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公开(公告)号：US20220028613A1
公开(公告)日：2022-01-27
申请号：US17165300
申请日：2021-02-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taewon JEONG , Hyeon Cheol PARK , Daejin YANG , Doh Won JUNG , Giyoung JO
IPC: H01G4/12 , G11C11/22 , H01L27/11502 , H01L49/02 , C04B35/497
Abstract: Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material: (1−x)KaNabNbO3.xM(AcSbd)O3 [Formula 1] wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0
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12.发明申请公开(公告)号：US20200165142A1
公开(公告)日：2020-05-28
申请号：US16409096
申请日：2019-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doh Won JUNG , Chan KWAK , Euncheol DO , Hyeon Cheol PARK , Daejin YANG , Taewon JEONG , Giyoung JO
Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
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13.发明申请公开(公告)号：US20180359854A1
公开(公告)日：2018-12-13
申请号：US16106938
申请日：2018-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doh Won JUNG , Se Yun KIM , Jong Wook ROH , Jongmin LEE , Sungwoo HWANG , Jinyoung HWANG , Chan KWAK
IPC: H05K1/09 , C09D7/40 , C09D1/00 , C01G55/00 , C09D5/24 , H05K3/28 , H05K1/02 , C08K3/22 , B82Y40/00 , B82Y30/00
CPC classification number: H05K1/09 , B82Y30/00 , B82Y40/00 , C01G55/004 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/24 , C01P2004/61 , C01P2006/40 , C08K3/22 , C09D1/00 , C09D5/24 , C09D7/70 , H05K1/0274 , H05K3/28 , H05K2201/026 , H05K2201/0302 , H05K2201/032 , H05K2201/0326 , H05K2201/0338 , H05K2201/0776 , H05K2201/10977 , Y10S977/755 , Y10S977/896 , Y10S977/932
Abstract: An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers. Also an electronic device including the electrical conductor, and a method of preparing the electrical conductor.
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14.发明申请公开(公告)号：US20180257991A1
公开(公告)日：2018-09-13
申请号：US15908193
申请日：2018-02-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Wook ROH , Daejin YANG , Doh Won JUNG , Chan KWAK , Hyungjun KIM
IPC: C04B35/491 , C04B35/468 , C04B35/47 , C04B35/472 , C01G41/00 , C01G41/02 , C01G29/00 , C01G35/00 , C07C211/63 , C07C211/01
CPC classification number: C04B35/491 , C01G29/00 , C01G29/006 , C01G35/00 , C01G35/006 , C01G41/006 , C01G41/02 , C01P2002/22 , C01P2004/03 , C01P2004/24 , C01P2006/40 , C04B35/4682 , C04B35/47 , C04B35/472 , C04B35/475 , C04B35/495 , C04B2235/3251 , C04B2235/3258 , C04B2235/3298 , C04B2235/5292 , C04B2235/5436 , C04B2235/5445 , C04B2235/85 , C07C211/01 , C07C211/63 , H01C7/008 , H01C7/115 , H01G4/10 , H01G4/1227
Abstract: A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.
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15.发明申请公开(公告)号：US20170135208A1
公开(公告)日：2017-05-11
申请号：US15342308
申请日：2016-11-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Se Yun KIM , Jong Wook ROH , Jongmin LEE , Sungwoo HWANG , Jinyoung HWANG , Chan KWAK
CPC classification number: H05K1/09 , B82Y30/00 , B82Y40/00 , C01G55/004 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/24 , C01P2004/61 , C01P2006/40 , C08K3/22 , C09D1/00 , C09D5/24 , C09D7/70 , H05K1/0274 , H05K3/28 , H05K2201/026 , H05K2201/0302 , H05K2201/032 , H05K2201/0326 , H05K2201/0338 , H05K2201/0776 , H05K2201/10977 , Y10S977/755 , Y10S977/896 , Y10S977/932
Abstract: An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers. Also an electronic device including the electrical conductor, and a method of preparing the electrical conductor.
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Patent Agency Ranking
16.发明申请METHODS OF PREPARING CONDUCTORS, CONDUCTORS PREPARED THEREFROM, AND ELECTRONIC DEVICES INCLUDING THE SAME 审中-公开制备导体的方法，制备的导体和包括其的电子器件公开(公告)号：US20170040089A1
公开(公告)日：2017-02-09
申请号：US15215825
申请日：2016-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jongmin LEE , Se Yun KIM , Jong Wook ROH , Doh Won JUNG , Sungwoo HWANG , Chan KWAK
CPC classification number: H01L51/5203 , H01B1/08 , H01L51/442 , H05K3/00 , Y02E10/549
Abstract: A method of preparing a conductor including a first conductive layer including a plurality of metal oxide nanosheets, the method including: preparing a coating liquid including a plurality of metal oxide nanosheets, wherein an intercalant is attached to a surface of the nanosheets, applying the coating liquid to a substrate to provide a first conductive layer including a plurality of metal oxide nanosheets, and performing a surface treatment on the first conductive layer to remove at least a portion of the intercalant.
Abstract translation: 一种制备导体的方法，所述导体包括包括多个金属氧化物纳米片的第一导电层，所述方法包括：制备包括多个金属氧化物纳米片的涂布液，其中插入剂附着在所述纳米片的表面上，涂覆所述涂层 液体提供到衬底以提供包括多个金属氧化物纳米片的第一导电层，并且在第一导电层上进行表面处理以去除至少一部分插入剂。
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公开(公告)号：US20150376020A1
公开(公告)日：2015-12-31
申请号：US14558931
申请日：2014-12-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Hee Jung PARK , Yoon Chul SON , Woojin LEE , Sang Il KIM , Jae-Young CHOI
IPC: C01B35/04
CPC classification number: C01B35/04 , C01P2004/24 , C01P2006/40 , C01P2006/60 , H01B1/06
Abstract: An electrically conductive thin film includes a compound represented by Chemical Formula 1 and having a layered crystal structure: MeB2 Chemical Formula 1 wherein, Me is Au, Al, Ag, Mg, Ta, Nb, Y, W, V, Mo, Sc, Cr, Mn, Os, Tc, Ru, Fe, Zr, or Ti.
Abstract translation: 导电薄膜包括由化学式1表示的具有层状晶体结构的化合物：MeB2化学式1其中Me是Au，Al，Ag，Mg，Ta，Nb，Y，W，V，Mo，Sc， Cr，Mn，Os，Tc，Ru，Fe，Zr或Ti。
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公开(公告)号：US20230420729A1
公开(公告)日：2023-12-28
申请号：US18149635
申请日：2023-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gabin YOON , Yan WANG , Samuel CROSS , Mahdi AMACHRAA , Hyeokjo GWON , Doh Won JUNG
IPC: H01M10/0562 , H01M10/0585 , C01G25/00
CPC classification number: H01M10/0562 , H01M10/0585 , C01G25/006 , H01M2300/0071 , C01P2006/40 , C01P2002/50 , C01P2002/77
Abstract: A compound represented by Formula 1:
Li4+dH+hSr2−xM1a+xZr1−yM2b+yO6−zXc−z,
wherein in Formula 1, M1 is a cationic dopant in Sr site with a valance of a+; a is 1, 2 or 3; M2 is a cationic dopant in Zr site with a valance of b+; b is 2, 3, 4 or 5; X is an anion dopant in O site with a valence of c−; c is 1, 2, or 3; 0≤h≤2, 0≤x≤2, 0≤y≤1, 0≤z≤0.5, x+y+z+h≥0, d=(2−a)*x+(4−b)*y−(2−c)*z−h, and d≥0.-
19.发明申请公开(公告)号：US20220246353A1
公开(公告)日：2022-08-04
申请号：US17368037
申请日：2021-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol PARK , Daejin YANG , Doh Won JUNG , Taewon JEONG , Giyoung JO
Abstract: Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material: xAB3.(1−x)(BiaNab)TiO3 [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1
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20.发明申请公开(公告)号：US20200266264A1
公开(公告)日：2020-08-20
申请号：US16541883
申请日：2019-08-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyungjun KIM , Doh Won JUNG , Chan KWAK , Ki Hong KIM , Daejin YANG , Chang Soo LEE
IPC: H01L49/02
Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.
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