公开(公告)号：US11004517B2

公开(公告)日：2021-05-11

申请号：US16356182

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjung Lee ,  Chanha Kim ,  Suk-eun Kang ,  Seungkyung Ro ,  Kwangwoo Lee ,  Juwon Lee ,  Jinwook Lee ,  Heewon Lee

IPC: G11C16/04 ,  G11C16/26 ,  G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52 ,  G11C11/56

Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

公开(公告)号：US20200058359A1

公开(公告)日：2020-02-20

申请号：US16356182

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjung Lee ,  Chanha Kim ,  Suk-eun Kang ,  Seungkyung Ro ,  Kwangwoo Lee ,  Juwon Lee ,  Jinwook Lee ,  Heewon Lee

IPC: G11C16/26 ,  G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

公开(公告)号：US10127984B2

公开(公告)日：2018-11-13

申请号：US15245164

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkwon Moon ,  Heewon Lee ,  Seongjun Ahn

IPC: G11C16/04 ,  G06F3/06 ,  G06F12/00

Abstract: Embodiments include a method of operating a storage device including a flash memory, comprising: calculating a reuse period of a selected memory block in the flash memory; determining a set of wordlines of the selected memory block for writing data based on the reuse period of the selected memory block; and writing the data into the set of wordlines.

公开(公告)号：US12002519B2

公开(公告)日：2024-06-04

申请号：US17534989

申请日：2021-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin Yoo ,  Yunjung Lee ,  Heewon Lee ,  Kwangwoo Lee

IPC: G11C16/26 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C16/3495 ,  G11C16/0483

Abstract: Disclosed is an operation method of a controller which is configured to control a nonvolatile memory device. The method includes receiving cell counting data associated with selected memory cells included in the nonvolatile memory device from the nonvolatile memory device, adjusting operation parameters of the nonvolatile memory device based on the cell counting data, performing a valley search operation for the selected memory cells based on the adjusted operation parameters, and performing a read operation for the selected memory cells based on a result of the valley search operation.

公开(公告)号：US20240078018A1

公开(公告)日：2024-03-07

申请号：US18127133

申请日：2023-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Lee ,  Woohyun Kang ,  Youngjoo Seo ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim ,  Jin Gu Jeong

IPC: G06F3/06

CPC classification number: G06F3/0614 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

Abstract: Disclosed is a method of operating a storage device which includes a storage controller and a non-volatile memory device. The method includes providing a first request indicating a word line sequential read operation of a target memory block of the non-volatile memory device, providing first word line read data corresponding to memory cells of a first word line of the target memory block based on the first request, providing second word line read data corresponding to memory cells of a second word line of the target memory block based on the first request, the second word line being adjacent to the first word line, calculating a first word line gap value based on the first word line read data and the second word line read data, and performing a first reliability operation of the target memory block based on the first word line gap value.

公开(公告)号：US20210057025A1

公开(公告)日：2021-02-25

申请号：US16838078

申请日：2020-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunjung Lee ,  Chanha Kim ,  Kangho Roh ,  Heewon Lee

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US10424388B2

公开(公告)日：2019-09-24

申请号：US15615849

申请日：2017-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo Oh ,  Seungkyung Ro ,  Heewon Lee ,  Seongnam Kwon ,  Oak-Ha Kim ,  Donggi Lee

IPC: G11C29/00 ,  G11C16/34 ,  G06N20/00 ,  G11C29/04 ,  G11C29/52 ,  G11C7/14 ,  G11C11/56 ,  G11C16/26 ,  G11C29/02 ,  G11C29/42 ,  G11C16/04

Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.

公开(公告)号：US09128623B2

公开(公告)日：2015-09-08

申请号：US14660897

申请日：2015-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kui-Yon Mun ,  Heewon Lee

IPC: G06F12/00 ,  G06F3/06 ,  G11C16/10 ,  G11C29/52 ,  G11C16/34

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0688 ,  G11C16/10 ,  G11C16/30 ,  G11C16/3418 ,  G11C16/349 ,  G11C29/52

Abstract: Random sequence data is sequentially generated based on a seed assigned to a selected memory space, and one of access-requested segments of the selected memory space is logically combined with the sequentially generated random sequence data to transfer the access-requested segment. The sequentially generating and the logically combining are iteratively performed until remaining access-requested segments all transferred.

公开(公告)号：US12242746B2

公开(公告)日：2025-03-04

申请号：US18196788

申请日：2023-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin Yoo ,  Kwangwoo Lee ,  Heewon Lee ,  Byungchan Park ,  Hyojin Ahn ,  Dongcheul Jang

IPC: G06F3/06

Abstract: There is provided a storage device, which includes: a memory device that includes a plurality of memory blocks, and stores first meta data including first status data and a first parameter in a first memory block among the plurality of memory blocks; and a memory controller that stores second meta data including second status data and second parameters, determines final meta data among a plurality of pieces of meta data including the first meta data and the second status data by comparing a plurality of pieces of status data with the first status data and the second status data, performs parameter confirmation for storing the final meta data in the meta block, and controls the memory device based on a parameter stored in the meta block.

公开(公告)号：US20240177764A1

公开(公告)日：2024-05-30

申请号：US18223783

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Chang Jeon ,  Woohyun Kang ,  Seungkyung Ro ,  Sangkwon Moon ,  Heewon Lee

IPC: G11C11/408 ,  G06F3/06

CPC classification number: G11C11/4085 ,  G06F3/0614 ,  G06F3/0658 ,  G06F3/0659 ,  G06F3/0679 ,  G11C11/4087

Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.