Fluoride phosphor, method of manufacturing the same, and light emitting device

    公开(公告)号:US10781368B2

    公开(公告)日:2020-09-22

    申请号:US16400325

    申请日:2019-05-01

    Abstract: A fluoride phosphor includes fluoride particles represented by AxMFy:Mnz4+ where A is at least one selected from lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and cesium (Cs), M is at least one selected from silicon (Si), titanium (Ti), zirconium (Zr), hafnium (Hf), germanium (Ge) and tin (Sn), a compositional ratio x of A satisfies 2≤x≤3, and a compositional ratio y of F satisfies 4≤y≤7; and an organic material physically adsorbed onto surfaces of the fluoride particles to allow the fluoride particles to have hydrophobicity. The fluoride particles have a concentration of Mn4+ gradually reduced from respective centers to respective surfaces of the fluoride particles.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    15.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20130214312A1

    公开(公告)日:2013-08-22

    申请号:US13769132

    申请日:2013-02-15

    CPC classification number: H01L33/50 H01L33/507 H01L2933/0041

    Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.

    Abstract translation: 一种制造半导体发光器件的方法,包括在半导体发光元件的表面上形成导电膜。 通过将荧光体颗粒与溶解有金属盐的电解质混合来加入荧光体颗粒。 将其上形成有导电膜的半导体发光元件浸入具有带电荧光体颗粒的电解质中。 通过电泳荧光体颗粒来形成导电膜上的荧光体层。 使用湿蚀刻去除导电膜。

    Semiconductor light emitting device package
    19.
    发明授权
    Semiconductor light emitting device package 有权
    半导体发光器件封装

    公开(公告)号:US09537060B2

    公开(公告)日:2017-01-03

    申请号:US14154902

    申请日:2014-01-14

    Abstract: A semiconductor light emitting device package includes: a light emitting device; a wavelength conversion unit formed in a path of light emitted from the light emitting device and including a mixture of a wavelength conversion material and a glass material; and a reflective film disposed on an upper surface of the wavelength conversion unit and reflecting a partial amount of light emitted from the light emitting device and allowing a partial amount of light emitted from the light emitting device to be transmitted therethrough.

    Abstract translation: 一种半导体发光器件封装,包括:发光器件; 波长转换单元,其形成在从所述发光器件发射的光的路径中,并且包括波长转换材料和玻璃材料的混合物; 以及反射膜,其设置在所述波长转换单元的上表面上,并且反射从所述发光器件发射的部分光量,并允许从所述发光器件发射的部分光量透射通过。

Patent Agency Ranking