公开(公告)号：US4333808A

公开(公告)日：1982-06-08

申请号：US234084

申请日：1981-02-13

申请人： Arup Bhattacharyya ,  Wei-Kan Chu ,  James K. Howard ,  Francis W. Wiedman

发明人： Arup Bhattacharyya ,  Wei-Kan Chu ,  James K. Howard ,  Francis W. Wiedman

IPC分类号： C23C14/48 ,  H01G4/10 ,  C23C15/00

CPC分类号： H01G4/10 ,  C23C14/48

摘要： A suitable substrate is provided to which is applied a metal electrically conductive film electrode. The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal electrode with O+ or N+ ions. Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed so as to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film to provide an ultra-thin dielectric film.

摘要翻译： 提供合适的衬底，向其施加金属导电膜电极。 然后将衬底和导电电极膜暴露于O +或N +离子的离子束注入，以用O +或N +离子浸渍金属电极的表面。 然后，将具有注入的O +或N +离子的基板和导电膜退火，以稳定已经注入到导电膜的表面中的氧化物结构，以提供超薄电介质膜。

公开(公告)号：US4206472A

公开(公告)日：1980-06-03

申请号：US864182

申请日：1977-12-27

申请人： Wei-Kan Chu ,  James K. Howard ,  James F. White

发明人： Wei-Kan Chu ,  James K. Howard ,  James F. White

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L21/768 ,  H01L23/532 ,  H01L29/47 ,  H01L29/872 ,  H01L23/48

CPC分类号： H01L29/47 ,  H01L21/28537 ,  H01L21/76841 ,  H01L23/53223 ,  H01L29/66848 ,  H01L2924/0002 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/0104 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/19043

摘要： Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier.Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.

摘要翻译： 包含铝层和具有与铝相互作用的倾向的材料的薄膜结构由具有高氧化铝含量的铝的中间层分离。 中间层通过充当扩散阻挡层来防止所述相互作用。 优选实施例涉及包括钽底部的其他过渡金属或与硅衬底接触的金属硅化物的硅肖特基势垒触点的硅半导体金属化结构，具有高氧化铝含量的铝的中间层 和顶层铝。 中间层用作铝和金属，金属硅化物或硅之间的扩散阻挡层。 本发明的优选实施方案还包括形成这种结构的方法，优选包括：在蒸发装置中在高真空下沉积纯钽，在蒸发装置中用铝代替钽，并在水，空气或氧气中渗出以形成氧化铝 - 丰富的中间铝层，然后返回高真空沉积纯铝。 本发明也适用于需要铝的扩散阻挡层的FET或CCD结构。

公开(公告)号：US4408254A

公开(公告)日：1983-10-04

申请号：US322360

申请日：1981-11-18

申请人： Wei-Kan Chu ,  James K. Howard

发明人： Wei-Kan Chu ,  James K. Howard

IPC分类号： C01G23/00 ,  C23C14/48 ,  H01B3/00 ,  H01G4/10 ,  H01G4/12 ,  H01G4/33 ,  H01G4/20

CPC分类号： H01G4/1218

摘要： A capacitor is formed by placing between two electodes a thin film of amorphous titanate which has been ion implanted with noble gas ions.

摘要翻译： 通过在两个电极之间放置已经用惰性气体离子离子注入的非晶钛酸盐薄膜来形成电容器。

公开(公告)号：US4307132A

公开(公告)日：1981-12-22

申请号：US92114

申请日：1979-11-07

申请人： Wei-Kan Chu ,  James K. Howard ,  James F. White

发明人： Wei-Kan Chu ,  James K. Howard ,  James F. White

IPC分类号： H01L21/285 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L24/11 ,  H01L21/28537 ,  H01L21/76841 ,  H01L23/53223 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01064 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/14 ,  H01L2924/19043

摘要： Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier.Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.

摘要翻译： 包含铝层和具有与铝相互作用的倾向的材料的薄膜结构由具有高氧化铝含量的铝的中间层分离。 中间层通过充当扩散阻挡层来防止所述相互作用。 优选实施例涉及包括钽底部的其他过渡金属或与硅衬底接触的金属硅化物的硅肖特基势垒触点的硅半导体金属化结构，具有高氧化铝含量的铝的中间层 和顶层铝。 中间层用作铝和金属，金属硅化物或硅之间的扩散阻挡层。 本发明的优选实施方案还包括形成这种结构的方法，优选包括：在蒸发装置中在高真空下沉积纯钽，在蒸发装置中用铝代替钽，并在水，空气或氧气中渗出以形成氧化铝 - 丰富的中间铝层，然后返回高真空沉积纯铝。 本发明也适用于需要铝的扩散阻挡层的FET或CCD结构。

公开(公告)号：US09326687B2

公开(公告)日：2016-05-03

申请号：US13958744

申请日：2013-08-05

申请人： Wei-Kan Chu ,  Dharshana N Wijesundera ,  Indrajith Rajapaksa

发明人： Wei-Kan Chu ,  Dharshana N Wijesundera ,  Indrajith Rajapaksa

IPC分类号： A61B5/00 ,  G01N21/65

CPC分类号： A61B5/0075 ,  A61B1/00172 ,  A61B1/07 ,  A61B2562/12 ,  C23C14/48 ,  G01N21/658

摘要： Methods for fabricating metal nano-particle embedded enhancement substrates used for surface enhanced Raman spectroscopy (SERS) including ion implanting metal nano-particles into the substrate and etching the substrate to partially expose the metal nano-particles. The resulting material is useful as a SERS substrate for detection of molecules adsorbed on it by surface enhanced Raman spectroscopy.

摘要翻译： 用于制造用于表面增强拉曼光谱（SERS）的金属纳米颗粒嵌入增强基板的方法，包括将离子注入金属纳米颗粒到基板中并蚀刻基板以部分地暴露金属纳米颗粒。 所得材料可用作通过表面增强拉曼光谱法检测吸附在其上的分子的SERS底物。

公开(公告)号：US06812523B1

公开(公告)日：2004-11-02

申请号：US10237417

申请日：2002-09-09

申请人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

发明人： Wei-Kan Chu ,  Lin Shao ,  Xinming Lu ,  Jiarui Liu ,  Xuemei Wang

IPC分类号： H01L2976

CPC分类号： H01L21/2254 ,  H01L21/2257 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/34

摘要： Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

摘要翻译： 在半导体晶片的表面附近引入空位和掺杂离子。 通过间隙机制扩散的掺杂​​离子具有大大降低的扩散率，这导致非常低的电阻率掺杂区域和非常浅的结。

公开(公告)号：US20100252805A1

公开(公告)日：2010-10-07

申请号：US11993677

申请日：2006-06-29

申请人： Wei-Kan Chu ,  Hye-Won Seo ,  Quark Y. Chen ,  Li-Wei Tu ,  Ching-Lien Hsaio ,  Xuemei Wang ,  Yen-Jie Tu

发明人： Wei-Kan Chu ,  Hye-Won Seo ,  Quark Y. Chen ,  Li-Wei Tu ,  Ching-Lien Hsaio ,  Xuemei Wang ,  Yen-Jie Tu

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： C30B29/40 ,  B82Y10/00 ,  B82Y30/00 ,  C30B23/007 ,  C30B23/025 ,  C30B23/04 ,  C30B29/62 ,  C30B31/22 ,  H01L21/0237 ,  H01L21/02538 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02658 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676

摘要： A method of preparing nanorod arrays using ion beam implantation is described that includes defining a pattern on a substrate and then implanting ions into the substrate using ion beam implantation. Next, a thin film is deposited on the substrate. During film growth, nanotrenches form and catalyze the formation of nanorods through capillary condensation. The resulting nanorods are aligned with the supporting matrix and are free from lattice and thermal strain effect. The density, size, and aspect ratios of the nanorods can be varied by changing the ion beam implantation and thin film growth conditions resulting in control of emission efficiency.

摘要翻译： 描述了使用离子束注入制备纳米棒阵列的方法，其包括在衬底上限定图案，然后使用离子束注入将离子注入到衬底中。 接下来，在基板上沉积薄膜。 在膜生长期间，纳米管通过毛细管凝结形成和催化纳米棒的形成。 所得的纳米棒与支撑基体对准，并且没有晶格和热应变效应。 纳米棒的密度，尺寸和长宽比可以通过改变离子束注入和薄膜生长条件来改变，从而控制发射效率。

公开(公告)号：US20050260836A1

公开(公告)日：2005-11-24

申请号：US10523127

申请日：2003-07-17

申请人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

发明人： Wei-Kan Chu ,  Lin Shao ,  Jiarui Liu

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/425

CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/324

摘要： A method of forming a stable unction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.

摘要翻译： 在衬底上具有硅表面层的半导体晶片上的微电子结构上形成稳定的电荷的方法包括以下步骤：将掺杂剂离子注入到表面层中; 清洁和氧化表面层，并对晶片进行两次退火，以回收由低能离子注入产生的表面层损坏的硅晶体结构。 第一退火工艺使用800℃至1200℃的温度范围，持续时间约为几分之一秒至小于约1000秒，斜坡上升速率为约50℃/秒至 约1000℃/秒。 第二退火方法使用400℃至650℃的温度范围约1秒至约10小时，更优选约60秒至约1小时。 退火过程都包括冷却过程。

公开(公告)号：US5726512A

公开(公告)日：1998-03-10

申请号：US726147

申请日：1996-10-04

申请人： Wei-Kan Chu ,  Quark Yung-Sung Chen ,  Ki-Bui Ma ,  Mark Alan Lamb ,  Chase Kenyon McMichael ,  Ignatius S. T. Tsong

发明人： Wei-Kan Chu ,  Quark Yung-Sung Chen ,  Ki-Bui Ma ,  Mark Alan Lamb ,  Chase Kenyon McMichael ,  Ignatius S. T. Tsong

IPC分类号： F16C39/06 ,  F16F15/03 ,  H02N15/04 ,  B60L13/04 ,  H02K7/09

CPC分类号： F16C32/0438 ,  F16F15/03 ,  H02N15/04 ,  Y10S505/876 ,  Y10S505/878

摘要： An isolation system for isolating a first object from vibrations from a second object. Such vibrations will have three orthogonal components, one oriented along a line between the objects, and two oriented 90.degree. apart in a plane normal to that line. The system includes three superconductor/magnet stages, each stage designed to extinguish one of the orthogonal components.

摘要翻译： 用于将第一物体与第二物体的振动隔离的隔离系统。 这种振动将具有三个正交分量，一个沿着物体之间的一个定向，两个定向在与该线垂直的平面中90°分开。 该系统包括三个超导体/磁体级，每个阶段被设计为熄灭其中一个正交分量。

公开(公告)号：US20100301196A1

公开(公告)日：2010-12-02

申请号：US12598269

申请日：2008-05-02

申请人： Wei-Kan Chu ,  Jia-Rui Liu

发明人： Wei-Kan Chu ,  Jia-Rui Liu

IPC分类号： H05H3/06 ,  H01J27/26 ,  G01T3/00 ,  G01N23/222

CPC分类号： H01J27/26 ,  G01N2223/0745 ,  G01N2223/626 ,  G01V5/0091

摘要： A portable and/or mobile detector for highly enriched uranium (HEU) and weapon grade plutonium (WGPu) is disclosed the detects HEU and/or WGPu based on neutron induced fission of a portion of the HEU and/or WGPu and detecting delayed neutron and/or γ-rays emission from delayed neutron emitters formed from the induced fission reactions.

摘要翻译： 公开了一种用于高浓缩铀（HEU）和武器级钚（WGPu）的便携式和/或移动式探测器，其基于一部分HEU和/或WGPu的中子诱导的裂变检测HEU和/或WGPu，并检测延迟的中子和 /或从诱导的裂变反应形成的延迟中子发射体的γ射线发射。