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    Method for manufacturing semiconductor device
    11.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US09105668B2

    公开(公告)日：2015-08-11

    申请号：US14508075

    申请日：2014-10-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

    IPC: H01L29/66 ,  H01L29/786 ,  H01L23/552 ,  H01L23/00

    CPC classification number: H01L29/78606 ,  H01L23/552 ,  H01L23/564 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

    Abstract translation: 本发明的目的是制造具有稳定的电特性和高可靠性的氧化物半导体膜的半导体装置。 通过利用包含在氧化物半导体靶中的多种原子的原子量的差异，形成结晶氧化物半导体膜，而不进行多个步骤，优选将低原子量的锌沉积在氧化物绝缘膜上 形成包含锌的晶种; 并且具有高原子量的锡，铟等沉积在晶种上同时引起晶体生长。 此外，通过使用具有包含锌作为核的六方晶系结构的晶种进行晶体生长来形成结晶氧化物半导体膜，从而形成单晶氧化物半导体膜或大致单晶氧化物半导体膜。

    Semiconductor device and manufacturing method thereof
    12.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US09054205B2

    公开(公告)日：2015-06-09

    申请号：US14064294

    申请日：2013-10-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takatsugu Omata ,  Tatsuya Honda ,  Akiharu Miyanaga ,  Hiroki Ohara

    IPC: H01L29/12 ,  H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/26 ,  H01L27/12

    CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/263 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869

    Abstract: A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.

    Abstract translation: 提供具有新颖结构的半导体器件或半导体器件的制造方法。 例如，提高了以高电压或大电流驱动的晶体管的可靠性。 为了提高晶体管的可靠性，在漏电极层（或源极电极层）和氧化物半导体层之间设置缓冲层，使得缓冲层的端部超出漏电极层的侧面 （或源电极层），从而缓冲层能够缓和电场的集中。 缓冲层是包含多个层的单层或层叠层，例如包含氮的In-Ga-Zn-O膜，含有氮的In-Sn-O膜，In-Sn-O系膜， O膜等。

    Semiconductor device
    13.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09029852B2

    公开(公告)日：2015-05-12

    申请号：US13626261

    申请日：2012-09-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

    IPC: H01L29/10 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/13394 ,  G02F1/134309 ,  G02F2202/10 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78696

    Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

    Abstract translation: 半导体器件包括栅电极，栅极绝缘膜，其包括含有硅的氧化物并覆盖栅电极，设置为与栅极绝缘膜接触并与至少栅电极重叠的氧化物半导体膜，以及源极 电极和与氧化物半导体膜电连接的漏电极。 在氧化物半导体膜中，设置为与栅极绝缘膜接触并具有小于或等于5nm的厚度的第一区域具有低于或等于1.0at的硅浓度。 ％，除了第一区域之外的氧化物半导体膜中的区域的硅浓度比第一区域低。 至少第一区域包括晶体部分。

    Semiconductor device
    14.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08860023B2

    公开(公告)日：2014-10-14

    申请号：US13870399

    申请日：2013-04-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

    IPC: H01L29/786 ,  H01L29/24

    CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

    Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

    Abstract translation: 降低氧化物半导体的沟道形成区域中的氢浓度对于稳定包括氧化物半导体的晶体管的阈值电压和提高可靠性是重要的。 因此，氢被氧化物半导体吸引并被捕获在与氧化物半导体的源极区域和漏极区域重叠的绝缘膜的区域中。 杂质如氩，氮，碳，磷或硼添加到与氧化物半导体的源极区和漏极区重叠的绝缘膜的区域中，从而产生缺陷。 氧化物半导体中的氢被吸引到绝缘膜中的缺陷。 通过氢气的存在使绝缘膜中的缺陷稳定。

    Semiconductor device
    15.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08729613B2

    公开(公告)日：2014-05-20

    申请号：US13649580

    申请日：2012-10-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd

    Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

    IPC: H01L31/062

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78693

    Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

    Abstract translation: 包含在栅极绝缘膜附近的氧化物半导体膜中的杂质元素的浓度降低。 此外，提高了栅极绝缘膜附近的氧化物半导体膜的结晶度。 半导体器件包括在氧化物半导体膜上的衬底，源电极和漏电极上的氧化物半导体膜，包含含氧化物的氧化物并形成在氧化物半导体膜上的栅极绝缘膜，以及位于氧化物半导体膜上方的栅电极 栅极绝缘膜。 氧化物半导体膜包括硅的浓度低于或等于1.0at。的区域。 ％，并且至少该区域包括晶体部分。

    Semiconductor device
    16.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08698214B2

    公开(公告)日：2014-04-15

    申请号：US13654864

    申请日：2012-10-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu

    IPC: H01L27/085

    CPC classification number: H01L29/78693 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a region in which a concentration of silicon distributed from the interface with the base insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.0 at. %. A crystal portion is included at least in the region.

    Abstract translation: 半导体器件包括：基底绝缘膜，包括硅，在基底绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，与栅极绝缘膜接触并与至少氧化物重叠的栅极; 半导体膜，以及与氧化物半导体膜电连接的源电极和漏电极。 氧化物半导体膜包括从与基底绝缘膜的界面朝向氧化物半导体膜的内部分布的硅浓度低于或等于1.0at的区域。 ％。 晶体部分至少包括在该区域中。

    Semiconductor device and method for manufacturing semiconductor device
    18.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US11742431B2

    公开(公告)日：2023-08-29

    申请号：US17501061

    申请日：2021-10-14

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

    IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/22 ,  H01L29/66969

    Abstract: A semiconductor device with favorable reliability is provided.
    The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

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