公开(公告)号：US10043946B2

公开(公告)日：2018-08-07

申请号：US15226656

申请日：2016-08-02

Applicant: SORAA, INC.

Inventor： Rafael Aldaz ,  Aurelien J. F. David ,  Daniel F. Feezell ,  Thomas M. Katona ,  Rajat Sharma ,  Michael J. Cich

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/20

Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

公开(公告)号：US20180053878A1

公开(公告)日：2018-02-22

申请号：US15785950

申请日：2017-10-17

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J.F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/60 ,  H01L33/20 ,  H01L33/62 ,  H01L33/16 ,  H01L33/48 ,  H01L33/40

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US09831388B2

公开(公告)日：2017-11-28

申请号：US15418268

申请日：2017-01-27

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H05B37/02 ,  H01L29/22 ,  H01L33/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/40 ,  H01L33/60 ,  H01L33/62 ,  H01L33/48

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US09419189B1

公开(公告)日：2016-08-16

申请号：US14528818

申请日：2014-10-30

Applicant: SORAA, INC.

Inventor： Aurelien J. F. David ,  Rafael Aldaz ,  Michael Ragan Krames ,  Frank M. Steranka ,  Kevin Huang ,  Troy Trottier

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/46

CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/46

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

Abstract translation: 公开了具有高亮度和高效率的小型LED源，包括小型LED源和使用小型LED源的方法。

公开(公告)号：US09406843B2

公开(公告)日：2016-08-02

申请号：US14632755

申请日：2015-02-26

Applicant: SORAA, INC.

Inventor： Rafael Aldaz ,  Aurelien J. F. David ,  Daniel F. Feezell ,  Thomas M. Katona ,  Rajat Sharma

IPC: H01L33/22 ,  H01L33/20 ,  H01L33/58 ,  H01L33/32 ,  H01L33/00 ,  H01L33/18

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/18 ,  H01L33/32 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0083

Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。