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    Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
    12.
    发明授权
    Photoacid generator, photoresist, coated substrate, and method of forming an electronic device 有权
    光酸发生剂，光致抗蚀剂，被覆基材和形成电子器件的方法

    公开(公告)号：US09067909B2

    公开(公告)日：2015-06-30

    申请号：US14012577

    申请日：2013-08-28

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder Kaur ,  Emad Aqad ,  Cong Liu ,  Cheng Bai Xu

    IPC: G03F7/004 ,  G03F7/20 ,  C07D319/04 ,  C07D317/72

    CPC classification number: C07D317/72 ,  C07D319/04 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2002

    Abstract: A photoacid generator compound has formula (1) wherein n is zero or 1; and R1-R6 are each independently hydrogen, halogen, or unsubstituted or substituted C1-20 linear or branched alkyl, C1-20 cycloalkyl, C6-20 aryl, C3-20 heteroaryl, or an acid-generating group having the structure *L-Z−M+] wherein L is an unsubstituted or substituted C1-50 divalent group; Z− is a monovalent anionic group; and M+ is an iodonium or sulfonium cation. Geminal R groups can combine to form a ring with the carbon to which they are attached, as long as no more than two such rings are formed. At least one of R1-R6 includes the acid-generating group or two germinal R groups combine to form the acid-generating group. Also described are a photoresist composition incorporating the photoacid generator compound, a coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using a layer of the photoresist composition.

    Abstract translation: 光酸产生剂化合物具有式（1），其中n为0或1; 和R 1 -R 6各自独立地为氢，卤素或未取代或取代的C 1-20直链或支链烷基，C 1-20环烷基，C 6-20芳基，C 3-20杂芳基或具有结构* LZ- M +]其中L是未取代或取代的C 1-50二价基团; Z-是一价阴离子基团; 而M +是碘鎓或锍阳离子。 只要不超过两个这样的环形成，Geminal R基团可以结合形成与它们所连接的碳的环。 R1-R6中的至少一个包括产酸基团或两个生发R基团结合形成产酸基团。 还描述了包含光致酸产生剂化合物的光致抗蚀剂组合物，包括光致抗蚀剂组合物层的涂布基材，以及使用光致抗蚀剂组合物层形成电子器件的方法。

    POLYMERS, PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS
    15.
    发明申请
    POLYMERS, PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS 审中-公开

    公开(公告)号：US20200377713A1

    公开(公告)日：2020-12-03

    申请号：US16885628

    申请日：2020-05-28

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Joshua Kaitz ,  Xisen Hou ,  Mingqi Li ,  Tomas Marangoni ,  Emad Aqad ,  Yang Song

    IPC: C08L33/24 ,  G03F7/004 ,  G03F7/20 ,  C08L33/06 ,  C08L33/14

    Abstract: Disclosed herein is a polymer comprising a first repeat unit and a second repeat unit, where the first repeat unit contains an acid labile group and where the second repeat unit has the structure of formula (1): wherein R1, R2 and R3 are each independently hydrogen, a halogen, a substituted or unsubstituted C1 to C12 alkyl group or C3 to C12 cycloalkyl group optionally containing an ether group, a carbonyl group, an ester group, a carbonate group, an amine group, an amide group, a urea group, a sulfate group, a sulfone group, a sulfoxide group, an N-oxide group, a sulfonate group, a sulfonamide group, or a combination thereof, a substituted or unsubstituted C6 to C14 aryl group, or C3 to C12 heteroaryl group, wherein the substitution is halogen, hydroxyl, cyano, nitro, C1 to C12 alkyl group, C1 to C12 haloalkyl group, C1 to C12 alkoxy group, C3 to C12 cycloalkyl group, amino, C2-C6 alkanoyl, carboxamido, a substituted or unsubstituted C6 to C14 aryl group, or C3 to C12 heteroaryl group; wherein R1 and R2 together optionally form a ring; and wherein n=1-3.

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