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公开(公告)号：US20240268098A1
公开(公告)日：2024-08-08
申请号：US18510949
申请日：2023-11-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junsoo KIM , Dongsik KONG , Jihye KWON , Junbum LEE , Sungho JANG
CPC classification number: H10B12/315 , H01L29/66666 , H01L29/7827 , H10B12/053 , H10B12/34
Abstract: A semiconductor device includes a first active pattern protruding from a substrate; a gate structure including a gate insulation layer and a gate pattern laterally stacked on a first sidewall of the first active pattern, the gate pattern facing the first sidewall of the first active pattern and extending a first direction parallel to an upper surface of the substrate; and first conductive patterns contacting the gate insulation layer and protruding from a sidewall of the gate structure. The first conductive patterns may be disposed to face second and third sidewalls in the first direction of the first active pattern, and first conductive patterns may be spaced apart from the first active pattern.
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公开(公告)号：US20230186460A1
公开(公告)日：2023-06-15
申请号：US18060830
申请日：2022-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Myungjun LEE , Jinseob KIM , Wookrae KIM , Jinyong KIM , Jaehwang JUNG , Sungho JANG
CPC classification number: G06T7/001 , H04N23/56 , H04N23/10 , H01L27/108
Abstract: A semiconductor measurement device may include an illumination apparatus having a polarizer on a propagation path of light output from a light source; an optical assembly including an objective lens configured to allow light passing through the polarizer to be incident on a sample and a beam splitter configured to transmit light reflected from the sample to first and second sensors; and a controller. The controller may be configured to determine an alignment state of patterns in a first region of the sample using a first original image output by the first sensor and an alignment state of patterns in a second region of the sample using a second original image output by the second sensor. The first sensor includes a first image sensor and a self-interference generator in a path along which light is incident on the first image sensor. The second sensor includes a second image sensor.
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公开(公告)号：US20230114817A1
公开(公告)日：2023-04-13
申请号：US17857291
申请日：2022-07-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Inho SHIN , Wookrae KIM , Changhyeong YOON , Myungjun LEE , Heonju SHIN , Sangil IM , Sungho JANG
Abstract: A semiconductor measurement apparatus includes an illumination unit including a light source, and a polarizer disposed on a propagation path of light emitted from the light source; an optical unit configured to direct the light passing through the polarizer to be incident onto a sample, and to transmit the light, reflected from the sample, to an image sensor; and a controller configured to process an original image, output by the image sensor, to determine a critical dimension of a structure included in a region of the sample on which the light is incident. The controller acquires a two-dimensional image. The controller orthogonally decomposes the two-dimensional image corresponding to a selected wavelength into a plurality of bases, generates one-dimensional data including a plurality of weights corresponding to the plurality of bases, and uses the one-dimensional data to determine a selected critical dimension among critical dimensions of the structure.
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公开(公告)号：US20220076732A1
公开(公告)日：2022-03-10
申请号：US17245334
申请日：2021-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taesung KANG , Youngkyu LEE , Kyoungmin KIM , Ilgweon KIM , Bokyeon WON , Seokjae LEE , Sungho JANG , Joon HAN
IPC: G11C11/4091 , H01L27/108
Abstract: An integrated circuit device includes a sense amplifier configured to sense a voltage change of a bit line, wherein the sense amplifier includes: a sense amplifier unit connected to the bit line and a complementary bit line, configured to sense the voltage change of the bit line in response to a control signal, configured to adjust voltages of a sensing bit line and a complementary sensing bit line based on the sensed voltage change, and including a first PMOS transistor and a first NMOS transistor; and a first offset canceling unit connecting the bit line to the complementary sensing bit line in response to an offset canceling signal, and including a first offset canceling transistor arranged between the first NMOS transistor and the first PMOS transistor, wherein the first offset canceling transistor shares a common impurity region with the first NMOS transistor.
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公开(公告)号：US20210408008A1
公开(公告)日：2021-12-30
申请号：US17471824
申请日：2021-09-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kiseok LEE , Chan-Sic YOON , Augustin HONG , Keunnam KIM , Dongoh KIM , Bong-Soo KIM , Jemin PARK , Hoin LEE , Sungho JANG , Kiwook JUNG , Yoosang HWANG
IPC: H01L27/108 , H01L27/24
Abstract: A method of manufacturing a semiconductor memory device and a semiconductor memory device, the method including providing a substrate that includes a cell array region and a peripheral circuit region; forming a mask pattern that covers the cell array region and exposes the peripheral circuit region; growing a semiconductor layer on the peripheral circuit region exposed by the mask pattern such that the semiconductor layer has a different lattice constant from the substrate; forming a buffer layer that covers the cell array region and exposes the semiconductor layer; forming a conductive layer that covers the buffer layer and the semiconductor layer; and patterning the conductive layer to form conductive lines on the cell array region and to form a gate electrode on the peripheral circuit region.
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Patent Agency Ranking
公开(公告)号：US20240274419A1
公开(公告)日：2024-08-15
申请号：US18529011
申请日：2023-12-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangho LEE , Sangki NAM , Jitae PARK , Seongjin IN , Keonhee LIM , Sungho JANG
IPC: H01J37/32
CPC classification number: H01J37/32972 , H01J37/32926
Abstract: A plasma monitoring system includes a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage, a light transmitter on the view window and including optical fibers configured to obtain a first light generated during the plasma process, a detachable reflection mirror between the view window and the optical fibers, a light generator configured to irradiate a second light onto the reflection mirror through the optical fibers and to irradiate a third light onto the view window through the optical fibers, and a light analyzer configured to obtain a light spectrum from the first light, to correct the light spectrum based on the second light reflected from the reflection mirror, and to correct the light spectrum based on the third light reflected from the view window.
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公开(公告)号：US20240268105A1
公开(公告)日：2024-08-08
申请号：US18391804
申请日：2023-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seunghwan KIM , Sungho JANG , Jiseok KWON , Haein JUNG , Seungho HONG
IPC: H10B12/00
CPC classification number: H10B12/50 , H10B12/315
Abstract: A semiconductor device includes: a substrate including a cell region and a peripheral circuit region; an active region; a cell word line extending across the active region in a first horizontal direction within the cell region; a cell bit line extending in a second horizontal crossing the first horizontal direction in the cell region; a peripheral circuit gate structure extending in the second horizontal direction on the substrate; a peripheral circuit spacer structure disposed on a sidewall of the peripheral circuit gate structure; a peripheral circuit etch stop layer disposed on the substrate, and separated from the peripheral circuit gate structure and the peripheral circuit spacer structure; and a peripheral circuit contact connected to the substrate by penetrating the peripheral circuit etch stop layer. The peripheral circuit etch stop layer has an end portion positioned between the peripheral circuit contact and the peripheral circuit spacer structure.
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公开(公告)号：US20240230314A9
公开(公告)日：2024-07-11
申请号：US18317395
申请日：2023-05-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Garam CHOI , Wookrae KIM , Jinseob KIM , Jinyong KIM , Sungho JANG , Younguk JIN , Daehoon HAN
IPC: G01B9/02 , G01B9/02097
CPC classification number: G01B9/02044 , G01B9/02097 , G01B2210/56 , G01B2290/70
Abstract: A semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. The control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. The illumination unit and/or the optical unit may include a polarizer and a compensator having a ¼ wave plate.
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公开(公告)号：US20240133673A1
公开(公告)日：2024-04-25
申请号：US18317395
申请日：2023-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Garam CHOI , Wookrae KIM , Jinseob KIM , Jinyong KIM , Sungho JANG , Younguk JIN , Daehoon HAN
IPC: G01B9/02 , G01B9/02097
CPC classification number: G01B9/02044 , G01B9/02097 , G01B2210/56 , G01B2290/70
Abstract: A semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. The control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. The illumination unit and/or the optical unit may include a polarizer and a compensator having a ¼ wave plate.
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公开(公告)号：US20240047247A1
公开(公告)日：2024-02-08
申请号：US18184418
申请日：2023-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chansoo KANG , Daewon KANG , Sangki NAM , Jungmo YANG , Changsoon LIM , Sungho JANG , Jonghun PI , Youngil KANG , Yoonjae KIM , Ilwoo KIM , Jongmu KIM , Yongbeom PARK
CPC classification number: H01L21/67253 , H01J37/32944 , H01J2237/221
Abstract: A semiconductor process device includes a chamber housing defining an internal region and a plurality of electrostatic chucks within the internal region. The chamber housing includes a window, and a light collection unit including a first optical system and a second optical system located at different positions on the window. A plurality of first optical pickup units are connected to the first optical system, and a plurality of second optical pickup units are connected to the second optical system. A sensor includes a plurality of photodetectors that are configured to convert a first optical signal transmitted by the plurality of first optical pickup units and a second optical signal transmitted by the plurality of second optical pickup units into electrical signals. A processor is configured to generate a spatial image of the internal region of the chamber housing using the electrical signals output by the plurality of photodetectors, and determine a location at which an arc occurs in the internal region of the chamber housing based on the spatial image.
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