公开(公告)号：US11282865B2

公开(公告)日：2022-03-22

申请号：US16688000

申请日：2019-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Takahiro Iguchi

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786 ,  H01L29/66

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

公开(公告)号：US10381486B2

公开(公告)日：2019-08-13

申请号：US15219396

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Naoto Goto

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  G06F3/041 ,  H01L27/105 ,  H01L27/146 ,  C23C16/455 ,  H01L29/24 ,  H01L29/66 ,  G06F3/044 ,  C23C14/08 ,  C23C14/34

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a gate electrode over the second insulating film; a metal oxide film in contact with a side surface of the second insulating film; and a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

公开(公告)号：US10372274B2

公开(公告)日：2019-08-06

申请号：US15091295

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/044 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  G06F3/041 ,  H01L29/66

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US10147780B2

公开(公告)日：2018-12-04

申请号：US15290085

申请日：2016-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki Nakamura ,  Kohei Yokoyama ,  Yasuhiro Jinbo ,  Toshiki Sasaki ,  Masataka Nakada ,  Naoto Goto ,  Takahiro Iguchi

IPC: H01L27/32 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1368 ,  H01L27/12

Abstract: A novel display device that is highly convenient with low power consumption is provided. The display device includes a display element including a liquid crystal layer, a display element including a light-emitting layer, and a pixel circuit. Electrodes of the display element including the liquid crystal layer and the display element including the light-emitting layer are electrically connected to the pixel circuit. The electrode of the display element including the liquid crystal layer includes a reflective film including an opening. The pixel circuit includes a transistor including a semiconductor film. The number of insulating films in a region overlapping with the opening is smaller than that of insulating films overlapping with the semiconductor film. In addition, the display element including the light-emitting layer includes two light-emitting elements. The number of optical elements overlapping with one light-emitting element is smaller than that of optical elements overlapping with the other light-emitting element.

公开(公告)号：US09640555B2

公开(公告)日：2017-05-02

申请号：US14733052

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Takahiro Iguchi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/7869

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

公开(公告)号：US09171803B2

公开(公告)日：2015-10-27

申请号：US14306862

申请日：2014-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takahiro Iguchi

IPC: H01L29/15 ,  H01L23/532 ,  H01L21/768 ,  H01L29/786 ,  H01L51/00 ,  G02F1/1333 ,  G02F1/1362

CPC classification number: H01L21/76829 ,  G02F1/133345 ,  G02F1/136204 ,  G02F2001/136295 ,  G02F2201/50 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/3272 ,  H01L29/458 ,  H01L29/786 ,  H01L29/7869 ,  H01L51/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To improve the reliability of a semiconductor device including a low-resistance material such as copper, aluminum, gold, or silver as a wiring. Provided is a semiconductor device including a pair of electrodes electrically connected to a semiconductor layer which has a stacked-layer structure including a first protective layer in contact with the semiconductor layer and a conductive layer containing the low-resistance material and being over and in contact with the first protective layer. The top surface of the conductive layer is covered with a second protective layer functioning as a mask for processing the conductive layer. The side surface of the conductive layer is covered with a third protective layer. With this structure, entry or diffusion of the constituent element of the pair of conductive layers containing the low-resistance material into the semiconductor layer is suppressed.

Abstract translation: 为了提高包括诸如铜，铝，金或银的低电阻材料的半导体器件作为布线的可靠性。 提供一种半导体器件，其包括电连接到半导体层的一对电极，所述半导体层具有层叠结构，所述层叠结构包括与半导体层接触的第一保护层和包含低电阻材料的导电层并且接触 与第一保护层。 导电层的顶表面覆盖有用作处理导电层的掩模的第二保护层。 导电层的侧表面被第三保护层覆盖。 通过这种结构，抑制了含有低电阻材料的一对导电层的构成元素进入或扩散到半导体层中。

公开(公告)号：US12034080B2

公开(公告)日：2024-07-09

申请号：US16520831

申请日：2019-07-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Masami Jintyou ,  Takahiro Iguchi ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

公开(公告)号：US11036324B2

公开(公告)日：2021-06-15

申请号：US16830795

申请日：2020-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/041 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  H01L29/66 ,  G06F3/044

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US10002971B2

公开(公告)日：2018-06-19

申请号：US14755886

申请日：2015-06-30

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Masami Jintyou ,  Takahiro Iguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78696

Abstract: A change in electrical characteristics can be suppressed and reliability can be improved in a semiconductor device including a transistor having an oxide semiconductor. A semiconductor device includes a transistor, and the transistor includes an oxide semiconductor film over a first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a conductive film in contact with a side surface of the gate electrode in a channel length direction, and a second insulating film over the oxide semiconductor film. The oxide semiconductor film includes a first region overlapping with the gate electrode, a second region overlapping with the conductive film, and a third region in contact with the second insulating film. The third region includes a region having higher impurity element concentration than the second region.

公开(公告)号：US09905579B2

公开(公告)日：2018-02-27

申请号：US15451540

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Hiroyuki Miyake ,  Kengo Akimoto ,  Masami Jintyou ,  Takahiro Iguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device with a reduced layout area of transistors is provided. The semiconductor device includes a first transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film over a substrate. When the oxide semiconductor films are subjected to electron diffraction, the ratio of the integrated intensity of luminance of a diffraction spot derived from c-axis alignment to the integrated intensity of luminance of a diffraction spot derived from alignment in any direction in the first oxide semiconductor film is higher than that in the second oxide semiconductor film. In addition, part of the first transistor is located between the second transistor and the substrate.