公开(公告)号：US20160204308A1

公开(公告)日：2016-07-14

申请号：US15074665

申请日：2016-03-18

Applicant: SORAA, INC.

Inventor： THOMAS M. KATONA ,  JAMES W. RARING ,  MARK P. D'EVELYN ,  MICHAEL R. KRAMES ,  AURELIEN J.F. DAVID

IPC: H01L33/20 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

Abstract translation: 发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该装置具有横向尺寸和厚的垂直尺寸，使得几何纵横比形成体积二极管，其在横向尺寸的范围内传递几乎均匀的电流密度。

公开(公告)号：US20150132926A1

公开(公告)日：2015-05-14

申请号：US14599335

申请日：2015-01-16

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  DIRK EHRENTRAUT ,  DERRICK S. KAMBER ,  BRADLEY C. DOWNEY

IPC: C30B7/10 ,  H01L21/02 ,  C30B29/40

CPC classification number: C30B7/105 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B29/406 ,  H01L21/02035 ,  H01L21/02389

Abstract: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

Abstract translation: 使用m-平面或楔形晶种进行大规模制造氮化镓颗粒可以使用氨热生长方法进行。 将大面积单晶种子板悬挂在机架中，与氨和矿化剂一起放置在大直径的高压釜或内部加热的高压装置中，并将水晶进行氨水生长。 选择m平面或楔形晶种的取向以提供有效利用种子板和高压釜或高压装置内的体积。

公开(公告)号：US20140346546A1

公开(公告)日：2014-11-27

申请号：US14301520

申请日：2014-06-11

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  ARPAN CHAKRABORTY ,  WILLIAM D. HOUCK

IPC: H01L33/32 ,  H01L33/50 ,  H01L33/22

CPC classification number: H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L24/29 ,  H01L24/83 ,  H01L29/02 ,  H01L29/0692 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

Abstract translation: 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。