摘要:
Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample. The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.
摘要:
Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要:
The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.
摘要:
The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.
摘要:
In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.
摘要:
In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.
摘要:
A technology capable of reducing the influence of the noise overlapped in a long transmission line when accurately measuring weak beam current in an electron beam writing system and capable of accurately and efficiently measuring weak beam current in a beam writing system using multiple beams is provided. With using a switch for connecting and disconnecting an electron beam detecting device and a detected signal line, the electron beam detecting device is disconnected from the detected signal line to accumulate the detected signals in the electron beam detecting device during the beam current measurement. Simultaneously with the finish of the measurement, the electron beam detecting device and the detected signal line are connected to measure the accumulated signals. Also, in order to simultaneously perform the measurement method, a plurality of electron beam detecting devices and switches are used to simultaneously measure a plurality of electron beams with high accuracy.
摘要:
An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.
摘要:
In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.
摘要:
In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.