公开(公告)号：US20180226554A1

公开(公告)日：2018-08-09

申请号：US15944681

申请日：2018-04-03

Applicant: Seoul Viosys Co., Ltd.

Inventor： So Ra Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/64 ,  H01L33/20 ,  H01L33/38 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/642 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62

Abstract: Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

公开(公告)号：US09941455B2

公开(公告)日：2018-04-10

申请号：US15427802

申请日：2017-02-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： So Ra Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/64 ,  H01L33/20 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/642 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62

Abstract: Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

公开(公告)号：US20180076360A1

公开(公告)日：2018-03-15

申请号：US15558143

申请日：2016-03-08

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Chang Yeon Kim ,  Joon Sup Lee ,  Dae Woong Suh ,  Won Young Roh ,  Ju Yong Park ,  Seung Hyun Kim

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/62 ,  H01L27/15

CPC classification number: H01L33/382 ,  H01L27/15 ,  H01L33/20 ,  H01L33/387 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting element according to an embodiment of the present invention comprises a first conductive-type semiconductor layer including a contact region on the lower surface thereof, a light emitting structure which includes a mesa including a second conductive-type semiconductor layer and an active layer, a second electrode, a first insulation layer, an electrode cover layer, a first electrode, a second insulation layer, and a support structure. In addition, the mesa may include a body part and a plurality of protrusion parts protruding from the body part, the contact region may be disposed between the protrusion parts, and a part of the contact region may overlap with a second metal bulk in the vertical direction. Accordingly, current spreading efficiency can be improved, and thus luminance efficiency can be more improved.

公开(公告)号：US20160013388A1

公开(公告)日：2016-01-14

申请号：US14859052

申请日：2015-09-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： So Ra Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/64 ,  H01L33/20 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/642 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62

Abstract: Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

Abstract translation: 本文公开了一种发光器件。 发光装置被设置为包括发光结构，第一电极焊盘，第二电极焊盘和散热垫，以及安装有发光二极管的基板。 基板包括基体; 形成在基座上的绝缘图案; 以及布置在绝缘图案上的导电图案。 底座包括柱和将导柱与导电图案分开的凹槽。 柱的上表面被放置成低于导电图案的上表面，散热垫接触柱的上表面，并且第一电极焊盘和第二电极焊盘接触导电图案。 利用这种结构，发光器件在电稳定性和散热效率方面具有优异的性能。

公开(公告)号：US20150349232A1

公开(公告)日：2015-12-03

申请号：US14730087

申请日：2015-06-03

Applicant: Seoul Viosys Co., Ltd.

Inventor： So Ra Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/64 ,  H01L27/15 ,  H01L29/861 ,  H01L33/38 ,  H01L33/52 ,  H01L33/62

CPC classification number: H01L33/647 ,  H01L25/167 ,  H01L27/0248 ,  H01L29/861 ,  H01L29/8613 ,  H01L33/382 ,  H01L33/387 ,  H01L33/486 ,  H01L33/58 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Exemplary embodiments provide a light emitting diode and a method for manufacturing the same. The light emitting diode includes a light emitting structure, a plurality of holes formed through a second conductive type semiconductor layer and an active layer such that a first conductive type semiconductor layer is partially exposed therethrough, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, while being insulated from each other. The second electrode includes openings corresponding to the plurality of holes, a plurality of unit electrode layers separated from each other, and at least one connection layer electrically connecting at least two unit electrode layers to each other. The first electrode forms ohmic contact with the first conductive type semiconductor layer through the plurality of holes and partially covers the light emitting structure.

Abstract translation: 示例性实施例提供了一种发光二极管及其制造方法。 发光二极管包括发光结构，通过第二导电型半导体层形成的多个孔和有源层，使得第一导电类型半导体层部分地暴露在其中，第一电极和第二电极电连接到 第一导电类型半导体层和第二导电类型半导体层，同时彼此绝缘。 第二电极包括对应于多个孔的开口，彼此分离的多个单位电极层以及将至少两个单位电极层彼此电连接的至少一个连接层。 第一电极通过多个孔与第一导电类型半导体层形成欧姆接触，并且部分地覆盖发光结构。

公开(公告)号：US20230395752A1

公开(公告)日：2023-12-07

申请号：US18230616

申请日：2023-08-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ju Yong Park ,  Seong Gyu JANG ,  Kyu Ho LEE ,  Joon Hee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/00 ,  H01L33/24

CPC classification number: H01L33/38 ,  H01L33/24 ,  H01L33/00 ,  H01L33/62

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

公开(公告)号：US20190148596A1

公开(公告)日：2019-05-16

申请号：US16246565

申请日：2019-01-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ju Yong Park ,  Seong Gyu Jang ,  Kyu Ho Lee ,  Joon Hee Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/24

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer located on the substrate; a mesa arranged on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer coming in contact with the n-type semiconductor layer; a p-ohmic contact layer coming in contact with the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a main branch and a plurality of sub branches extending from the main branch, the n-ohmic contact layer encompasses the mesa and is interposed in an area between the sub branches, and the n-bump and the p-bump respectively cover the upper part and sides of the mesa. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

公开(公告)号：US10283685B2

公开(公告)日：2019-05-07

申请号：US15514492

申请日：2015-09-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/64 ,  H01L33/48

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

公开(公告)号：US20190044027A1

公开(公告)日：2019-02-07

申请号：US15872900

申请日：2018-01-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mi Hee Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Jong Kyun You ,  Joon Hee Lee

IPC: H01L33/20 ,  H01L33/10 ,  H01L33/32

Abstract: Disclosed herein is a vertical type light emitting diode having a mesa including a groove. The light emitting diode includes: a support substrate; a first conductivity type semiconductor layer disposed on the support substrate; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer through the second conductivity type semiconductor layer and the active layer; a first electrode disposed between the second conductivity type semiconductor layer and the support substrate and including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

公开(公告)号：US20180204991A1

公开(公告)日：2018-07-19

申请号：US15854631

申请日：2017-12-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/50 ,  H01L33/38 ,  H01L33/64 ,  H01L33/46 ,  H01L33/32 ,  H01L33/48

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.