Abstract:
A polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry are provided. The polishing slurry includes nano-abrasive particles having a Mohs hardness greater than about 5, and soft particles having a Mohs hardness lower than the Mohs hardness of the nano-abrasive particles, and wherein the nano-abrasive particles and the soft particles have a same sign of zeta potentials as each other in the polishing slurry.
Abstract:
Provided are a composite abrasive, a method of preparing same, polishing slurry including same, and a method of manufacturing a semiconductor device using the polishing slurry, the composite abrasive including a host material and abrasive particles protruding from the surface of the host material. The host material may have a Mohs hardness smaller than a Mohs hardness of the abrasive particles. The host material may have a two-dimensional planar structure and/or a layered structure. A binding force between the host material and the abrasive particles may be greater than or equal to about 200 nN.
Abstract:
A poly(imide-amide) copolymer including a structural unit represented by Chemical Formula 1; a structural unit represented by Chemical Formula 2; and any one of a structural unit represented by Chemical Formula 3, an amic acid precursor of the structural unit represented by Chemical Formula 3, and a combination thererof; wherein a cured material of the poly(imide-amide) copolymer may have a tensile modulus of greater than or equal to about 5.5 GPa, and a yellowness index of less than or equal to about 5: wherein, groups and variables in Chemical Formulae 1 and 3 are the same as described in the specification.
Abstract:
A composition for preparing a polyimide-inorganic particle composite, including a tetracarboxylic acid dianhydride represented by Chemical Formula 1, a diamine represented by Chemical Formula 2, and an inorganic particle having an amino group on its surface: wherein the definitions of groups R1 and R2 in Chemical Formula 1 and Chemical Formula 2 are the same as described in the detailed description.
Abstract:
According to example embodiments, a metallic glass includes aluminum (Al), a first element group, and a second element group. The first element group includes at least one of a transition metal and a rare earth element. The second element group includes at least one of an alkaline metal, an alkaline-earth metal, a semi-metal, and a non-metal. The second element group and aluminum have an electronegativity difference of greater than or equal to about 0.25. The second element group is included less than or equal to about 3 at % of the metallic glass, based on the total amount of the aluminum (Al), the first element group, and the second element group. A conductive paste and/or an electrode of an electronic device may be formed using the metallic glass.
Abstract:
A conductive paste includes a conductive powder, a metallic glass having a glass transition temperature of less than or equal to about 600° C. and a supercooled liquid region of greater than or equal to 0 K, and an organic vehicle, and an electronic device and a solar cell include an electrode formed using the conductive paste.
Abstract:
A luminescent nanostructure, a production method for making the luminescent nanostructure, and an electronic device including the luminescent nanostructure. The luminescent nanostructure includes a semiconductor nanocrystal including a Group 13 metal nitride. The luminescent nanostructure has an aspect ratio of greater than or equal to about 1, and an organic compound having an M-O moiety, wherein M is Ti, Al, Zr, Sn, or Si that is bound to at least a portion of the surface of the luminescent nanostructure.
Abstract:
An ink composition and luminescent nanostructure composite, and an electronic device including the luminescent nanostructure composite. The ink composition includes a plurality of titanium oxide particles, a plurality of luminescent nanostructures (e.g., quantum dots), a monomer including a carbon-carbon unsaturated bond, and optionally an organic solvent. The titanium oxide particles have an average size of greater than or equal to about 10 nm and less than or equal to about 900 nm, and the titanium oxide particles comprise an organosilane compound. The ink composition has a total solid content (TSC) of greater than or equal to about 90 wt %, and an amount of the titanium oxide particles in the ink composition is greater than or equal to about 1 wt % based on the total weight of the ink composition. The ink composition is configured to emit a first light.
Abstract:
A poly(imide-amide) copolymer, which is a product of a reaction between a diamine including an amide structural unit-containing oligomer represented by Chemical Formula 1 and a dianhydride represented by Chemical Formula 3: wherein, groups and variables in Chemical Formulae 1 and 3 are the same as described in the specification.
Abstract:
A composition for preparing an article including a polyimide or poly(imide-amide) copolymer, the composition including (1) a solution including at least one of (i) a polymer including at least one selected from a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2; and (ii) a copolymer including at least one selected from a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, and a structural unit represented by Chemical Formula 3, and (2) a metallic salt soluble in the solution of the polymer and/or the copolymer, wherein the metallic salt is a salt of a metal selected from a Group 1 element, a Group 11 element, a Group 13 element, and a Group 14 element: wherein in Chemical Formulae 1 to 3, A, B, D, and E are the same as defined in the detailed description.