中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

21 records (took 0.018 seconds)

    ACOUSTIC WAVE FILTER DEVICE
    11.
    发明申请
    ACOUSTIC WAVE FILTER DEVICE 审中-公开

    公开(公告)号：US20200036358A1

    公开(公告)日：2020-01-30

    申请号：US16356223

    申请日：2019-03-18

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Yoon Sok PARK ,  Won Kyu JEUNG ,  Tah Joon PARK ,  Dae Hun JEONG ,  Sang Uk SON

    IPC: H03H9/05 ,  H03H9/56 ,  H03H9/13 ,  H03H9/17

    Abstract: An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.

    BULK-ACOUSTIC WAVE RESONATOR
    14.
    发明申请
    BULK-ACOUSTIC WAVE RESONATOR 有权

    公开(公告)号：US20210313950A1

    公开(公告)日：2021-10-07

    申请号：US16930885

    申请日：2020-07-16

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Won HAN ,  Tae Yoon KIM ,  Chang Hyun LIM ,  Sang Uk SON ,  Jae Hyoung GIL ,  Dae Hun JEONG

    IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17

    Abstract: A bulk-acoustic wave resonator includes: a first electrode disposed above a substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. A plurality of steps are formed in any one or any combination of any two or more of the first electrode, the piezoelectric layer, and the second electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode are all disposed to overlap one another.

    BULK-ACOUSTIC WAVE RESONATOR
    15.
    发明申请
    BULK-ACOUSTIC WAVE RESONATOR 审中-公开

    公开(公告)号：US20200052674A1

    公开(公告)日：2020-02-13

    申请号：US16362743

    申请日：2019-03-25

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Dae Hun JEONG ,  Sung Wook KIM ,  Sang Uk SON ,  Sang Heon HAN ,  Won HAN

    IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17

    Abstract: A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer.

    ACOUSTIC RESONATOR
    16.
    发明申请
    ACOUSTIC RESONATOR 审中-公开

    公开(公告)号：US20190158057A1

    公开(公告)日：2019-05-23

    申请号：US16137710

    申请日：2018-09-21

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Dae Hun JEONG ,  Sang Uk SON ,  Won HAN ,  Jong Woon KIM

    IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17

    Abstract: An acoustic resonator includes: a substrate; a resonant region including a first electrode, a piezoelectric layer, and a second electrode disposed on the substrate, and a reflective layer disposed along a periphery of the resonant region; and a connection electrode extending from the second electrode. The reflective layer includes a second section disposed between the resonant region and the connection electrode, and a first section, and a cross-sectional area of the first section is different than a cross-sectional area of the second section.

    SENSOR ELEMENT AND METHOD OF MANUFACTURING THE SAME
    20.
    发明申请
    SENSOR ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
    传感器元件及其制造方法

    公开(公告)号：US20170001857A1

    公开(公告)日：2017-01-05

    申请号：US15059803

    申请日：2016-03-03

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Dae Hun JEONG ,  Chang Hyun LIM ,  Tae Hun LEE

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0072 ,  B81B7/0029 ,  B81B7/0048 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C1/00404 ,  B81C2201/0132

    Abstract: Provided are sensor elements and a method of manufacturing the same. The sensor element includes a die, an active part including a frame surrounded by the die, a first trench disposed between the die and the active part, and a bridge connecting the die and the frame and a second trench being formed in the bridge, whereby electrical connection from the active part to an electrode pad may be secured and transfer of external stress to the active part may be significantly reduced through the second trench.

    Abstract translation: 提供传感器元件及其制造方法。 传感器元件包括管芯，包括由管芯包围的框架的有源部件，设置在管芯和有源部件之间的第一沟槽，以及连接管芯和框架的桥和在桥中形成的第二沟槽，由此 可以确保从有源部分到电极焊盘的电连接，并且可以通过第二沟槽显着地减少对有源部分的外部应力的传递。

Patent Agency Ranking