公开(公告)号：US12237181B2

公开(公告)日：2025-02-25

申请号：US17703255

申请日：2022-03-24

Applicant: SEMES CO., LTD.

Inventor： Ho Jong Hwang ,  Do Yeon Kim ,  Hyun Yoon

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  H01L21/687

Abstract: The present invention provides a substrate treating apparatus. The substrate treating apparatus includes: a cup having a treatment space therein; a support unit configured to support a substrate within the treatment space, and including a rotatable support plate; and a liquid discharge unit configured to discharge a chemical liquid to the substrate supported by the support unit, in which the support unit includes: a plurality of pin members provided to the support plate to support the substrate placed on the support plate; and a discharge member coupled to the pin member to discharge charges to the air according to a rotation of the support plate, and the discharge member is provided as a conductive member.

公开(公告)号：US12142493B2

公开(公告)日：2024-11-12

申请号：US17986894

申请日：2022-11-15

Applicant: SEMES CO., LTD.

Inventor： Young Jun Son ,  Tae Hoon Lee ,  Sung Gyu Lee ,  Hyun Yoon ,  Do Yeon Kim

IPC: H01L21/67 ,  B01D35/02

Abstract: A substrate processing apparatus includes: a nozzle unit configured to discharge a processing liquid to a substrate; a pipe connected to the nozzle unit and a processing liquid supply unit supplying the processing liquid; a charge amount control unit disposed at the pipe, including a filter unit charged with positive charges or negative charges, and including at least one of a control valve, controlling a flow rate of the processing liquid passing through an inside of the filter unit, and a power supply unit, applying a voltage to the filter unit, to control a charge amount of the processing liquid; and a control unit connected to the charge amount control unit.

公开(公告)号：US11961695B2

公开(公告)日：2024-04-16

申请号：US17409840

申请日：2021-08-24

Applicant: SEMES CO., LTD.

Inventor： Doyeon Kim ,  Hyun Yoon ,  Ho Jong Hwang

IPC: H01J37/02 ,  H01J37/20 ,  H01J37/317 ,  H01L21/687

CPC classification number: H01J37/026 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/6875 ,  H01J2237/0044 ,  H01J2237/2007

Abstract: An apparatus for treating a substrate includes a process chamber that performs a liquid treatment process by dispensing a treatment liquid onto the substrate, and components provided in the process chamber. A surface of at least one of the components is formed of a material containing an ion-implanted fluorine resin.

公开(公告)号：US11804371B2

公开(公告)日：2023-10-31

申请号：US16920418

申请日：2020-07-02

Applicant: SEMES CO., LTD.

Inventor： Do Yeon Kim ,  Se Hoon Oh ,  Won Geun Kim ,  Ju Mi Lee ,  Ho Jong Hwang ,  Pil Kyun Heo ,  Hyun Yoon ,  Choong Hyun Lee ,  Hyun Goo Park

IPC: H01L21/02 ,  H01L21/67 ,  B05C11/08 ,  G03F7/16

CPC classification number: H01L21/02057 ,  H01L21/6715 ,  B05C11/08 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/67051

Abstract: Provided is a substrate treatment apparatus including a treatment container equipped with a conductive member. The conductive member is made of a material having a lower resistivity than that of the treatment container. The conductive member prevents a rise of an electric potential of the treatment container, which is caused by charging during treatment of a substrate, thereby preventing the substrate from being contaminated and damaged by particles and electrostatic arcing.

公开(公告)号：US11495467B2

公开(公告)日：2022-11-08

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk Goh ,  Jae Seong Lee ,  Do Youn Lim ,  Kuk Saeng Kim ,  Young Dae Chung ,  Tae Shin Kim ,  Jee Young Lee ,  Won Geun Kim ,  Ji Hoon Jeong ,  Kwang Sup Kim ,  Pil Kyun Heo ,  Yoon Ki Sa ,  Ye Rim Yeon ,  Hyun Yoon ,  Do Yeon Kim ,  Yong Jun Seo ,  Byeong Geun Kim ,  Young Je Um

IPC: H01L21/26 ,  H01L21/311 ,  H01L21/67 ,  H01L21/66

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

公开(公告)号：US20210384064A1

公开(公告)日：2021-12-09

申请号：US17341696

申请日：2021-06-08

Applicant: SEMES CO., LTD.

Inventor： Do Yeon Kim ,  Pil Kyun Heo ,  Ho Jong Hwang ,  Hyun Yoon ,  Jong Min Lee ,  Chul Gyun Baik

IPC: H01L21/687 ,  B29C45/00 ,  B29C45/16

Abstract: A heterogeneous composite material and a method for manufacturing the heterogeneous composite material are provided. The heterogeneous composite material includes a first compression structure formed by compressing a first material, and a second compression structure formed by compressing a second material different from the first material, and disposed in close contact with the first compression structure, wherein at least a portion of the first compression structure and at least a portion of the second compression structure are disposed on both sides of a boundary surface existing in a circular shape with a predetermined radius with respect to a central axis in a state in contact with each other at the boundary surface.