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    Method for forming oxide semiconductor film and method for manufacturing semiconductor device
    11.
    发明授权
    Method for forming oxide semiconductor film and method for manufacturing semiconductor device 有权
    氧化物半导体膜的形成方法及半导体装置的制造方法

    公开(公告)号：US09209267B2

    公开(公告)日：2015-12-08

    申请号：US14734492

    申请日：2015-06-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Daigo Ito ,  Yuichi Sato ,  Kosei Noda

    IPC: H01L21/265 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

    CPC classification number: H01L29/66477 ,  H01L21/02565 ,  H01L21/265 ,  H01L29/66969 ,  H01L29/7869

    Abstract: An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

    Abstract translation: 在基板上形成氧化物半导体膜。 牺牲膜形成为使得在氧化物半导体膜的深度方向上注入到氧化物半导体膜中的注入物质的浓度分布的局部最大值位于从衬底和氧化物之间的界面的区域中的局部最大值 半导体膜到氧化物半导体膜的表面。 将氧离子作为注入物质通过牺牲膜以这样的加速电压注入到氧化物半导体膜中，使得注入物质在氧化物半导体膜的深度方向上的浓度分布的局部最大值位于该区域中，以及 然后去除牺牲膜。 此外，使用氧化物半导体膜制造半导体器件。

    Semiconductor device
    12.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09035304B2

    公开(公告)日：2015-05-19

    申请号：US14451683

    申请日：2014-08-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Sachiaki Tezuka ,  Tomokazu Yokoi ,  Yusuke Shino

    IPC: H01L29/12 ,  H01L29/24 ,  H01L29/786 ,  H01L21/84 ,  H01L27/108 ,  H01L27/115 ,  H01L27/12 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66

    CPC classification number: H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

    Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

    Abstract translation: 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

    Oxide semiconductor device
    13.
    发明授权
    Oxide semiconductor device 有权

    公开(公告)号：US12224293B2

    公开(公告)日：2025-02-11

    申请号：US18399990

    申请日：2023-12-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yuichi Sato ,  Hitoshi Nakayama

    IPC: H01L27/13 ,  H01L27/12 ,  H01L29/24 ,  H10B12/00

    Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

    Capacitor, semiconductor device, and manufacturing method of semiconductor device
    14.
    发明授权
    Capacitor, semiconductor device, and manufacturing method of semiconductor device 有权

    公开(公告)号：US11380688B2

    公开(公告)日：2022-07-05

    申请号：US16478532

    申请日：2018-01-18

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yuichi Sato ,  Ryota Hodo ,  Yuta Iida ,  Tomoaki Moriwaka

    IPC: H01L27/108 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L23/532

    Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

    Semiconductor device
    15.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11257960B2

    公开(公告)日：2022-02-22

    申请号：US16981148

    申请日：2019-03-21

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yuichi Sato ,  Hitoshi Nakayama

    IPC: H01L29/786 ,  H01L29/22 ,  H01L29/51

    Abstract: A semiconductor device having high on-state current and favorable reliability is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a first conductor over the third oxide; a second conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a third conductor positioned over the second insulator and overlapping with the second oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide, and the conductivity of the fourth oxide is higher than the conductivity of the second oxide.

    Method for processing oxide semiconductor film and method for manufacturing semiconductor device
    19.
    发明授权
    Method for processing oxide semiconductor film and method for manufacturing semiconductor device 有权
    氧化物半导体膜的制造方法及半导体装置的制造方法

    公开(公告)号：US09006735B2

    公开(公告)日：2015-04-14

    申请号：US14227231

    申请日：2014-03-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Shinji Ohno ,  Yuichi Sato ,  Junichi Koezuka ,  Sachiaki Tezuka

    IPC: H01L21/336 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02

    CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

    Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

    Abstract translation: 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

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