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    Apparatus for the deposition of a conformal film on a substrate and methods therefor
    1.
    发明授权
    Apparatus for the deposition of a conformal film on a substrate and methods therefor 有权
    用于在基底上沉积保形膜的装置及其方法

    公开(公告)号：US08357434B1

    公开(公告)日：2013-01-22

    申请号：US11304223

    申请日：2005-12-13

    申请人： Dae-han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

    发明人： Dae-han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

    IPC分类号： H05H1/24

    CPC分类号： H01L21/0338 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834

    摘要： A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film.

    摘要翻译： 公开了一种在等离子体处理系统的等离子体处理室中的基板上沉积保形膜的方法，该基板设置在卡盘上，该卡盘与冷却装置连接。 该方法包括在第一压力下将第一气体混合物流入等离子体处理室，其中第一气体混合物至少包括碳，并且其中第一气体混合物具有冷凝温度。 该方法还包括使用冷却装置将夹盘冷却至冷凝温度以下，从而允许至少一些第一气体混合物在基板的表面上冷凝。 该方法还包括从处理室排出第一气体混合物; 将第二气体混合物流入等离子体处理室，第二气体混合物的组成与第一气体混合物不同; 并冲击等离子体以形成保形膜。

    Stabilized photoresist structure for etching process
    2.
    发明授权
    Stabilized photoresist structure for etching process 有权
    用于蚀刻工艺的稳定光致抗蚀剂结构

    公开(公告)号：US07241683B2

    公开(公告)日：2007-07-10

    申请号：US11076087

    申请日：2005-03-08

    申请人： Eric Hudson ,  S. M. Reza Sadjadi

    发明人： Eric Hudson ,  S. M. Reza Sadjadi

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/31144 ,  H01L21/0273 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/76807 ,  H01L2221/1063 ,  Y10S438/942 ,  Y10S438/945 ,  Y10S438/947

    摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

    摘要翻译： 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。 第一掩模被横向蚀刻，其中蚀刻的第一掩模限定宽度大于第一掩模的空间的宽度的多个空间。 在蚀刻的第一掩模上形成侧壁层，其中侧壁层限定宽度小于由蚀刻的第一掩模限定的空间的宽度的多个空间。 特征通过侧壁蚀刻到蚀刻层中，其中特征具有的宽度小于由蚀刻的第一掩模限定的空间的宽度。 去除掩模和侧壁层。

    Vertical profile fixing
    3.
    发明申请
    Vertical profile fixing 有权
    垂直型材固定

    公开(公告)号：US20070075038A1

    公开(公告)日：2007-04-05

    申请号：US11244870

    申请日：2005-10-05

    申请人： S.M. Sadjadi ,  Peter Cirigliano ,  Jisoo Kim ,  Zhisong Huang ,  Eric Hudson

    发明人： S.M. Sadjadi ,  Peter Cirigliano ,  Jisoo Kim ,  Zhisong Huang ,  Eric Hudson

    IPC分类号： B44C1/22 ,  C23F1/00 ,  H01L21/306 ,  C03C15/00

    CPC分类号： H01L21/0273 ,  H01L21/31144

    摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

    摘要翻译： 提供了一种蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。 沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除面具。

    Multi-section fishing device
    6.
    发明授权
    Multi-section fishing device 有权

    公开(公告)号：US10149463B2

    公开(公告)日：2018-12-11

    申请号：US15499273

    申请日：2017-04-27

    申请人： Eric Hudson

    发明人： Eric Hudson ,  Van Lee

    IPC分类号： A01K85/00 ,  A01K85/18 ,  A01K91/06

    摘要： A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.

    Multi-section fishing device
    7.
    发明授权
    Multi-section fishing device 有权

    公开(公告)号：US09655353B1

    公开(公告)日：2017-05-23

    申请号：US15079587

    申请日：2016-03-24

    申请人： Eric Hudson

    发明人： Eric Hudson ,  Van Lee

    IPC分类号： A01K85/00 ,  A01K85/18

    CPC分类号： A01K85/18 ,  A01K85/00 ,  A01K91/06

    摘要： A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.

    Negative ion control for dielectric etch
    9.
    发明授权
    Negative ion control for dielectric etch 有权
    负离子控制电介质蚀刻

    公开(公告)号：US09117767B2

    公开(公告)日：2015-08-25

    申请号：US13188421

    申请日：2011-07-21

    申请人： Alexei Marakhatanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    发明人： Alexei Marakhatanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    IPC分类号： H01L21/3065 ,  H01J37/02 ,  H01J37/32 ,  C23C14/34 ,  C23C16/505 ,  H01L21/311 ,  H01L21/67 ,  H05H1/46

    CPC分类号： H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

    摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

    摘要翻译： 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加 到晶片表面的负离子通量。

    Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
    10.
    发明授权
    Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber 有权
    在可调间隙等离子体室中双重限制和超高压的方法和装置

    公开(公告)号：US08869741B2

    公开(公告)日：2014-10-28

    申请号：US12368843

    申请日：2009-02-10

    申请人： Andreas Fischer ,  Eric Hudson

    发明人： Andreas Fischer ,  Eric Hudson

    IPC分类号： C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01L21/306 ,  C23F1/00 ,  H01J37/32 ,  C23C16/06 ,  C23C16/22

    CPC分类号： H01J37/32091 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/3299 ,  H01L21/3065

    摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.

    摘要翻译： 提供了一种等离子体处理系统，其具有用于处理基板的等离子体处理室。 等离子体处理系统至少包括用于处理衬底的上电极和下电极。 在等离子体处理期间，衬底设置在下电极上，其中上电极和衬底形成第一间隙。 等离子体处理系统还包括上电极周边延伸（UE-PE）。 UE-PE机械地耦合到上电极的周边，其中UE-PE被配置为与上电极非共面。 等离子体处理系统还包括盖环。 盖环被配置为同心地围绕下电极，其中UE-PE和盖环形成第二间隙。