公开(公告)号：US11916123B2

公开(公告)日：2024-02-27

申请号：US17383022

申请日：2021-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Dae Cho ,  Ki Hwan Kim ,  Sung Uk Jang ,  Su Jin Jung

IPC: H01L29/423 ,  H01L29/08 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/0847 ,  H01L29/78696

Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

公开(公告)号：US11901453B2

公开(公告)日：2024-02-13

申请号：US17587402

申请日：2022-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Uk Jang ,  Ki Hwan Kim ,  Su Jin Jung ,  Bong Soo Kim ,  Young Dae Cho

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/7848 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02636 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/78618 ,  H01L29/78696

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

公开(公告)号：US20190319127A1

公开(公告)日：2019-10-17

申请号：US16450193

申请日：2019-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC: H01L29/78 ,  H01L27/11 ,  H01L29/16 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/66 ,  H01L23/535

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10411131B2

公开(公告)日：2019-09-10

申请号：US16111854

申请日：2018-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC: H01L29/78 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/092 ,  H01L27/11 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10090413B2

公开(公告)日：2018-10-02

申请号：US15288080

申请日：2016-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC: H01L29/78 ,  H01L29/16 ,  H01L23/535 ,  H01L27/11 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10083965B2

公开(公告)日：2018-09-25

申请号：US15850183

申请日：2017-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gi Gwan Park ,  Jung Gun You ,  Dong Suk Shin ,  Hyun Yul Choi

IPC: H01L27/00 ,  H01L27/092 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/167 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: The semiconductor device includes a substrate comprising first and second regions, in the first region, first and second gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a first distance, in the second region, third and fourth gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a second distance which is greater than the first distance, in the first region, a first recess formed on the substrate between the first and second gate electrodes, in the second region, a second recess formed on the substrate between the third and fourth gate electrodes, a first epitaxial source/drain filling the first recess and a second epitaxial source/drain filling the second recess, wherein an uppermost portion of an upper surface of the first epitaxial source/drain is higher than an uppermost portion of an upper surface of the second epitaxial source/drain.

公开(公告)号：US09871042B2

公开(公告)日：2018-01-16

申请号：US15368723

申请日：2016-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gi Gwan Park ,  Jung Gun You ,  Dong Suk Shin ,  Hyun Yul Choi

IPC: H01L27/00 ,  H01L27/092 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L27/02 ,  H01L29/167 ,  H01L29/165 ,  H01L29/06 ,  H01L29/45 ,  H01L27/088 ,  H01L27/12 ,  H01L21/84

CPC classification number: H01L27/0924 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising first and second regions, in the first region, first and second gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a first distance, in the second region, third and fourth gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a second distance which is greater than the first distance, in the first region, a first recess formed on the substrate between the first and second gate electrodes, in the second region, a second recess formed on the substrate between the third and fourth gate electrodes, a first epitaxial source/drain filling the first recess and a second epitaxial source/drain filling the second recess, wherein an uppermost portion of an upper surface of the first epitaxial source/drain is higher than an uppermost portion of an upper surface of the second epitaxial source/drain.

公开(公告)号：US12132113B2

公开(公告)日：2024-10-29

申请号：US18204469

申请日：2023-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Uk Jang ,  Young Dae Cho ,  Ki Hwan Kim ,  Su Jin Jung

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/7851 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/78696

Abstract: A semiconductor device and a method for making a semiconductor device. The semiconductor device includes an active region on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers and including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically.

公开(公告)号：US11239363B2

公开(公告)日：2022-02-01

申请号：US16598012

申请日：2019-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Uk Jang ,  Ki Hwan Kim ,  Su Jin Jung ,  Bong Soo Kim ,  Young Dae Cho

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/24

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

公开(公告)号：US11177346B2

公开(公告)日：2021-11-16

申请号：US16666958

申请日：2019-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Sunguk Jang ,  Pankwi Park ,  Sangmoon Lee ,  Sujin Jung

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device including an active fin that protrudes from a substrate and forms a plurality of recess regions spaced apart from each other, a gate pattern between the plurality of recess regions that covers a lateral surface and a top surface of the active fin, a plurality of source/drain patterns in the plurality of recess regions, and a diffusion reduction region adjacent to each of a plurality of bottoms of the plurality of recess regions and each of a plurality of sidewalls of the plurality of recess regions, the diffusion reduction region including a dopant having a lower diffusion coefficient than phosphorus (P).