公开(公告)号：US20060097272A1

公开(公告)日：2006-05-11

申请号：US11311275

申请日：2005-12-20

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/22

摘要： A high light efficiency of GaN-series of light emitting diode and its manufacturing method thereof disclose a process and structure of a p-type semiconductor layer of surface texture structure generation. The optical waveguide effect can be interrupted and the possibility of hexagonal shaped pits defect generated can be reduced through said texture structure. The method explores that controlling the tension and compression of strain while a p-type cladding layer and a p-type transition layer are generated, and then a p-type ohmic contact is formed on said p-type transition layer. Through the control and its structure of said epitaxial growth process, the surface of said p-type semiconductor layer is with texture structure to increase external quantum efficiency and its operation life.

摘要翻译： GaN系发光二极管的高光效率及其制造方法公开了表面纹理结构生成的p型半导体层的工艺和结构。 可以中断光波导效应，并且可以通过所述纹理结构减少产生六边形凹坑缺陷的可能性。 该方法探索在p型覆层和p型过渡层产生时控制应变的张力和压缩，然后在所述p型过渡层上形成p型欧姆接触。 通过所述外延生长工艺的控制及其结构，所述p型半导体层的表面具有纹理结构，以增加外部量子效率及其使用寿命。

公开(公告)号：US20050263779A1

公开(公告)日：2005-12-01

申请号：US10781766

申请日：2004-02-20

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L29/22 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/32

摘要： A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

摘要翻译： 对GaN系发光元件及其制造方法进行说明。 发光装置是其上具有光提取层的发光体。 发光体具有一些GaN基层，并且当施加能量时能够发光。 光提取层是具有电流扩散层和微结构层的双层结构，或没有电流扩展层的单层结构。 微结构层是通过Ti层退火获得的具有纳米网状结构的TiN层或具有金属簇的Pt层的PtN层。

公开(公告)号：US20050191179A1

公开(公告)日：2005-09-01

申请号：US10840267

申请日：2004-05-07

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

IPC分类号： H01L21/28 ,  H01L31/0328 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

摘要： A structure and manufacturing of a gallium nitride light emitting diode discloses a transparent conductive window layer comprising a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohimc contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

摘要翻译： 氮化镓发光二极管的结构和制造公开了包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

公开(公告)号：US20050186783A1

公开(公告)日：2005-08-25

申请号：US10781769

申请日：2004-02-20

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L21/301

CPC分类号： H01L33/0079

摘要： A gallium nitride (GaN) vertical light emitting diode (LED) structure and a method of separating a substrate and a thin film thereon in the GaN vertical LED are described. The structure has a metal reflective layer for reflecting light. The method provides a laser array over the substrate. A laser light emitted by the laser array is least partially be transparent to the substrate and its energy may be absorbed by the thin film. The thin film is irradiated through the substrate. The substrate is then separated from the thin film.

摘要翻译： 描述了氮化镓（GaN）垂直发光二极管（LED）结构以及在GaN垂直LED中分离衬底和薄膜的方法。 该结构具有反射光的金属反射层。 该方法在衬底上提供激光阵列。 由激光器阵列发射的激光对于衬底至少部分是透明的，并且其能量可被薄膜吸收。 通过基板照射薄膜。 然后将基底与薄膜分离。

公开(公告)号：US20050161690A1

公开(公告)日：2005-07-28

申请号：US10878406

申请日：2004-06-29

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： F21V9/02 ,  C09K11/08 ,  C09K11/56 ,  C09K11/59 ,  C09K11/62 ,  C09K11/71 ,  C09K11/78 ,  C09K11/80 ,  C09K11/84 ,  F21Y101/02 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/50 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A manufacturing method and device for white light emitting comprise at least two light emitting layers capable of emitting the light with the wavelengths of λ1 and λ2. Upon absorbing the light with the wavelength of one light emitting layer by at least one kind of fluorescent material, the light with the wavelength of λ3 is emitted and then mixed together with the light with the other wavelength so as to output the white light for use. Then, the fluorescent material formed on the light emitting layer of the light emitting device is packed together with said light emitting device, and then the assembly is the white light emitting device with high color rendering index of this invention.

摘要翻译： 用于白光发射的制造方法和装置包括能够发射波长为λ1和λ2的光的至少两个发光层。 在通过至少一种荧光材料吸收具有一个发光层的波长的光时，发射波长为λ3的光，然后与具有另一波长的光一起混合，以输出白光 使用。 然后，将形成在发光器件的发光层上的荧光材料与所述发光器件一起包装，然后组装为本发明的高显色指数的白色发光器件。

公开(公告)号：US20050110031A1

公开(公告)日：2005-05-26

申请号：US10950132

申请日：2004-09-27

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/22 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/22

摘要： A high light efficiency of GaN-series of light emitting diode and its manufacturing method thereof disclose a process and structure of a p-type semiconductor layer of surface texture structure generation. The optical waveguide effect can be interrupted and the possibility of hexagonal shaped pits defect generated can be reduced through said texture structure. The method explores that controlling the tension and compression of strain while a p-type cladding layer and a p-type transition layer are generated, and then a p-type ohmic contact is formed on said p-type transition layer. Through the control and its structure of said epitaxial growth process, the surface of said p-type semiconductor layer is with texture structure to increase external quantum efficiency and its operation life.

摘要翻译： GaN系发光二极管的高光效率及其制造方法公开了表面纹理结构生成的p型半导体层的工艺和结构。 可以中断光波导效应，并且可以通过所述纹理结构减少产生六边形凹坑缺陷的可能性。 该方法探索在p型覆层和p型过渡层产生时控制应变的张力和压缩，然后在所述p型过渡层上形成p型欧姆接触。 通过所述外延生长工艺的控制及其结构，所述p型半导体层的表面具有纹理结构，以增加外部量子效率及其使用寿命。

公开(公告)号：US07319045B2

公开(公告)日：2008-01-15

申请号：US11428405

申请日：2006-07-03

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

摘要翻译： 提供了一种用于制造GaN基LED的方法。 该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。 该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩展金属层。 由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光 在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

公开(公告)号：US07154163B2

公开(公告)日：2006-12-26

申请号：US10838186

申请日：2004-05-05

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L29/201 ,  H01L31/0304

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/2003

摘要： An epitaxial structure of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitride is formed on the first buffer layer at a second temperature. The second temperature increases up to a third temperature, during which precursors including In(CH3)3 and NH3 are used for surface treatment. A high-temperature gallium nitride is formed at the third temperature. The buffer layer and the way to form such a buffer layer allow improved crystal configuration and lowered defect density, thereby increasing the performance and service life of a semiconductor device.

摘要翻译： 描述了氮化镓系半导体器件的外延结构及其形成工艺。 在第一温度下在衬底上外延形成氮化镓的第一缓冲层。 在第二温度下，在第一缓冲层上形成氮化铟镓的第二缓冲层。 第二温度增加到第三温度，在此期间，使用包括In（CH 3 3 3）3 N 3和NH 3的前体进行表面处理。 在第三温度下形成高温氮化镓。 缓冲层和形成这种缓冲层的方式允许改善晶体结构并降低缺陷密度，从而提高半导体器件的性能和使用寿命。

公开(公告)号：US20060267027A1

公开(公告)日：2006-11-30

申请号：US11485263

申请日：2006-07-13

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Jenn-Bin Huang ,  Chi-Feng Chan ,  Hsueh-Feng Sun ,  Shi-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Jenn-Bin Huang ,  Chi-Feng Chan ,  Hsueh-Feng Sun ,  Shi-Ming Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/32

摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

摘要翻译： 一种具有高光提取效率的发光氮化镓基III-V族化合物半导体器件，其特征在于具有凹和/或凸表面的基底，纹理表面层和透明导电窗层。 因此，工作电压降低，光提取效率提高。

公开(公告)号：US07119374B2

公开(公告)日：2006-10-10

申请号：US10781766

申请日：2004-02-20

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/32

摘要： A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.