/16 ,  H01F41/18

CPC分类号： G11B5/656 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/1266 ,  Y10T428/12931

摘要： An improved CoPt alloy magnetic recording disk for horizontal recording has a magnetic recording layer which includes oxygen, the oxygen being present preferably in the range of approximately 5 to 30 atomic percent. The resulting disk structure has substantially decreased intrinsic media noise at high linear recording density.

公开(公告)号：US5062938A

公开(公告)日：1991-11-05

申请号：US464842

申请日：1990-01-16

申请人： James K. Howard

发明人： James K. Howard

IPC分类号： C23C14/08 ,  G11B5/64 ,  G11B5/66 ,  G11B5/72 ,  G11B5/73 ,  G11B5/85 ,  G11B5/851

CPC分类号： G11B5/7325 ,  G11B5/656 ,  G11B5/72 ,  G11B5/851 ,  Y10S428/90 ,  Y10T428/12931

摘要： A cobalt alloy disk for horizontal magnetic recording has both high coercivity and low noise at high recording density. The magnetic layer in the disk contains, in addition to the cobalt alloy material, an oxide of one or more "impurity" elements which have both a relatively low solubility in cobalt and a high affinity for oxygen. Such elements include yttrium (Y), silicon (Si), the rare earth elements, hafnium (Hf), germanium (Ge), tin (Sn) and zirconium (Zr). The disk may be formed by co-sputtering the cobalt alloy material and the impurity element(s), and thereafter oxidizing the impurity element(s). The oxidation may occur by heating the disk while the magnetic layer is exposed to oxygen or air, or by exposure of the magnetic layer to an argon-oxygen plasma.

公开(公告)号：US4940511A

公开(公告)日：1990-07-10

申请号：US355239

申请日：1989-05-22

申请人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

发明人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer layer.

摘要翻译： 磁阻（MR）读取换能器包括由铁磁材料形成的薄膜MR层和与MR层接触的非磁性薄膜间隔层。 间隔层包括选自镍铬合金和镍铬合金与铬氧化物的材料。 沉积与间隔层接触的软磁性材料的薄膜，使得在MR层的至少一部分中产生横向偏压。 本发明的一个特征是间隔层的电阻率可以通过选择间隔层中的镍铬合金与氧化铬的比例来选择。 在具体实施例中，间隔层仅在MR层的中心区域上延伸。 在MR层是镍基合金的情况下，可以使用使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿化学蚀刻工艺来对间隔层进行图案化。

公开(公告)号：US4755897A

公开(公告)日：1988-07-05

申请号：US43675

申请日：1987-04-28

申请人： James K. Howard

发明人： James K. Howard

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  G11B5/12 ,  G11B5/30

CPC分类号： G11B5/399

摘要： An improved thin film magnetoresistive (MR) sensor uses an alloy comprising Fe, Mn and Cr as an antiferromagnetic layer to provide a longitudinal exchange bias in the ferromagnetic MR layer. Sufficient exchange biasing is provided and the FeMnCr layer exhibits excellent corrosion resistance.

公开(公告)号：US4632883A

公开(公告)日：1986-12-30

申请号：US725977

申请日：1985-04-22

申请人： James K. Howard ,  Mohammad T. Moshref

发明人： James K. Howard ,  Mohammad T. Moshref

IPC分类号： G11B5/66 ,  G11B5/64 ,  G11B5/708 ,  G11B5/73 ,  G11B5/738 ,  H01F10/30

CPC分类号： G11B5/64 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12806 ,  Y10T428/12847 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12944 ,  Y10T428/12951

摘要： A thin film alloy disk for vertical magnetic recording has a cobalt-chromium-tantalum (CoCrTa) magnetic layer with perpendicular magnetic anisotropy deposited on an underlayer of beta-tantalum (.beta.-Ta). The .beta.-Ta layer is deposited on a suitable substrate, such as silicon, which is compatible with the formation of the beta phase of tantalum. The highly preferred orientation of the .beta.-Ta film on the substrate and the incorporation of Ta in the magnetic film results in the magnetic film having improved perpendicular magnetic anisotropy, high perpendicular coercivity and low horizontal coercivity. A nickel-iron (NiFe) layer may be deposited between the substrate and the .beta.-Ta underlayer to provide a magnetic flux return path.

摘要翻译： 用于垂直磁记录的薄膜合金盘具有垂直磁各向异性的钴 - 铬 - 钽（CoCrTa）磁性层沉积在β-钽（β-Ta）的底层上。 β-Ta层沉积在合适的衬底上，例如硅，其与钽的β相的形成相容。 在基板上的β-Ta膜的高度优选取向和在磁膜中掺入Ta导致具有改善的垂直磁各向异性，高垂直矫顽力和低水平矫顽力的磁膜。 镍 - 铁（NiFe）层可以沉积在衬底和β-Ta底层之间以提供磁通返回路径。

公开(公告)号：US4488262A

公开(公告)日：1984-12-11

申请号：US389204

申请日：1982-06-17

申请人： Dominique Basire ,  Arup Bhattacharyya ,  James K. Howard ,  Pierre Mollier

发明人： Dominique Basire ,  Arup Bhattacharyya ,  James K. Howard ,  Pierre Mollier

IPC分类号： G11C17/00 ,  G11C17/08 ,  G11C17/16 ,  H01L23/525 ,  G11C11/40

CPC分类号： G11C17/16 ,  H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011

摘要： An electrically programmable read only memory assembly having cells arranged at the intersections of bit lines (BL1) and word lines (WL1, WL2), wherein each cell is formed of a bipolar transistor provided with a base region (70) and an emitter region (71) covered with a dielectric layer (2) made of an oxide or titanate of a transition metal. The cell in this condition represents a binary 0 information bit. The application of an appropriate voltage of approximately 4 volts to the pads of this cell through its corresponding bit line (BL1) and word line (WL2) causes the dielectric layer to break down and places the bit line in ohmic contact with the emitter, which sets the cell in its second condition representing a binary "1" information bit.

摘要翻译： 一种电可编程只读存储器组件，其具有布置在位线（BL1）和字线（WL1，WL2）的交点处的单元，其中每个单元由双极晶体管形成，该双极晶体管具有基极区域（70）和发射极区域 71）覆盖有由过渡金属的氧化物或钛酸盐制成的电介质层（2）。 该条件下的单元表示二进制0信息位。 通过其对应的位线（BL1）和字线（WL2）向该单元的焊盘施加大约4伏特的适当电压，导致电介质层破裂并将位线与发射极欧姆接触， 将单元设置为表示二进制“1”信息位的第二条件。

公开(公告)号：US5436047A

公开(公告)日：1995-07-25

申请号：US138934

申请日：1993-10-15

申请人： James K. Howard ,  Hung-Chang W. Huang ,  Cherngye Hwang ,  Anthony W. Wu

发明人： James K. Howard ,  Hung-Chang W. Huang ,  Cherngye Hwang ,  Anthony W. Wu

IPC分类号： G11B5/66 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B5/85 ,  G11B5/851 ,  G11B5/00

CPC分类号： G11B5/7325 ,  G11B5/8404 ,  Y10S428/90 ,  Y10S428/938 ,  Y10T428/24355 ,  Y10T428/265

摘要： A magnetic recording disk has an improved surface film formed on the disk blank. A sputter-deposited surface coating containing nickel, chromium and oxygen (Ni--Cr--O) is formed on a AlMg disk blank, after which a cobalt alloy magnetic layer is formed over the Ni--Cr--O coating and a protective overcoat is formed over magnetic layer. The use of the Ni--Cr--O coating on the disk blank eliminates the need for a wet electroless deposition process for creation of a surface coating and results in an inherent texturing of the subsequently deposited magnetic film and protective overcoat which conform to the surface texture of the sputter-deposited Ni--Cr--O. The disks made with the Ni--Cr--O surface film exhibit a very low static friction force between the air-bearing slider and the disk surface when the disks are used in contact start/stop (CSS) disk files.

摘要翻译： 磁记录盘具有形成在盘坯上的改进的表面膜。 在AlMg盘坯上形成包含镍，铬和氧（Ni-Cr-O）的溅射沉积表面涂层，之后在Ni-Cr-O涂层上形成钴合金磁性层，形成保护外涂层 磁性层。 在盘坯上使用Ni-Cr-O涂层消除了对用于产生表面涂层的湿式无电沉积工艺的需要，并导致随后沉积的磁性膜和保护性外涂层的固有纹理，其符合表面纹理 的溅射沉积的Ni-Cr-O。 使用Ni-Cr-O表面薄膜制成的圆盘，当磁盘用于触点启动/停止（CSS）磁盘文件时，在空气滑动滑块和磁盘表面之间显示非常低的静摩擦力。

公开(公告)号：US4652499A

公开(公告)日：1987-03-24

申请号：US857020

申请日：1986-04-29

申请人： James K. Howard

发明人： James K. Howard

IPC分类号： G11B5/66 ,  C22C19/07 ,  G11B5/62 ,  G11B5/64 ,  G11B5/706 ,  G11B5/73 ,  G11B5/738 ,  H01F10/16 ,  H01F10/30 ,  B32B15/00

CPC分类号： G11B5/7325 ,  G11B5/64 ,  Y10S428/928 ,  Y10T428/12597 ,  Y10T428/12625 ,  Y10T428/12674 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12937 ,  Y10T428/12944

摘要： An improved cobalt-platinum (CoPt) thin film metal alloy media for horizontal magnetic recording has a squareness greater than prior CoPt thin film metal alloy media. An underlayer of a body-centered-cubic (BCC) chromium-based alloy with a lattice cell constant greater than chromium (Cr), such as chromium-vanadium (CrV), is formed between the substate and the CoPt magnetic layer. The underlayer also improves the magnetic properties of the media when the magnetic layer is an alloy of cobalt-platinum-chromium (CoPtCr).

摘要翻译： 用于水平磁记录的改进的钴 - 铂（CoPt）薄膜金属合金介质具有比先前的CoPt薄膜金属合金介质更大的矩形度。 在子状态和CoPt磁性层之间形成了具有大于铬（Cr）的晶格单元常数（例如铬 - 钒（CrV））的体心立方（BCC）铬基合金的底层。 当磁性层是钴 - 铂 - 铬（CoPtCr）合金时，底层也提高了介质的磁性能。

公开(公告)号：US4408254A

公开(公告)日：1983-10-04

申请号：US322360

申请日：1981-11-18

申请人： Wei-Kan Chu ,  James K. Howard

发明人： Wei-Kan Chu ,  James K. Howard

IPC分类号： C01G23/00 ,  C23C14/48 ,  H01B3/00 ,  H01G4/10 ,  H01G4/12 ,  H01G4/33 ,  H01G4/20

CPC分类号： H01G4/1218

摘要： A capacitor is formed by placing between two electodes a thin film of amorphous titanate which has been ion implanted with noble gas ions.

摘要翻译： 通过在两个电极之间放置已经用惰性气体离子离子注入的非晶钛酸盐薄膜来形成电容器。

公开(公告)号：US4307132A

公开(公告)日：1981-12-22

申请号：US92114

申请日：1979-11-07

申请人： Wei-Kan Chu ,  James K. Howard ,  James F. White

发明人： Wei-Kan Chu ,  James K. Howard ,  James F. White

IPC分类号： H01L21/285 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L24/11 ,  H01L21/28537 ,  H01L21/76841 ,  H01L23/53223 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01064 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/14 ,  H01L2924/19043

摘要： Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier.Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.

摘要翻译： 包含铝层和具有与铝相互作用的倾向的材料的薄膜结构由具有高氧化铝含量的铝的中间层分离。 中间层通过充当扩散阻挡层来防止所述相互作用。 优选实施例涉及包括钽底部的其他过渡金属或与硅衬底接触的金属硅化物的硅肖特基势垒触点的硅半导体金属化结构，具有高氧化铝含量的铝的中间层 和顶层铝。 中间层用作铝和金属，金属硅化物或硅之间的扩散阻挡层。 本发明的优选实施方案还包括形成这种结构的方法，优选包括：在蒸发装置中在高真空下沉积纯钽，在蒸发装置中用铝代替钽，并在水，空气或氧气中渗出以形成氧化铝 - 丰富的中间铝层，然后返回高真空沉积纯铝。 本发明也适用于需要铝的扩散阻挡层的FET或CCD结构。