公开(公告)号：US12021553B2

公开(公告)日：2024-06-25

申请号：US17532971

申请日：2021-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongho Park ,  Yongbin Yoon ,  Hyunsoo Kim ,  Youngjun Park ,  Hyangbok Lee ,  Hyungjoon Yu ,  Youngkwon Lee

IPC: H04B1/04 ,  H04B17/10

CPC classification number: H04B1/0458 ,  H04B17/102

Abstract: Various embodiments of an electronic device for matching an antenna impedance may include an antenna, a wireless communication module, an impedance matching module, and at least one processor, wherein the at least one processor is configured to: select a first index corresponding to an impedance of the antenna among a plurality of sampled indexes through a first measurement in which a tuning code of the impedance matching module is configured as a reference code; identify a use environment corresponding to the first index; select a second index corresponding to the impedance of the antenna among the plurality of sampled indexes through a second measurement in which the tuning code of the impedance matching module is configured as the reference code and as a ground code corresponding to the use environment; and adjust the impedance of the antenna based on a tuning code corresponding to the second index.

公开(公告)号：US11184040B2

公开(公告)日：2021-11-23

申请号：US17030288

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongho Park ,  Yongbin Yoon ,  Hyunsoo Kim ,  Youngjun Park ,  Hyangbok Lee ,  Hyungjoon Yu ,  Youngkwon Lee

IPC: H04B1/04 ,  H04B17/10

Abstract: Various embodiments of an electronic device for matching an antenna impedance may include an antenna, a wireless communication module, an impedance matching module, and at least one processor, wherein the at least one processor is configured to: select a first index corresponding to an impedance of the antenna among a plurality of sampled indexes through a first measurement in which a tuning code of the impedance matching module is configured as a reference code; identify a use environment corresponding to the first index; select a second index corresponding to the impedance of the antenna among the plurality of sampled indexes through a second measurement in which the tuning code of the impedance matching module is configured as the reference code and as a ground code corresponding to the use environment; and adjust the impedance of the antenna based on a tuning code corresponding to the second index.

公开(公告)号：US20210320042A1

公开(公告)日：2021-10-14

申请号：US17098748

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Hyunggil Baek ,  Seunghwan Kim ,  Jungjoo Kim ,  Jongho Park ,  Yongkwan Lee

IPC: H01L23/16 ,  H01L25/065 ,  H01L23/538 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor package is provided. The semiconductor package includes: a first package substrate; a first semiconductor chip on the first package substrate; an interposer substrate including a lower surface facing the first package substrate, an upper surface opposite to the lower surface, and an upper conductive pad in the upper surface of the interposer substrate; a first dam structure on the upper surface of the interposer substrate and extending along an edge of the upper conductive pad; a first molding layer in contact with the lower and upper surfaces of the interposer substrate and with an outer wall of the first dam structure; and a conductive connector in contact with an inner wall of the at least one first dam structure and with the upper conductive pad.

公开(公告)号：US11145738B2

公开(公告)日：2021-10-12

申请号：US16886881

申请日：2020-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongho Park ,  Byounghoon Lee ,  Seungkeun Cha ,  Wandon Kim

IPC: H01L29/49 ,  H01L29/45 ,  H01L29/06 ,  H01L29/423 ,  H01L29/10

Abstract: Semiconductor devices are provided. A semiconductor device includes a first active pattern on a first region of a substrate, a pair of first source/drain patterns on the first active pattern, a first channel pattern between the pair of first source/drain patterns, and a gate electrode that extends across the first channel pattern. The gate electrode is on an uppermost surface and at least one sidewall of the first channel pattern. The gate electrode includes a first metal pattern including a p-type work function metal, a second metal pattern on the first metal pattern and including an n-type work function metal, a first barrier pattern on the second metal pattern and including an amorphous metal layer that includes tungsten (W), carbon (C), and nitrogen (N), and a second barrier pattern on the first barrier pattern. The second barrier pattern includes the p-type work function metal.

公开(公告)号：US11101243B2

公开(公告)日：2021-08-24

申请号：US16680657

申请日：2019-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho Park ,  Kyungsuk Oh ,  Hyunki Kim ,  Yongkwan Lee ,  Sangsoo Kim ,  Seungkon Mok ,  Junyoung Oh ,  Changyoung Yoo

IPC: H01L25/065 ,  H01L23/16 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor package including a circuit substrate including a plurality of interconnections; a first chip on the circuit substrate; a second chip stacked on the first chip; a plurality of first pads on the circuit substrate, the plurality of first pads overlapping the first chip; a plurality of bumps between the circuit substrate and the first chip; a plurality of second pads on an edge portion of a first side of the circuit substrate, the plurality of second pads electrically connected to the second chip through a conductive wire; an underfill that fills a space between the circuit substrate and the first chip; and a first dam on the circuit substrate, the first dam overlapping the first chip. The first dam includes a conductive material and overlaps at least one of the plurality of interconnections.

公开(公告)号：US10971938B2

公开(公告)日：2021-04-06

申请号：US15881446

申请日：2018-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongho Park ,  Inho Yun ,  Doo-Suk Kang ,  Jeong-Min Park

IPC: H02J7/00 ,  A61B5/0408 ,  A61B5/0245 ,  A61B5/00 ,  G16H50/00 ,  A61B5/0205

Abstract: An electronic device that can be worn on a user's body and an operating method thereof. An electrode for charging and measuring is included in a front side of the electronic device. The electronic device includes a battery, a charging circuit for charging the battery, a bio-sensor, and a processor. The processor is configured to determine whether the battery is being charged through the charging circuit. If the battery is not being charged, the processor is configured to acquire biometric information by using a first method through the bio-sensor, and if the battery is being charged, the processor is configured to acquire the biometric information by using a second method through the bio-sensor.

公开(公告)号：US20210035989A1

公开(公告)日：2021-02-04

申请号：US16780006

申请日：2020-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Lee ,  Jongho Park ,  Musarrat Hasan ,  Wandon Kim ,  Seungkeun Cha

IPC: H01L27/1159 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, a channel on or in the substrate, a source/drain pair respectively on opposite ends of the channel, and a gate structure on the channel between the source/drain pair, wherein the gate structure includes an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, and a threshold voltage control layer that are sequentially stacked on the channel.

公开(公告)号：US12062661B2

公开(公告)日：2024-08-13

申请号：US17831861

申请日：2022-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho Park ,  Jaeyeol Song ,  Wandon Kim ,  Byounghoon Lee ,  Musarrat Hasan

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/161 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L27/0922 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/516 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/78696

Abstract: A semiconductor device includes first and second active patterns on first and second active regions of a substrate, respectively, a pair of first source/drain patterns and a first channel pattern therebetween which are in an upper portion of the first active pattern, a pair of second source/drain patterns and a second channel pattern therebetween which are in an upper portion of the second active pattern, and first and second gate electrodes intersecting the first and second channel patterns, respectively. Each of the first and second gate electrodes includes a first metal pattern adjacent to a corresponding one of the first and second channel patterns. The first and second channel patterns include SiGe. A Ge concentration of the second channel pattern is higher than a Ge concentration of the first channel pattern. A thickness of the first metal pattern of the second gate electrode is greater than a thickness of the first metal pattern of the first gate electrode.

公开(公告)号：US12047884B2

公开(公告)日：2024-07-23

申请号：US17449345

申请日：2021-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngkwon Lee ,  Youngjun Park ,  Hyungjoon Yu ,  Hyoungjoo Lee ,  Jongho Park

IPC: H04W4/00 ,  H04W52/24 ,  H04W52/32 ,  H04W52/36

CPC classification number: H04W52/325 ,  H04W52/241 ,  H04W52/367

Abstract: According to various embodiments, an electronic device may include: multiple antennas configured to support long-term evolution (LTE) communication and new radio (NR) communication; a memory configured to store association information between first multiple output powers used for the LTE communication and second multiple output powers used for the NR communication corresponding to the first multiple output powers respectively, and at least one processor, wherein the at least one processor is configured to: configure an LTE transmission power to be used for data transmission in a physical uplink shared channel (PUSCH) of the LTE communication, identify a first NR output power maximum value corresponding to the LTE transmission power based on the association information, identify a sounding reference signal (SRS) output power to be used for SRS transmission through at least one of the multiple antennas, and at least temporarily reduce the LTE transmission power based on the SRS output power being greater than the first NR output power maximum value.

公开(公告)号：US20230403861A1

公开(公告)日：2023-12-14

申请号：US18453483

申请日：2023-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Lee ,  Jongho Park ,  Musarrat Hasan ,  Wandon Kim ,  Seungkeun Cha

IPC: H10B51/30 ,  H01L29/78 ,  H01L29/51 ,  H10B51/00

CPC classification number: H10B51/30 ,  H01L29/78391 ,  H01L29/516 ,  H01L29/511 ,  H10B51/00

Abstract: A semiconductor device includes a substrate, a channel on or in the substrate, a source/drain pair respectively on opposite ends of the channel, and a gate structure on the channel between the source/drain pair, wherein the gate structure includes an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, and a threshold voltage control layer that are sequentially stacked on the channel.