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公开(公告)号：US09871168B2
公开(公告)日：2018-01-16
申请号：US14954835
申请日：2015-11-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Se Hee Oh , Yeo Jin Yoon , Jong Kyu Kim
CPC classification number: H01L33/20 , H01L27/153 , H01L33/0095 , H01L33/62
Abstract: Disclosed is a light emitting diode including a plurality of light emitting diode elements and a method of fabricating the same. The light emitting diode includes: a substrate; a plurality of light emitting diode elements disposed on the substrate; interconnection lines connecting the light emitting diode elements to each other, wherein the plurality of light emitting diode elements comprise outer light emitting diode elements aligned along an edge of the substrate, each of the outer light emitting diode elements comprises an inner face directed towards an adjacent light emitting diode element and an outer face disposed adjacent the edge of the substrate and directed towards an outside of the substrate, and the inner face of at least one of the outer light emitting diode elements comprises a more gently slanted side surface than the outer face thereof.
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公开(公告)号：US20170365638A9
公开(公告)日：2017-12-21
申请号：US15409306
申请日：2017-01-18
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Kyu Kim , So Ra Lee , Yeo Jin Yoon , Jae Kwon Kim , Joon Sup Lee , Min Woo Kang , Se Hee Oh , Hyun A Kim , Hyoung Jin Lim
CPC classification number: H01L27/156 , H01L33/08 , H01L33/36 , H01L33/38 , H01L33/58 , H01L33/60 , H01L33/62 , H01L33/64 , H01L2224/16225 , H01L2224/32245 , H01L2924/181 , H01L2924/19107 , H01L2933/0016 , H01L2924/00012
Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
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公开(公告)号：US09680060B2
公开(公告)日：2017-06-13
申请号：US15003928
申请日：2016-01-22
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jae Kwon Kim , Yeo Jin Yoon , Jong Kyu Kim , So Ra Lee , Sum Geun Lee , Hyun Haeng Lee
IPC: H01L33/00 , H01L33/22 , H01L27/15 , H01L33/08 , H01L33/62 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/20
CPC classification number: H01L27/153 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62
Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.
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公开(公告)号：US09634061B2
公开(公告)日：2017-04-25
申请号：US15150863
申请日：2016-05-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seom Geun Lee , Jong Kyu Kim , Yeo Jin Yoon , Jae Kwon Kim , Mae Yi Kim
IPC: H01L33/00 , H01L27/15 , H01L33/62 , H01L33/42 , H01L33/08 , H01L33/46 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/38 , H01L33/14 , H01L33/44
CPC classification number: H01L27/15 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other to expose a surface of the substrate, a first transparent layer disposed on and electrically connected to the first light emitting cell, first connection section disposed on a portion of the first light emitting cell, a second connection section disposed on a portion of the second light emitting cell, a first interconnection and a second interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the first and second interconnections and a side surface of the first light emitting cell.
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公开(公告)号：USD776629S1
公开(公告)日：2017-01-17
申请号：US29535497
申请日：2015-08-06
Applicant: Seoul Viosys Co., Ltd.
Designer： Jong Kyu Kim , Yeo Jin Yoon
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Patent Agency Ranking
公开(公告)号：US09508909B2
公开(公告)日：2016-11-29
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L27/15 , H01L33/60 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/44 , H01L33/06 , H01L33/00
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括接触n型化合物半导体层的Ni层和设置在Ni层上的两个Au层。
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公开(公告)号：US20160111613A1
公开(公告)日：2016-04-21
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括与n型化合物半导体层接触的Ni层和设置在Ni层上的2层Au层。
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公开(公告)号：US09269867B2
公开(公告)日：2016-02-23
申请号：US14076626
申请日：2013-11-11
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Ye Seul Kim , Shin Hyoung Kim , Kyoung Wan Kim , Yeo Jin Yoon , Jun Woong Lee , Tae Gyun Kim
CPC classification number: H01L33/32 , H01L33/14 , H01L33/22 , H01L33/382 , H01L2933/0016
Abstract: A light-emitting device according to an exemplary embodiment of the present invention includes a first conductivity-type semiconductor layer disposed on a substrate; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; and an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer. The irregular convex-concave pattern includes convex portions and concave portions, and the convex portions have irregular heights and the concave portions have irregular depths. The first conductivity-type semiconductor layer including the irregular convex-concave pattern is exposed from the active layer and the second conductivity-type semiconductor layer.
Abstract translation: 根据本发明的示例性实施例的发光器件包括设置在基板上的第一导电型半导体层; 设置在所述第一导电型半导体层上的有源层; 设置在有源层上的第二导电型半导体层; 以及设置在第一导电型半导体层的表面上的不规则的凸凹图案。 不规则的凸凹图案包括凸部和凹部，凸部具有不规则的高度，凹部具有不规则的深度。 包含不规则凸凹图案的第一导电型半导体层从有源层和第二导电型半导体层露出。
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公开(公告)号：US09269745B2
公开(公告)日：2016-02-23
申请号：US14087140
申请日：2013-11-22
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jae Kwon Kim , Yeo Jin Yoon , Jong Kyu Kim , So Ra Lee , Sum Geun Lee , Hyun Haeng Lee
CPC classification number: H01L27/153 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62
Abstract: Exemplary embodiments of the present invention provide a light emitting diode including light emitting units disposed on a substrate, and wires connecting the light emitting units to each other, wherein the light emitting units each include a parallelogram-shaped light emitting unit having two acute angles and two obtuse angles, or a triangular light emitting unit having three acute angles.
Abstract translation: 本发明的示例性实施例提供一种发光二极管，其包括设置在基板上的发光单元和将发光单元彼此连接的导线，其中发光单元各自包括具有两个锐角的平行四边形形状的发光单元， 两个钝角，或具有三个锐角的三角形发光单元。
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公开(公告)号：US20150236210A1
公开(公告)日：2015-08-20
申请号：US14630273
申请日：2015-02-24
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/387 , H01L33/0008 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0066
Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer, a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
Abstract translation: 本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠， 位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘，从第一电极焊盘延伸并连接到第一导电类型半导体层的第一电极延伸部，与第二导电类型半导体层电连接的第二电极焊盘 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。
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