摘要:
A display device and method of fabricating the same are disclosed. In one aspect, the display device includes a substrate, a black matrix formed over the substrate, and a transparent electrode formed over the substrate. The black matrix and the transparent electrode have first and second areas, respectively. The sum of the first and second areas is substantially equal to the surface area of the substrate.
摘要:
A display device and method of fabricating the same are disclosed. In one aspect, the display device includes a substrate, a black matrix formed over the substrate, and a transparent electrode formed over the substrate. The black matrix and the transparent electrode have first and second areas, respectively. The sum of the first and second areas is substantially equal to the surface area of the substrate.
摘要:
A method of manufacturing a pattern includes forming a pattern material layer on a substrate, forming a protective layer on the pattern material layer, forming a resist layer on the protective layer, selectively exposing the resist layer to light, and developing the selectively exposed resist layer.
摘要:
A thin film transistor (TFT) array panel and a manufacturing method thereof are disclosed. A contact hole may be formed to expose a pad disposed on a substrate of the TFT array panel. A first layer of a connecting member is formed with the same layer as a first field generating electrode and is disposed in the contact hole. A second passivation layer is disposed in the TFT array panel, but is removed at a region where the contact hole is formed and portions of the second passivation layer that cover the first layer of the connecting member. A second layer of the connecting member is formed on the first layer of the connecting member.
摘要:
Instead of forming contact holes the same way in both the non-image forming peripheral area (PA) and the image forming display area of a thin film transistor array panel, contact holes in the DA are formed to be substantially smaller than those in the PA for thereby improving an aperture ratio of the corresponding display device. In an exemplary embodiment, an inorganic gate insulating layer is not etched in the DA and only an inorganic first passivation layer among inorganic insulating layers positioned in the DA is etched to allow communication between the drain electrode and the corresponding field generating electrode. On the other hand, in the peripheral area, plural inorganic insulating layers such as the gate insulating layer, the first passivation layer, and the second passivation layer positioned on the gate wire and the data wire are simultaneously etched to form second contact holes and third contact holes exposing respective gate pads and data pads.
摘要:
A display apparatus includes a first substrate, a second substrate disposed on the first substrate, and a controllable layer disposed between the first and second substrates. The first substrate includes a pixel. The pixel includes a display region and a non-display region. The first substrate further includes: a transistor disposed in the non-display region; a protection layer disposed on and covering the transistor; a first electrode disposed on the protection layer; and a second electrode disposed on the first electrode, the second electrode being insulated from the first electrode and including a slit disposed in the display region. One of the first electrode and the second electrode is electrically connected to the transistor via a contact hole extending through the protection layer. The other of the first electrode and the second electrode is configured to receive a common voltage. The contact hole and the slit do not overlap one another.
摘要:
A display apparatus includes a substrate and a plurality of pixels disposed on the substrate. Each pixel includes a gate electrode on the substrate, a common electrode insulated from the gate electrode on the substrate, a first insulating layer covering the gate electrode and the common electrode, a semiconductor pattern disposed on the first insulating layer to overlap with the gate electrode, source and drain electrodes disposed on the semiconductor pattern and spaced apart from each other, and a pixel electrode disposed on the first insulating layer to cover the drain electrode and form an electric field with the common electrode. The display apparatus may be manufactured by first to fourth photolithography processes using first to fourth masks, and the first mask may be a slit mask or a diffraction mask.
摘要:
Display substrates, methods of manufacturing the same and display devices including the same disclosed. In one aspect, a display substrate includes a base substrate and a stack structure over the base substrate, the stack structure including an active pattern, a gate electrode and a plurality of insulation layers. The display substrate also includes a plurality of wirings over the stack structure and a plurality of colored capping patterns over respective ones of the wirings.
摘要:
A photoresist composition, a method of forming a pattern, and a method of manufacturing a thin film transistor substrate, the composition including a solvent, a novolak resin, a diazide-based photo-sensitizer, an acryl compound represented by the following Chemical Formula 1:
摘要:
A display apparatus includes a first substrate, a second substrate disposed on the first substrate, and a controllable layer disposed between the first and second substrates. The first substrate includes a pixel. The pixel includes a display region and a non-display region. The first substrate further includes: a transistor disposed in the non-display region; a protection layer disposed on and covering the transistor; a first electrode disposed on the protection layer; and a second electrode disposed on the first electrode, the second electrode being insulated from the first electrode and including a slit disposed in the display region. One of the first electrode and the second electrode is electrically connected to the transistor via a contact hole extending through the protection layer. The other of the first electrode and the second electrode is configured to receive a common voltage. The contact hole and the slit do not overlap one another.