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    Ultraviolet light emitting device having current blocking layer
    11.
    发明授权
    Ultraviolet light emitting device having current blocking layer 有权

    公开(公告)号：US10340418B2

    公开(公告)日：2019-07-02

    申请号：US15865051

    申请日：2018-01-08

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Ji Hye Kim ,  Sang Won Woo

    IPC: H01L33/46 ,  H01L33/14 ,  H01L33/40 ,  H01L33/20 ,  H01L33/38

    Abstract: Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a current blocking layer disposed on the second conductivity-type semiconductor layer; a transparent electrode layer covering the current blocking layer; a first electrode electrically connected to the first conductivity-type semiconductor layer; a second electrode disposed on the transparent electrode layer and electrically connected to the transparent electrode layer, the second electrode including a second electrode pad and a second electrode extension extending from the second electrode pad; and a second reflective layer interposed between the second electrode and the transparent electrode layer, wherein each of the second electrode pad and the second electrode extension covers at least part of the current blocking layer.

    Light-emitting diode with improved light extraction efficiency
    12.
    发明授权
    Light-emitting diode with improved light extraction efficiency 有权

    公开(公告)号：US10243109B2

    公开(公告)日：2019-03-26

    申请号：US15965757

    申请日：2018-04-27

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

    IPC: H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/20

    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

    Compact light emitting diode chip, light emitting device and electronic device including the same
    14.
    发明授权
    Compact light emitting diode chip, light emitting device and electronic device including the same 有权

    公开(公告)号：US10126831B2

    公开(公告)日：2018-11-13

    申请号：US15279549

    申请日：2016-09-29

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

    IPC: G06F3/02 ,  H01H13/83 ,  H01L33/38 ,  H01L33/46

    Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.

    Light emitting device and method of fabricating the same
    18.
    发明授权
    Light emitting device and method of fabricating the same 有权
    发光元件及其制造方法

    公开(公告)号：US09269867B2

    公开(公告)日：2016-02-23

    申请号：US14076626

    申请日：2013-11-11

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ye Seul Kim ,  Shin Hyoung Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Jun Woong Lee ,  Tae Gyun Kim

    IPC: H01L33/32 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

    CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L2933/0016

    Abstract: A light-emitting device according to an exemplary embodiment of the present invention includes a first conductivity-type semiconductor layer disposed on a substrate; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; and an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer. The irregular convex-concave pattern includes convex portions and concave portions, and the convex portions have irregular heights and the concave portions have irregular depths. The first conductivity-type semiconductor layer including the irregular convex-concave pattern is exposed from the active layer and the second conductivity-type semiconductor layer.

    Abstract translation: 根据本发明的示例性实施例的发光器件包括设置在基板上的第一导电型半导体层; 设置在所述第一导电型半导体层上的有源层; 设置在有源层上的第二导电型半导体层; 以及设置在第一导电型半导体层的表面上的不规则的凸凹图案。 不规则的凸凹图案包括凸部和凹部，凸部具有不规则的高度，凹部具有不规则的深度。 包含不规则凸凹图案的第一导电型半导体层从有源层和第二导电型半导体层露出。

    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    19.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 有权
    具有电极板的发光二极管芯片

    公开(公告)号：US20150236210A1

    公开(公告)日：2015-08-20

    申请号：US14630273

    申请日：2015-02-24

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    IPC: H01L33/38 ,  H01L33/42 ,  H01L33/00 ,  H01L33/10

    CPC classification number: H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

    Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer, a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    Abstract translation: 本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠， 位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘，从第一电极焊盘延伸并连接到第一导电类型半导体层的第一电极延伸部，与第二导电类型半导体层电连接的第二电极焊盘 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

    Light emitting diode and light emitting device having the same
    20.
    发明授权
    Light emitting diode and light emitting device having the same 有权

    公开(公告)号：US10923642B2

    公开(公告)日：2021-02-16

    申请号：US16426103

    申请日：2019-05-30

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Sang Won Woo ,  Ye Seul Kim ,  Tae Jun Park ,  Duk Il Suh

    IPC: H01L33/62 ,  H01L33/42 ,  H01L33/38

    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.

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