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218 条记录 (耗时 0.03 秒)

    Plasma confinement ring assemblies having reduced polymer deposition characteristics
    12.
    发明申请
    Plasma confinement ring assemblies having reduced polymer deposition characteristics 有权
    具有降低的聚合物沉积特性的等离子体约束环组件

    公开(公告)号：US20060207502A1

    公开(公告)日：2006-09-21

    申请号：US11083241

    申请日：2005-03-18

    申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  James Rogers

    发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  James Rogers

    IPC分类号： C23C16/00

    CPC分类号： H01J37/32623 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32642 ,  Y10S156/914 ,  Y10S156/915

    摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.

    摘要翻译： 提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。 等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。 热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

    Methods for preventing plasma un-confinement events in a plasma processing chamber
    13.
    发明授权
    Methods for preventing plasma un-confinement events in a plasma processing chamber 有权

    公开(公告)号：US09928995B2

    公开(公告)日：2018-03-27

    申请号：US12820020

    申请日：2010-06-21

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： B23P6/00 ,  H01J37/32

    CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

    摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

    Dual plasma volume processing apparatus for neutral/ion flux control
    14.
    发明授权
    Dual plasma volume processing apparatus for neutral/ion flux control 有权
    用于中性/离子通量控制的双等离子体体积处理装置

    公开(公告)号：US09184028B2

    公开(公告)日：2015-11-10

    申请号：US12850559

    申请日：2010-08-04

    申请人： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

    IPC分类号： C23F1/00 ,  H01L21/306 ,  H01J37/32

    CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

    摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

    摘要翻译： 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

    Integrated capacitive and inductive power sources for a plasma etching chamber
    15.
    发明授权
    Integrated capacitive and inductive power sources for a plasma etching chamber 有权
    用于等离子体蚀刻室的集成电容和感应电源

    公开(公告)号：US08911590B2

    公开(公告)日：2014-12-16

    申请号：US11363703

    申请日：2006-02-27

    申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32

    CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

    摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

    摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

    Triode reactor design with multiple radiofrequency powers
    17.
    发明授权
    Triode reactor design with multiple radiofrequency powers 有权
    具有多个射频功率的三极管反应器设计

    公开(公告)号：US08652298B2

    公开(公告)日：2014-02-18

    申请号：US13301725

    申请日：2011-11-21

    申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32091 ,  H01J37/32165

    摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

    摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

    SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL
    20.
    发明申请
    SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
    用于等离子体电压控制的系统，方法和装置

    公开(公告)号：US20130122711A1

    公开(公告)日：2013-05-16

    申请号：US13294053

    申请日：2011-11-10

    申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    IPC分类号： H01L21/3065 ,  C23F1/08

    CPC分类号： H01J37/32091 ,  H01J37/32165 ,  H01J37/32174

    摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.

    摘要翻译： 用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极 。 相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。 控制器耦合到等离子体室，每个RF源和锁相电路。 该控制器包括操作系统软件，多个逻辑电路和一个过程配方。