公开(公告)号：US20160276550A1

公开(公告)日：2016-09-22

申请号：US15077387

申请日：2016-03-22

Applicant: SORAA, INC.

Inventor： AURELIEN J. F. DAVID ,  ARPAN CHAKRABORTY ,  MICHAEL RAGAN KRAMES ,  TROY TROTTIER

IPC: H01L33/50 ,  H01L33/08 ,  H01L33/32 ,  H01L33/48

CPC classification number: H01L33/504 ,  C09K11/0883 ,  C09K11/565 ,  C09K11/7721 ,  C09K11/7734 ,  C09K11/7739 ,  C09K11/7774 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/32 ,  H01L33/486 ,  H01L33/50 ,  H01L33/54 ,  H01L2924/0002 ,  Y02B20/181 ,  H01L2924/00

Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract translation: 描述了具有多种荧光体的LED泵浦光。 用紫外线和/或紫外线波长发射辐射的LED用于泵浦发射其它颜色的荧光体材料。 布置在不同波长范围内的LED，以减少光吸收并提高光输出效率。

公开(公告)号：US20140346546A1

公开(公告)日：2014-11-27

申请号：US14301520

申请日：2014-06-11

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  ARPAN CHAKRABORTY ,  WILLIAM D. HOUCK

IPC: H01L33/32 ,  H01L33/50 ,  H01L33/22

CPC classification number: H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L24/29 ,  H01L24/83 ,  H01L29/02 ,  H01L29/0692 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

Abstract translation: 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。

公开(公告)号：US20160377262A1

公开(公告)日：2016-12-29

申请号：US15261351

申请日：2016-09-09

Applicant: SORAA, INC.

Inventor： MICHAEL R. KRAMES ,  TROY TROTTIER ,  FRANK M. STERANKA ,  WILLIAM D. HOUCK ,  ARPAN CHAKRABORTY

IPC: F21V9/08 ,  F21K9/235 ,  F21V19/00 ,  F21V3/00 ,  H05B33/08 ,  F21V23/06 ,  H01L25/075 ,  H01L33/60 ,  H01L33/56 ,  H01L33/50 ,  F21V29/74 ,  F21V7/00

CPC classification number: F21V9/08 ,  F21K9/00 ,  F21K9/232 ,  F21K9/233 ,  F21K9/235 ,  F21K9/60 ,  F21V3/00 ,  F21V7/00 ,  F21V19/006 ,  F21V23/06 ,  F21V29/70 ,  F21V29/74 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L33/60 ,  H01L2924/0002 ,  H05B33/0845 ,  H01L2924/00

Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

Abstract translation: 光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。 实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。 所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。 所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分 第二辐射源。

公开(公告)号：US20160268476A1

公开(公告)日：2016-09-15

申请号：US14992939

申请日：2016-01-11

Applicant: SORAA, INC.

Inventor： ARPAN CHAKRABORTY ,  MICHAEL GRUNDMANN ,  ANURAG TYAGI

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the in-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Abstract translation: 一种在Ga面c面（Al，Ga，In）N基板上使用具有大于至少0.35度朝向正方向的晶体面的c面表面提供（Al，Ga，In）N薄膜的方法。 发光器件形成在光滑（Al，Ga，In）N薄膜上。 在光滑表面上制造的器件表现出改进的性能。

公开(公告)号：US20140175377A1

公开(公告)日：2014-06-26

申请号：US14191950

申请日：2014-02-27

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  ARPAN CHAKRABORTY

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/04

CPC classification number: H01L33/50 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。