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公开(公告)号：US09455378B2
公开(公告)日：2016-09-27
申请号：US14229713
申请日：2014-03-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Hee Ye , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。
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公开(公告)号：US11515450B2
公开(公告)日：2022-11-29
申请号：US16830191
申请日：2020-03-25
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu Jang , Ju Yong Park , Kyu Ho Lee , Joon Hee Lee
Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material. The Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.
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公开(公告)号：US20220376142A1
公开(公告)日：2022-11-24
申请号：US17880614
申请日：2022-08-03
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu JANG , Ju Yong Park , Kyu Ho Lee , Joon Hee Lee
Abstract: A semiconductor light emitting device includes: a first semiconductor layer; an active layer disposed on the first semiconductor layer to emit ultraviolet light; a second semiconductor layer disposed on the active layer; a contact electrode disposed on the first semiconductor layer; a first electrode including a plurality of metal layers having a first portion and a second portion adjacent to the first portion; and a second electrode disposed on the second semiconductor layer; a first bump disposed on the first electrode and electrically coupled to the first semiconductor layer by the first electrode; and a second bump disposed on the second electrode and electrically coupled to the second semiconductor layer by the second electrode, wherein the first semiconductor layer is formed of AlGaN and has an energy larger than the ultraviolet wavelength energy generated in the active layer, wherein the first portion of the plurality of metal layers is in contact with the contact electrode and the second portion of the plurality of metal layers is disposed on and in contact with first semiconductor layer, and all of the plurality of metal layers have irregular top surfaces, respectively.
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公开(公告)号：US10290769B2
公开(公告)日：2019-05-14
申请号：US15872900
申请日：2018-01-16
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mi Hee Lee , Chang Yeon Kim , Ju Yong Park , Jong Kyun You , Joon Hee Lee
Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.
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公开(公告)号：US09991424B2
公开(公告)日：2018-06-05
申请号：US15355219
申请日：2016-11-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L31/12 , H01L33/44 , H01L33/22 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/06 , H01L33/60 , H01L33/40
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
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Patent Agency Ranking
公开(公告)号：US20150311384A1
公开(公告)日：2015-10-29
申请号：US14796421
申请日：2015-07-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun HEO , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.
Abstract translation: 制造半导体器件的方法包括在氮化镓衬底上形成包括掩模区域和开放区域的绝缘图案，生长氮化镓半导体层以覆盖绝缘图案，以及图案化半导体层以形成分离的多个半导体堆叠 所述多个半导体堆叠通过所述绝缘图案与所述氮化镓衬底电隔离。
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公开(公告)号：US20140110729A1
公开(公告)日：2014-04-24
申请号：US14138917
申请日：2013-12-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheol Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC: H01L33/62
CPC classification number: H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。
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公开(公告)号：US10249797B2
公开(公告)日：2019-04-02
申请号：US14694651
申请日：2015-04-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Yeon Kim , Da Hye Kim , Hong Chul Lim , Joon Hee Lee , Jong Kyun You
Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.
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公开(公告)号：US09508909B2
公开(公告)日：2016-11-29
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L27/15 , H01L33/60 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/44 , H01L33/06 , H01L33/00
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括接触n型化合物半导体层的Ni层和设置在Ni层上的两个Au层。
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公开(公告)号：US20160111613A1
公开(公告)日：2016-04-21
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括与n型化合物半导体层接触的Ni层和设置在Ni层上的2层Au层。
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