公开(公告)号：US10700164B2

公开(公告)日：2020-06-30

申请号：US16274350

申请日：2019-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Nam Kim ,  Rak-Hwan Kim ,  Byung-Hee Kim ,  Jong-Min Baek ,  Sang-Hoon Ahn ,  Nae-In Lee ,  Jong-Jin Lee ,  Ho-Yun Jeon ,  Eun-Ji Jung

IPC: H01L29/08 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L27/088 ,  H01L27/12

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

公开(公告)号：US20180158730A1

公开(公告)日：2018-06-07

申请号：US15805865

申请日：2017-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Yun Jeon ,  Rak-Hwan Kim ,  Byung-Hee Kim ,  Kyoung-Hee Nam ,  Jong-Jin Lee ,  Jae-Won Hwang

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L21/76865 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/2885 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238

Abstract: A semiconductor device includes an insulating interlayer disposed on a substrate, a first protection pattern, a first barrier pattern, a first adhesion pattern, and a first conductive pattern. The insulating interlayer includes a via hole and a first trench, The via hole extends through a lower portion of the insulating interlayer. The first trench is connected to the via hole and extends through an upper portion of the insulating interlayer, The first protection pattern covers a lower surface and sidewalls of the via hole and a portion of a lower surface and a lower sidewall of the first trench, and includes a conductive material. The first barrier pattern covers the protection pattern and an upper sidewall of the first trench. The first adhesion pattern covers the first barrier pattern. The first conductive pattern is disposed on the first adhesion pattern, and fills the via hale and the first trench.

公开(公告)号：US20170294337A1

公开(公告)日：2017-10-12

申请号：US15632884

申请日：2017-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Nam KIM ,  Rak-Hwan Kim ,  Byung-Hee Kim ,  Jong-Min Baek ,  Sang-Hoon Ahn ,  Nae-In Lee ,  Jong-Jin Lee ,  Ho-Yun Jeon ,  Eun-Ji Jung

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L29/0847 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76852 ,  H01L21/76862 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L27/0886 ,  H01L27/1211

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

公开(公告)号：US09645934B2

公开(公告)日：2017-05-09

申请号：US14462774

申请日：2014-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Hong ,  Sim Ji Lee ,  JaeYoung Hur ,  JiWoong Kwon ,  Il Park ,  Jong-Jin Lee ,  Jinyong Jung

IPC: G06F12/10 ,  G06F12/08 ,  G06F12/0862 ,  G06F12/1009 ,  G06F12/1027

CPC classification number: G06F12/0862 ,  G06F12/1009 ,  G06F12/1027 ,  G06F2212/507 ,  G06F2212/6022 ,  G06F2212/654 ,  G06F2212/68 ,  G06F2212/681

Abstract: A page descriptor can be stored in advance in a memory management unit under various conditions so that an address translation overhead can be reduced. The memory management unit comprises an address translation unit that receives a memory access request as a virtual address and translates the virtual address to a physical address. A translation lookaside buffer (TLB) stores page descriptors of a plurality of physical addresses, the address translation unit determining whether a page descriptor corresponding to a received virtual address is present in the translation lookaside buffer. A prefetch buffer stores page descriptors of the plurality of physical addresses. The address translation unit, in the event the page descriptor corresponding to the received virtual address is not present in the translation lookaside buffer, further determines whether the page descriptor corresponding to the received virtual address is present in the prefetch buffer; updates the translation lookaside buffer with the page descriptor corresponding to the received virtual address; and performs a translation of the virtual address to a physical address using the page descriptor corresponding to the received virtual address. The prefetch buffer may include sub-prefetch buffers, and may be updated based on access direction information.

公开(公告)号：US20160300792A1

公开(公告)日：2016-10-13

申请号：US15059438

申请日：2016-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Nam KIM ,  Rak-Hwan Kim ,  Byung-Hee Kim ,  Jong-Min Baek ,  Sang-Hoon Ahn ,  Nae-In Lee ,  Jong-Jin Lee ,  Ho-Yun Jeon ,  Eun-Ji Jung

IPC: H01L23/528 ,  H01L29/78 ,  H01L29/08 ,  H01L29/51 ,  H01L29/16 ,  H01L29/161 ,  H01L23/532 ,  H01L29/06

CPC classification number: H01L29/0847 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76852 ,  H01L21/76862 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L27/0886 ,  H01L27/1211

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract translation: 半导体器件可以包括扩散防止绝缘图案，多个导电图案，阻挡层和绝缘中间层。 扩散防止绝缘图案可以形成在基板上，并且可以包括从其向上突出的多个突起。 每个导电图案可以形成在防扩散绝缘图案的每个突起上，并且可以具有相对于基板的顶表面倾斜约80度至约135度范围内的角度的侧壁。 如果导电图案，阻挡层可以覆盖每个的顶表面和侧壁。 绝缘中间层可以形成在防扩散绝缘图案和阻挡层上，并且可以在相邻的导电图案之间具有气隙。

公开(公告)号：US11700519B2

公开(公告)日：2023-07-11

申请号：US17836191

申请日：2022-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Young Choi ,  Dong Yun Kim ,  Ivan Galkin ,  Ji-Hoon Park ,  Jong-Jin Lee

IPC: H04W4/70 ,  H04W4/80 ,  H04L67/125 ,  H04W76/28 ,  G06F9/445

CPC classification number: H04W4/70 ,  G06F9/44573 ,  H04L67/125 ,  H04W4/80 ,  H04W76/28

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

公开(公告)号：US20170358519A1

公开(公告)日：2017-12-14

申请号：US15669280

申请日：2017-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Nam Kim ,  Tsukasa Matsuda ,  Rak-Hwan Kim ,  Byung-Hee Kim ,  Nae-In Lee ,  Jong-Jin Lee

IPC: H01L23/485 ,  H01L23/498 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L23/485 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76882 ,  H01L23/49822 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom suffice of the first trench.