公开(公告)号：US09153692B2

公开(公告)日：2015-10-06

申请号：US14194837

申请日：2014-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Tae-Ouk Kwon ,  Su-Jin Jung ,  Young-Pil Kim ,  Byeong-Chan Lee ,  Bon-Young Koo

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/66545 ,  H01L29/785

Abstract: Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.

Abstract translation: 提供一种半导体器件。 半导体器件在衬底上包括翅片; 栅电极跨越衬底上的翅片; 源极/漏极，形成在栅电极的两侧中的至少一个上，并且包括第一膜和第二膜; 以及布置在基板上的隔离膜和源极/漏极之间并且形成在鳍的侧表面上的应力膜。

公开(公告)号：US11742221B2

公开(公告)日：2023-08-29

申请号：US17376369

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Shin ,  Seok-Hoon Kim ,  Young-Hoo Kim ,  In-Gi Kim ,  Tae-Hong Kim ,  Sung-Hyun Park ,  Jin-Woo Lee ,  Ji-Hoon Cha ,  Yong-Jun Choi

IPC: H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  G02B27/09 ,  B23K26/352 ,  B08B7/00 ,  H01L29/66 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/67034 ,  B08B7/0042 ,  B23K26/352 ,  G02B27/0955 ,  H01J37/3244 ,  H01J37/32568 ,  H01L21/02098 ,  H01J2237/335 ,  H01L29/66545 ,  H01L29/66795 ,  H10B41/27 ,  H10B43/27

Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

公开(公告)号：US10395951B2

公开(公告)日：2019-08-27

申请号：US15442481

申请日：2017-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Kyoung-Seob Kim ,  Dong-Chul Kim ,  Hyo-San Lee

IPC: B08B3/00 ,  H01L21/67 ,  B08B1/04 ,  B08B3/02 ,  B08B3/10

Abstract: In a method of cleaning a substrate, a protecting liquid may be sprayed to a surface of the substrate from a first position in a first spray direction. Cleaning droplets may be injected on to the surface of the substrate. The protecting liquid may be sprayed to the surface of the substrate from a second position different from the first position in a second spray direction. For example, the protecting liquid may be always sprayed from the central portion toward the edge portions in the substrate so that the protecting liquid on the substrate may have a uniform thickness.

公开(公告)号：US20160284703A1

公开(公告)日：2016-09-29

申请号：US15177421

申请日：2016-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

公开(公告)号：US09240461B2

公开(公告)日：2016-01-19

申请号：US13932047

申请日：2013-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Dong-Chan Suh ,  Byeong-Chan Lee

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/764 ,  H01L29/78 ,  H01L29/165 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/6656 ,  H01L21/764 ,  H01L21/7682 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

Abstract: A method for fabricating a semiconductor device comprises forming a dummy gate pattern and a spacer that is arranged on a sidewall of the dummy gate pattern on a substrate, forming an air gap on both sides of the dummy gate pattern by removing the spacer, exposing the substrate by removing the dummy gate pattern, and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.

Abstract translation: 一种半导体器件的制造方法，其特征在于，在基板上形成伪栅极图案和间隔物，该间隔物配置在伪栅极图案的侧壁上，通过去除间隔物，在伪栅极图案的两面形成气隙， 通过去除伪栅极图案，并且在暴露的基板上顺序地形成包括高k绝缘膜和金属栅电极的栅极绝缘膜。

公开(公告)号：US20150234664A1

公开(公告)日：2015-08-20

申请号：US14618124

申请日：2015-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-Eun Kim ,  Chang-Hyo Yu ,  Seok-Hoon Kim ,  Yongha Park ,  Kilwhan Lee

IPC: G06F9/38 ,  G06F12/08 ,  G06F9/30

CPC classification number: G06F9/3834 ,  G06F9/3824 ,  G06F9/3838 ,  G06F9/3851 ,  G06F12/0868 ,  Y02D10/13

Abstract: A multimedia data processing method is provided which includes providing a conflict detection unit at a load/store pipeline unit; generating, by the conflict detection unit, speculative conflict information, which is used to predictively determine whether an address of a load/store instruction of a current thread causes a conflict miss before a cache access operation is performed by performing a history search for load/store instruction addresses of previous threads without referring to a cache memory; and storing information of the current thread directly in a standby buffer without an execution of the cache access operation in response to the generated speculative conflict information indicating the conflict miss.

Abstract translation: 提供了一种多媒体数据处理方法，其包括在加载/存储流水线单元处提供冲突检测单元; 由冲突检测单元产生用于预测性地确定当前线程的加载/存储指令的地址是否在执行高速缓存访​​问操作之前引起冲突未命中的推测性冲突信息，通过执行用于加载/ 存储先前线程的指令地址而不参考高速缓冲存储器; 以及响应于所产生的表示冲突未决的猜测冲突信息，将当前线程的信息直接存储在备用缓冲器中，而不执行高速缓存访​​问操作。