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公开(公告)号：US20150155077A1
公开(公告)日：2015-06-04
申请号：US14548814
申请日：2014-11-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Teppei OGUNI , Kiyofumi OGINO , Hisao IKEDA
CPC classification number: H05K1/09 , G06F3/044 , G06F2203/04103 , G06F2203/04111 , H01B1/04 , H01L27/323 , H01L27/3244 , H01L51/5246 , H01L2251/5307 , H01L2251/5315 , H05K1/092 , H05K3/06 , H05K3/12 , H05K3/1283 , H05K2201/0323 , H05K2201/10151
Abstract: A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low cost and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.
Abstract translation: 提供了一个新颖的元素。 提供了一种新颖的成膜方法。 提供了一种新颖的元件制造方法。 此外，以低成本和高产率形成包括石墨烯的膜。 元件包括第一电极和与第一电极分开的第二电极。 第一电极和第二电极包括石墨烯。 包括石墨烯的薄膜是通过在衬底上形成包括氧化石墨烯的薄膜的第一步骤形成的，第二步是将包含氧化石墨烯的薄膜浸渍在酸性溶液中;以及第三步骤，还原包括在石墨烯中的石墨烯氧化物 氧化物。 此外，在包括氧化石墨烯的薄膜中包含的氧化石墨烯之前，通过光刻技术有选择地除去包括氧化石墨烯的薄膜。
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12.发明申请NEGATIVE ELECTRODE FOR POWER STORAGE DEVICE, POWER STORAGE DEVICE, AND ELECTRICAL DEVICE 审中-公开蓄电装置用蓄电池，蓄电装置及电气装置公开(公告)号：US20150132649A1
公开(公告)日：2015-05-14
申请号：US14534275
申请日：2014-11-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kiyofumi OGINO , Yumiko YONEDA , Rika YATABE , Nobuhiro INOUE
Abstract: A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for the power storage device includes a current collector and an active material layer including a plurality of active material particles over the current collector. The active material particle is silicon, and the size of the silicon particle is greater than or equal to 0.001 μm and less than or equal to 7 μm.
Abstract translation: 提供具有高电容的蓄电装置。 提供了具有优异循环特性的蓄电装置。 提供具有高充放电效率的蓄电装置。 提供了包括具有低电阻的负极的蓄电装置。 蓄电装置的负极包括集电体和在集电体上包含多个活性物质粒子的活性物质层。 活性物质颗粒是硅，硅颗粒的尺寸大于或等于0.001μm且小于或等于7μm。
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13.发明申请ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF, AND LITHIUM-ION SECONDARY BATTERY 审中-公开锂离子二次电池用电极及其制造方法及锂离子二次电池公开(公告)号：US20150044560A1
公开(公告)日：2015-02-12
申请号：US14452848
申请日：2014-08-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kiyofumi OGINO
IPC: H01M4/134 , H01M10/0525 , H01M4/1395 , H01M4/04 , H01M4/38 , H01M4/62
CPC classification number: H01M4/134 , H01M4/0404 , H01M4/1395 , H01M4/386 , H01M4/622 , H01M4/625 , H01M4/661 , H01M4/667 , H01M10/0525 , Y02T10/7011
Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.
Abstract translation: 提供了用于锂离子二次电池的高可靠性电极。 还提供了使用锂离子二次电池用电极的高可靠性的锂离子二次电池。 锂离子二次电池用电极包括集电体和活性物质层。 活性物质层包括活性物质，石墨烯和聚酰亚胺。 活性材料包括多个纳米线，每个纳米线随着用作核的硅颗粒生长并沿一个方向延伸到细针中。 石墨烯包括与多个纳米线接触的区域，聚酰亚胺包括与石墨烯接触的区域。 锂离子二次电池使用电极作为负极。
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公开(公告)号：US20240057378A1
公开(公告)日：2024-02-15
申请号：US18259287
申请日：2021-12-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Daiki NAKAMURA , Tomoya AOYAMA , Yasutaka NAKAZAWA , Rai SATO , Seiji YASUMOTO , Kiyofumi OGINO , Takashi SHIRAISHI
CPC classification number: H10K59/1201 , H10K59/35 , H10K59/38 , H10K71/233
Abstract: A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.
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公开(公告)号：US20240014218A1
公开(公告)日：2024-01-11
申请号：US18035150
申请日：2021-11-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Rai SATO , Yasuharu HOSAKA , Yasutaka NAKAZAWA , Takashi SHIRAISHI , Kiyofumi OGINO , Kenichi OKAZAKI
IPC: H01L27/12 , H01L29/423 , H01L29/786
CPC classification number: H01L27/1225 , H01L29/42384 , H01L29/78696 , H01L29/7869 , H01L27/1288 , H01L2029/42388 , G02F1/1368
Abstract: A semiconductor device including a transistor with high on-state current and a fabrication method thereof are provided. A semiconductor device having favorable electrical characteristics and a fabrication method thereof are provided. The semiconductor device includes a substrate, an island-shaped insulating layer over the substrate, and a transistor over the substrate and the insulating layer. The transistor includes a gate electrode, a gate insulating layer, a semiconductor layer, and a pair of conductive layers. One of the pair of the conductive layers includes a region overlapping with the insulating layer, and the other of the pair of the conductive layers includes a region not overlapping with the insulating layer. The level of a top surface of the other of the pair of the conductive layers is lower than the level of a top surface of the one of the pair of the conductive layers. Each of the pair of the conductive layers is in contact with the semiconductor layer. The semiconductor layer includes a region overlapping with the gate electrode through the gate insulating layer.
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Patent Agency Ranking
公开(公告)号：US20180331357A1
公开(公告)日：2018-11-15
申请号：US16032113
申请日：2018-07-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Nobuhiro INOUE , Kiyofumi OGINO
IPC: H01M4/38 , H01G11/24 , H01M10/0525 , H01M10/052 , H01M4/48 , H01G11/06 , H01M4/36 , H01M4/134 , H01M4/13 , H01G11/50 , H01M4/02
CPC classification number: H01M4/386 , H01G11/06 , H01G11/24 , H01G11/50 , H01M4/13 , H01M4/134 , H01M4/366 , H01M4/38 , H01M4/48 , H01M10/052 , H01M10/0525 , H01M2004/027 , Y02E60/13
Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.
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17.发明申请公开(公告)号：US20180309119A1
公开(公告)日：2018-10-25
申请号：US16025109
申请日：2018-07-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kiyofumi OGINO , Yumiko YONEDA (Former SAITO) , Rika YATABE , Nobuhiro INOUE
Abstract: A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for the power storage device includes a current collector and an active material layer including a plurality of active material particles over the current collector. The active material particle is silicon, and the size of the silicon particle is greater than or equal to 0.001 μm and less than or equal to 7 μm.
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18.发明申请公开(公告)号：US20180248169A1
公开(公告)日：2018-08-30
申请号：US15965189
申请日：2018-04-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kiyofumi OGINO
IPC: H01M4/134 , H01M4/66 , H01M10/0525 , H01M4/1395 , H01M4/62 , H01M4/38 , H01M4/04
CPC classification number: H01M4/134 , H01M4/0404 , H01M4/1395 , H01M4/386 , H01M4/622 , H01M4/625 , H01M4/661 , H01M4/667 , H01M10/0525 , Y02T10/7011
Abstract: A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.
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公开(公告)号：US20170139508A1
公开(公告)日：2017-05-18
申请号：US15416610
申请日：2017-01-26
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Teppei OGUNI , Kiyofumi OGINO , Hisao IKEDA
CPC classification number: H05K1/09 , G06F3/044 , G06F2203/04103 , G06F2203/04111 , H01B1/04 , H01L27/323 , H01L27/3244 , H01L51/5246 , H01L2251/5307 , H01L2251/5315 , H05K1/092 , H05K3/06 , H05K3/12 , H05K3/1283 , H05K2201/0323 , H05K2201/10151
Abstract: A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low cost and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.
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公开(公告)号：US20160149279A1
公开(公告)日：2016-05-26
申请号：US15008491
申请日：2016-01-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kiyofumi OGINO , Yumiko SAITO
CPC classification number: H01M12/08 , H01M4/381 , H01M4/382 , H01M4/8626 , H01M4/8853 , H01M4/8882 , H01M4/96 , H01M8/0245 , H01M2300/0025 , Y02E60/128 , Y02P70/56 , Y10T29/49108
Abstract: A structure and a method of manufacturing a power storage device with high energy density are provided. An air electrode includes a first current collector; a second current collector having a projecting structure, in contact with the first current collector; and a catalyst layer having 1 to 100 graphene films. Accordingly, the surface area of the air electrode can be significantly large due to an effect of the second current collector, and further, the graphene film can produce a catalytic reaction without using a catalyst such as a noble metal; thus, by employing a structure in which the catalyst layer is provided on the second current collector, the energy density of the power storage device can be improved.
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