公开(公告)号：US5766498A

公开(公告)日：1998-06-16

申请号：US623737

申请日：1996-03-29

申请人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazushi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

发明人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazushi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32724 ,  H01J2237/3345

摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..

公开(公告)号：US5578164A

公开(公告)日：1996-11-26

申请号：US363270

申请日：1994-12-23

申请人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

发明人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

IPC分类号： H01J37/32 ,  B44C1/22

CPC分类号： H01J37/32623 ,  H01J37/32633

摘要： An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

摘要翻译： 一种用于对具有未被覆盖的边缘部分的半导体晶片（其中除去光致抗蚀剂膜）进行各向异性蚀刻的设备。 该装置包括可设置为真空的处理室。 在处理室中设置彼此相对的上下电极。 蚀刻气体在这些电极之间被制成等离子体。 下电极上设有静电吸盘。 将晶片安装在静电卡盘上。 由电介质材料制成的可上下移动的环设置在电极之间。 环的中心部分形成为具有对应于晶片的边缘部分的凹形的罩。 在蚀刻期间，罩覆盖等离子体护套下的晶片的边缘部分，以便与晶片脱离接触，从而防止晶片的边缘部分被蚀刻。

公开(公告)号：US20090191340A1

公开(公告)日：2009-07-30

申请号：US12314933

申请日：2008-12-18

申请人： Shigeki Tozawa

发明人： Shigeki Tozawa

IPC分类号： C23C16/30 ,  C23C16/56 ,  C23C16/44

CPC分类号： H01L21/02063 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76897

摘要： A substrate processing method includes a first step of subjecting a target substrate to a gas process within an atmosphere containing a fluorine-containing process gas, thereby forming a fluorine-containing reaction product on a surface of the target substrate. The method further includes a second step of subjecting the target substrate treated by the gas process to a heating process and a gas process within an atmosphere containing a reactive gas that reacts with fluorine.

摘要翻译： 基板处理方法包括：在包含含氟处理气体的气氛中对目标基板进行气体处理的第一工序，在目标基板的表面形成含氟反应产物。 该方法还包括第二步骤，对通过气体处理处理的目标衬底进行加热处理和在含有与氟反应的反应性气体的气氛中的气体过程。

公开(公告)号：US06190495B1

公开(公告)日：2001-02-20

申请号：US09361992

申请日：1999-07-28

申请人： Kazuhiro Kubota ,  Shigeki Tozawa ,  Jun Hirose ,  Akira Koshiishi ,  Tomomi Kondo

发明人： Kazuhiro Kubota ,  Shigeki Tozawa ,  Jun Hirose ,  Akira Koshiishi ,  Tomomi Kondo

IPC分类号： B23K1000

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3266

摘要： The magnetron plasma processing apparatus includes a vacuum chamber in which a semiconductor wafer is accommodated. In the chamber, a pair of electrodes are provided to face each other, and the wafer is placed on one electrode. Between a pair of the electrodes, a vertical electric field is formed, and a horizontal magnetic field is formed by the dipole ring magnet to cross perpendicularly to the electric field. The magnetic field has a gradient of the magnetic field intensity such that the intensity is high on the upstream side and is low on the downstream side in the electron-drift direction. Further, the magnetic field is formed such that the intensity is made uniform over a large area including the end portion of the wafer on the upstream side in the electron-drift direction and a region right outside it.

摘要翻译： 磁控管等离子体处理装置包括容纳半导体晶片的真空室。 在室内设置一对电极以彼此面对，并且将晶片放置在一个电极上。 在一对电极之间形成垂直电场，并且由偶极环磁体形成水平磁场以垂直于电场交叉。 磁场具有磁场强度的梯度，使得上游侧的强度高，并且在电子漂移方向的下游侧具有低的磁场强度。 此外，磁场形成为使得强度在包括晶片在电子漂移方向上游侧的晶片的端部和右侧的区域的大面积上均匀。

公开(公告)号：US5593540A

公开(公告)日：1997-01-14

申请号：US429648

申请日：1995-04-27

申请人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

发明人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

IPC分类号： H01J37/32 ,  B44C1/22

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32724 ,  H01J2237/3347

摘要： The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

摘要翻译： 本发明提供了一种等离子体蚀刻系统，其包括封装等离子体的处理室，用于抽出处理室的装置，用于支撑基板的卡盘电极，与所述卡盘电极相对设置并设有大量小孔的喷淋电极 用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源，与所述淋浴电极的所述小孔连通的气体供给装置，用于通过所述小孔将等离子体形成气体供给到所述处理室，以及用于控制 所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。

公开(公告)号：US08968475B2

公开(公告)日：2015-03-03

申请号：US13349190

申请日：2012-01-12

申请人： Masaya Odagiri ,  Shigeki Tozawa ,  Hajime Ugajin

发明人： Masaya Odagiri ,  Shigeki Tozawa ,  Hajime Ugajin

IPC分类号： C23C16/00 ,  H01L21/67

CPC分类号： H01L21/67173 ,  H01L21/67017 ,  H01L21/6719 ,  Y10T137/8593

摘要： A substrate processing apparatus, which is provided with a processing chamber configured to process a substrate and capable of being depressurized, includes a substrate placing table configured to place a substrate; a baffle plate disposed around the substrate placing table so as to divide an inside of the processing chamber into a processing space and an exhaust space; and an exhaust port configured to exhaust the inside of the processing chamber. A gap is formed between the substrate placing table and the baffle plate and a plurality of communication holes are formed in the baffle plate so that the processing space and the exhaust space communicate with each other.

摘要翻译： 一种基板处理装置，其具有：被配置为处理基板并能够减压的处理室，包括：基板放置台，其配置成放置基板; 挡板，其设置在所述基板载置台周围，以将所述处理室的内部分割成处理空间和排气空间; 以及被配置为排出处理室的内部的排气口。 在基板载置台和挡板之间形成间隙，并且在挡板中形成多个连通孔，使得处理空间和排气空间彼此连通。

公开(公告)号：US07922865B2

公开(公告)日：2011-04-12

申请号：US10362879

申请日：2001-08-28

申请人： Koji Miyata ,  Jun Hirose ,  Akira Kodashima ,  Shigeki Tozawa ,  Kazuhiro Kubota ,  Yuki Chiba

发明人： Koji Miyata ,  Jun Hirose ,  Akira Kodashima ,  Shigeki Tozawa ,  Kazuhiro Kubota ,  Yuki Chiba

IPC分类号： H01L21/306

CPC分类号： H01J37/3266 ,  H01J37/3408

摘要： In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.

摘要翻译： 在用于磁控管等离子体生成的磁场发生器中，其包括具有以环状布置的多个柱状各向异性区段磁体的偶极环磁体，或者在利用磁场发生器的蚀刻装置和方法中， 通过控制相对于进行诸如蚀刻等离子体处理的晶片（工件）的工作表面的磁场方向来改善晶片（工件）整个表面上的等离子体处理的均匀性。

公开(公告)号：US5779803A

公开(公告)日：1998-07-14

申请号：US696224

申请日：1996-08-13

申请人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

发明人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/32633

摘要： An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

摘要翻译： 一种用于对具有未被覆盖的边缘部分的半导体晶片（其中除去光致抗蚀剂膜）进行各向异性蚀刻的设备。 该装置包括可设置为真空的处理室。 在处理室中设置彼此相对的上下电极。 蚀刻气体在这些电极之间被制成等离子体。 下电极上设有静电吸盘。 将晶片安装在静电卡盘上。 由电介质材料制成的可上下移动的环设置在电极之间。 环的中心部分形成为具有对应于晶片的边缘部分的凹形的罩。 在蚀刻期间，罩覆盖等离子体护套下的晶片的边缘部分，以便与晶片脱离接触，从而防止晶片的边缘部分被蚀刻。

公开(公告)号：US5445709A

公开(公告)日：1995-08-29

申请号：US154566

申请日：1993-11-19

申请人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazuhsi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

发明人： Masayuki Kojima ,  Yoshikazu Ito ,  Kazuhsi Tomita ,  Shigeki Tozawa ,  Shunichi Iimuro ,  Masashi Arasawa ,  Eiichi Nishimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/06

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32724 ,  H01J2237/3345

摘要： A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..

摘要翻译： 平行板等离子体蚀刻装置包括布置在处理室中的基座电极和淋浴电极。 将半导体晶片放置在基座电极上。 在淋浴电极中形成由多个处理气体供给孔限定的淋浴区域。 淋浴电极被冷却块冷却，使淋浴电极的有效电极部分具有温度梯度，使得有效电极部分的中心部分的温度低于有效电极周边部分的温度 一部分。 淋浴区域的直径被选择为小于晶片的直径5至25％，使得由有效电极部分的温度梯度引起的晶片上的蚀刻各向异性程度的平面均匀度的降低被补偿 。 选择有效电极部分的直径大于晶片的尺寸5至35％，使得通过蚀刻形成的待蚀刻侧壁的锥角设定为85°至90°。