公开(公告)号：US08592318B2

公开(公告)日：2013-11-26

申请号：US12742073

申请日：2008-11-07

申请人： Jisoo Kim ,  Conan Chiang ,  Jun Shinagawa ,  S. M. Reza Sadjadi

发明人： Jisoo Kim ,  Conan Chiang ,  Jun Shinagawa ,  S. M. Reza Sadjadi

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01L21/31144 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31612 ,  H01L21/31654 ,  H01L21/32139

摘要： A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber.

摘要翻译： 提供了一种用于蚀刻设置在基板上方并且在抗反射涂层（ARC）层下方的蚀刻层和具有掩模特征的图案化有机掩模的方法。 将基板放置在处理室中。 ARC层打开。 形成氧化物间隔物沉积层。 部分去除有机掩模上的氧化物间隔物沉积层，其中氧化物间隔物沉积层的至少顶部被去除。 通过蚀刻除去有机掩模和ARC层。 通过氧化物隔离层沉积层的侧壁蚀刻蚀刻层。 将衬底从处理室中取出。

公开(公告)号：US08357434B1

公开(公告)日：2013-01-22

申请号：US11304223

申请日：2005-12-13

申请人： Dae-han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

发明人： Dae-han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

IPC分类号： H05H1/24

CPC分类号： H01L21/0338 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834

摘要： A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film.

摘要翻译： 公开了一种在等离子体处理系统的等离子体处理室中的基板上沉积保形膜的方法，该基板设置在卡盘上，该卡盘与冷却装置连接。 该方法包括在第一压力下将第一气体混合物流入等离子体处理室，其中第一气体混合物至少包括碳，并且其中第一气体混合物具有冷凝温度。 该方法还包括使用冷却装置将夹盘冷却至冷凝温度以下，从而允许至少一些第一气体混合物在基板的表面上冷凝。 该方法还包括从处理室排出第一气体混合物; 将第二气体混合物流入等离子体处理室，第二气体混合物的组成与第一气体混合物不同; 并冲击等离子体以形成保形膜。

公开(公告)号：US07785484B2

公开(公告)日：2010-08-31

申请号：US11841209

申请日：2007-08-20

申请人： Dongho Heo ,  Supriya Goyal ,  Jisoo Kim ,  S. M. Reza Sadjadi

发明人： Dongho Heo ,  Supriya Goyal ,  Jisoo Kim ,  S. M. Reza Sadjadi

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L21/0335 ,  H01L21/0334

摘要： A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and opening, and (c) etching the dielectric layer using the trimmed mask. The trimming and opening comprises a plurality of cycles, where each cycle includes (b1) a trim-etch phase which etches the ARL in a bottom of the mask features and selectively trims the isolated areas of the mask with respect to the dense areas, and (b2) a deposition-etch phase which deposits a deposition layer on the mask while further etching the ARL in the bottom of the mask features. The trimming and opening result in a net trimming of the mask in the isolated areas.

摘要翻译： 提供了一种用于蚀刻设置在抗反射层（ARL）下方的电介质层的方法。 该方法包括（a）在ARL上形成具有掩模特征的图案化掩模，掩模具有隔离区域和掩模特征的密集区域，（b）修剪和打开，以及（c）使用修剪的掩模蚀刻介电层。 修整和打开包括多个周期，其中每个周期包括（b1）修剪蚀刻阶段，其蚀刻掩模特征的底部中的ARL并相对于密集区域选择性地修整掩模的隔离区域，以及 （b2）沉积蚀刻阶段，其在掩模上沉积沉积层，同时进一步蚀刻掩模特征底部的ARL。 修剪和打开导致隔离区域中的面罩的净修整。

公开(公告)号：US07560388B2

公开(公告)日：2009-07-14

申请号：US11291303

申请日：2005-11-30

申请人： Jisoo Kim ,  Sangheon Lee ,  Daehan Choi ,  S. M. Reza Sadjadi

发明人： Jisoo Kim ,  Sangheon Lee ,  Daehan Choi ,  S. M. Reza Sadjadi

IPC分类号： H01L21/311

CPC分类号： H01L21/0338

摘要： A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.

摘要翻译： 提供了一种在电介质层中提供特征的方法。 在电介质层上形成牺牲层。 一组牺牲层特征被蚀刻到牺牲层中。 通过牺牲层将介电层特征的第一组蚀刻到介电层中。 第一组介电层特征和一组牺牲层特征用填充材料填充。 牺牲层被去除。 填充材料的各部分之间的间隙的宽度随收缩侧壁沉积而收缩。 通过收缩侧壁沉积将第二组介电层特征蚀刻到介电层中。 去除填充材料和收缩侧壁沉积。

公开(公告)号：US08533391B2

公开(公告)日：2013-09-10

申请号：US13365485

申请日：2012-02-03

申请人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

发明人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

IPC分类号： G06F12/00

CPC分类号： G06F3/0656 ,  G06F3/0616 ,  G06F3/0625 ,  G06F3/0679 ,  Y02D10/154

摘要： A storage device includes a host interface, a buffer memory, a storage medium, and a controller. The host interface is configured to receive storage data and an invalidation command, where the invalidation command is indicative of invalid data among the storage data received by the host interface. The buffer memory is configured to temporarily store the storage data received by the host interface. The controller is configured to execute a transcribe operation in which the storage data temporarily stored in the buffer memory is selectively stored in the storage medium. Further, the controller is responsive to receipt of the invalidation command to execute a logging process when a memory capacity of the invalid data indicated by the invalidation command is equal to or greater than a reference capacity.

摘要翻译： 存储装置包括主机接口，缓冲存储器，存储介质和控制器。 主机接口被配置为接收存储数据和无效命令，其中无效命令指示由主机接口接收的存储数据中的无效数据。 缓冲存储器被配置为临时存储由主机接口接收的存储数据。 控制器被配置为执行转录操作，其中临时存储在缓冲存储器中的存储数据被选择性地存储在存储介质中。 此外，当由无效命令指示的无效数据的存储器容量等于或大于参考容量时，控制器响应于接收到无效命令以执行记录处理。

公开(公告)号：US20110123020A1

公开(公告)日：2011-05-26

申请号：US12874799

申请日：2010-09-02

申请人： Hong-Mook Choi ,  Jisoo Kim ,  Xingguang Feng ,  Woo-Hyun Lee

发明人： Hong-Mook Choi ,  Jisoo Kim ,  Xingguang Feng ,  Woo-Hyun Lee

IPC分类号： H04L9/28

CPC分类号： H04L9/0637 ,  H04L2209/125 ,  H04L2209/20

摘要： An encryption/decryption method of an endecryptor including a plurality of endecryption units supporting an XES mode with tweak and ciphertext streaming (XTS) includes dividing an input data stream into consecutive data units; inputting the divided data units to the endecryption units, respectively; and simultaneously processing the input data units at the respective endecryption units. According to the encryption/decryption method, parallel processing is performed to encrypt/decrypt data at higher speed.

摘要翻译： 包括支持具有调整和密文流传输（XTS）的XES模式的多个边界处理单元的加密/解密方法包括：将输入数据流划分成连续的数据单元; 将分割的数据单元分别输入到内部加密单元; 并且在相应的内部加密单元处同时处理输入数据单元。 根据加密/解密方法，并行处理以较高的速度加密/解密数据。

公开(公告)号：US20110031214A1

公开(公告)日：2011-02-10

申请号：US12537179

申请日：2009-08-06

申请人： Jisoo Kim ,  Thorsten B. Lill

发明人： Jisoo Kim ,  Thorsten B. Lill

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/68785 ,  C23C16/4412 ,  H01J37/185 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/2001 ,  H01L21/6719

摘要： A method and apparatus for vacuum processing of a workpiece, the apparatus including a flow equalizer disposed in a vacuum processing chamber between a workpiece support pedestal and a pump port located in a wall of the vacuum processing chamber. In an embodiment, the flow equalizer has a first annular surface concentric about the workpiece support pedestal to provide conductance symmetry about the workpiece support even when the pump port is asymmetrically positioned within the vacuum processing chamber. In an embodiment, the flow equalizer has a second annular surface facing a lower surface of the workpiece support pedestal to restrict conductance as the flow equalizer is moved is response to a chamber pressure control signal. In an embodiment, the apparatus for vacuum processing of a workpiece includes tandem vacuum processing chambers sharing a vacuum pump with each tandem chamber including a flow equalizer to reduce cross-talk between the tandem chambers.

摘要翻译： 一种用于真空处理工件的方法和装置，该装置包括设置在工件支撑基座和位于真空处理室的壁中的泵口之间的真空处理室中的流量均衡器。 在一个实施例中，流量均衡器具有围绕工件支撑基座同心的第一环形表面，以便即使当泵口不对称地位于真空处理室内时也能够提供关于工件支撑件的电导对称性。 在一个实施例中，流量均衡器具有面向工件支撑基座的下表面的第二环形表面，以在流量均衡器移动时限制电导响应于腔室压力控制信号。 在一个实施例中，用于真空处理工件的装置包括串联真空处理室，其共享真空泵，每个串联室包括流量均衡器以减少串联室之间的串扰。

公开(公告)号：US07601246B2

公开(公告)日：2009-10-13

申请号：US10952088

申请日：2004-09-29

申请人： Jisoo Kim ,  Jong Shon ,  Biming Yen ,  Peter Loewenhardt

发明人： Jisoo Kim ,  Jong Shon ,  Biming Yen ,  Peter Loewenhardt

IPC分类号： C23C14/34

CPC分类号： C23C14/3457 ,  C23C14/185 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814 ,  H01L2221/1063

摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

摘要翻译： 将含硅或金属材料的保护涂层沉积到半导体衬底上的方法包括将这种材料从电极溅射到等离子体处理室中的半导体衬底上。 保护材料可以沉积在覆盖低k材料和/或低k材料的多层掩模上。 该方法可用于双镶嵌工艺中以保护掩模并增强蚀刻选择性，以在抗蚀剂剥离过程中保护低k材料免受碳的损耗，和/或保护低k材料免受水分吸收。

公开(公告)号：US20090020417A1

公开(公告)日：2009-01-22

申请号：US10952088

申请日：2004-09-29

申请人： Jisoo Kim ,  Jong Shon ,  Bi Ming Yen ,  Peter Loewenhardt

发明人： Jisoo Kim ,  Jong Shon ,  Bi Ming Yen ,  Peter Loewenhardt

IPC分类号： C23C14/34

CPC分类号： C23C14/3457 ,  C23C14/185 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814 ,  H01L2221/1063

摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

公开(公告)号：US09140355B2

公开(公告)日：2015-09-22

申请号：US13540391

申请日：2012-07-02

申请人： Jisoo Kim

发明人： Jisoo Kim

IPC分类号： B60K20/00 ,  G05G5/00 ,  F16H61/22

CPC分类号： F16H61/22 ,  F16H2061/223 ,  Y10T74/20085

摘要： Disclosed therein is an automatic transmission lever assembly having a shift-lock cam having an electromagnet. The automatic transmission lever assembly includes: a base bracket fixed to a frame of a vehicle; a rod; a rotating member joined to a lower end of the rod, the rotating member rotating on a predetermined shaft according to a movement of the rod for changing a transmission mode and having a locking portion formed at a position corresponding to a shift-lock; a shift-lock cam having a permanent magnet, the shift-lock cam being caught to the locking portion at a shift-lock position and being rotatable on the shaft; and an electromagnet provided at a position facing the permanent magnet, wherein when a brake signal is transferred, electric current flows to the electromagnet, so that the shift-lock cam is operated in a direction to be released from the locking portion.

摘要翻译： 其中公开了一种自动变速杆组件，其具有带有电磁铁的换挡锁定凸轮。 自动变速杆组件包括：固定在车辆框架上的底架; 一根杆 连接到所述杆的下端的旋转构件，所述旋转构件根据用于改变变速器模式的杆的移动而在预定轴上旋转，并且具有形成在对应于换档锁定的位置的锁定部; 具有永磁体的换档锁定凸轮，所述换档锁定凸轮在换档锁定位置处被卡止到所述锁定部分并且可以在所述轴上旋转; 以及设置在面向永磁体的位置的电磁体，其中当传递制动信号时，电流流向电磁体，使得换挡锁定凸轮沿着从锁定部分释放的方向操作。