公开(公告)号：US20230042262A1

公开(公告)日：2023-02-09

申请号：US17522197

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo CHOI ,  Bonwon KOO ,  Yongyoung PARK ,  Hajun SUNG ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

Abstract: Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.

公开(公告)号：US20220406842A1

公开(公告)日：2022-12-22

申请号：US17523363

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Bonwon KOO ,  Segab KWON ,  Yongyoung PARK ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L27/24 ,  H01L27/22 ,  C01B19/00

Abstract: Provided are a chalcogenide material, and a device and a memory device each including the same. The chalcogenide material may include: germanium (Ge) as a first component; arsenic (As) as a second component; at least one element selected from selenium (Se) and tellurium (Te) as a third component; and at least one element selected from the elements of Groups 2, 16, and 17 of the periodic table as a fourth component, wherein a content of the first component may be from 5 at % to 30 at %, a content of the second component may be from 20 at % to 40 at %, a content of the third component may be from 25 at % to 75 at %, and a content of the fourth component may be from 0.5 at % to 5 at %.

公开(公告)号：US20220140003A1

公开(公告)日：2022-05-05

申请号：US17244212

申请日：2021-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung YANG ,  Bonwon KOO ,  Chungman KIM ,  Kwangmin PARK ,  Hajun SUNG ,  Dongho AHN ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L27/24 ,  H01L27/22 ,  H01L45/00 ,  H01L43/02 ,  H01L43/12

Abstract: A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

公开(公告)号：US20190326555A1

公开(公告)日：2019-10-24

申请号：US16268805

申请日：2019-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung YANG ,  Wenxu XIANYU ,  Yongsung KIM ,  Changseung LEE

IPC: H01L51/52 ,  H01L51/10 ,  C23C16/50 ,  C23C16/455

Abstract: Provided are a flexible organic-inorganic passivation film and a method of forming the same. The flexible organic-inorganic passivation film includes an organic-inorganic passivation film formed by alternately and repeatedly forming an organic film and an inorganic film on a substrate. The organic film is formed by stacking plasma-process generated material on a material layer thereunder. The plasma-process generated material is formed by plasma processing a hydrocarbon or a fluorocarbon.

公开(公告)号：US20190214674A1

公开(公告)日：2019-07-11

申请号：US16049888

申请日：2018-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungjin LIM ,  Huisu JEONG ,  Kyounghwan KIM ,  Hwiyeol PARK ,  Jeongkuk SHON ,  Wooyoung YANG ,  Jaemyung LEE ,  Junhyeong LEE ,  Jin S. HEO

IPC: H01M10/058

CPC classification number: H01M10/058 ,  H01M2/1686 ,  H01M2/18 ,  H01M10/0454 ,  H01M10/0562 ,  H01M10/0583 ,  H01M2004/021 ,  H01M2004/025 ,  H01M2004/028

Abstract: An electrochemical device including: a positive electrode current collector; a plurality of positive electrodes disposed on the positive electrode current collector; an electrolyte layer disposed on the plurality of positive electrodes; a negative electrode disposed on the electrolyte layer; and a negative electrode current collector disposed on the negative electrode, wherein the electrolyte layer includes a first electrolyte layer and a second electrolyte layer, and wherein the second electrolyte layer is between the first electrolyte layer and the negative electrode.

公开(公告)号：US20180010245A1

公开(公告)日：2018-01-11

申请号：US15368892

申请日：2016-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho LEE ,  Yongsung KIM ,  Sanghoon SONG ,  Wooyoung YANG ,  Changseung LEE ,  Sungjin LIM ,  Junsik HWANG

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/06 ,  H01M4/04 ,  C23C16/44

CPC classification number: C23C16/34 ,  C23C16/045 ,  C23C16/06 ,  C23C16/308 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/515 ,  H01J37/32 ,  H01J37/3244 ,  H01J2237/3321 ,  H01M4/0428 ,  H01M4/13 ,  H01M10/052 ,  H01M2220/30 ,  H01M2300/0068

Abstract: A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.