WORD LINE DRIVER CIRCUITS FOR MEMORY DEVICES AND METHODS OF OPERATING SAME

    公开(公告)号:US20210225425A1

    公开(公告)日:2021-07-22

    申请号:US17038488

    申请日:2020-09-30

    Abstract: A memory device includes a word line driver circuit, which can advantageously reduce gate stress on a transistor using a lower high voltage that varies with a command, and an operating method of the memory device. The memory device includes a plurality of memory blocks, provides a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal, and changes a level of the lower high voltage to a low voltage level, a medium voltage level, or a high voltage level based on the command. The memory device applies the lower high voltage to gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives word lines of non-selected memory blocks among the plurality of memory blocks.

    MAGAZINE FOR LOADING A LEAD FRAME
    12.
    发明申请
    MAGAZINE FOR LOADING A LEAD FRAME 有权
    用于装载引导框架的杂志

    公开(公告)号:US20130256186A1

    公开(公告)日:2013-10-03

    申请号:US13783657

    申请日:2013-03-04

    CPC classification number: H01L21/6735 H01L21/6732

    Abstract: A strip member loading magazine, which may load strip members such as semiconductor integrated circuit lead frames, for example, may include a bottom plate, a plurality of first slot plates provided at opposite sides of the bottom plate, a top plate fixed to a top portion of the first slot plates to be parallel to the bottom plate, second slot plates disposed to face each other between the first slot plates and be able to be moved, and locking units fastening the second slot plates to at least the top or bottom plate, the second slot plates being fastened parallel to the first slot plates.

    Abstract translation: 例如,可以装载诸如半导体集成电路引线框架的条状部件的条形部件装载仓可以包括底板,设置在底板的相对侧的多个第一狭槽板,固定到顶部的顶板 所述第一狭槽板的一部分平行于所述底板,所述第二狭槽板设置成在所述第一狭槽板之间彼此面对并且能够移动;以及锁定单元,其将所述第二狭槽板紧固到至少所述顶板或底板 第二槽板平行于第一槽板固定。

    Word line driver circuits for memory devices and methods of operating same

    公开(公告)号:US11450376B2

    公开(公告)日:2022-09-20

    申请号:US17038488

    申请日:2020-09-30

    Abstract: A memory device includes a word line driver circuit, which can advantageously reduce gate stress on a transistor using a lower high voltage that varies with a command, and an operating method of the memory device. The memory device includes a plurality of memory blocks, provides a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal, and changes a level of the lower high voltage to a low voltage level, a medium voltage level, or a high voltage level based on the command. The memory device applies the lower high voltage to gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives word lines of non-selected memory blocks among the plurality of memory blocks.

    Antenna including conductive pattern and electronic device including the same

    公开(公告)号:US11114747B2

    公开(公告)日:2021-09-07

    申请号:US16441376

    申请日:2019-06-14

    Abstract: An electronic device is provided. The electronic device includes a housing including a first plate, a second plate facing away from the first plate, and a side member surrounding a space between the first plate and the second plate, a first PCB disposed in parallel with the first plate in the space between the first plate and the second plate, and including a first face facing the first plate and a second face facing the second plate, at least one conductive plate formed on the second face, a first conductive pattern embedded in the first PCB and disposed to be closer to a portion of the side member than the conductive plate when viewed from above the first plate, a first wireless communication circuit mounted on a first face of the first PCB, electrically coupled to the conductive plate and the first conductive pattern.

    TECHNIQUES TO REDUCE READ-MODIFY-WRITE OVERHEAD IN HYBRID DRAM/NAND MEMORY

    公开(公告)号:US20180293175A1

    公开(公告)日:2018-10-11

    申请号:US15662072

    申请日:2017-07-27

    Abstract: A method of choosing a cache line of a plurality of cache lines of data for eviction from a frontend memory, the method including assigning a baseline replacement score to each way of a plurality of ways of a cache, the ways respectively storing the cache lines, assigning a validity score to each way based on a degree of validity of the cache line stored in each way, assigning an eviction decision score to each way based on a function of the baseline replacement score for the way and the validity score for the way, and choosing a cache line of the way having a highest eviction decision score as the cache line for eviction.

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