公开(公告)号：US08076698B2

公开(公告)日：2011-12-13

申请号：US11995040

申请日：2006-06-27

申请人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

发明人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

IPC分类号： H01L31/0328

CPC分类号： H01L29/739 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786

摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

摘要翻译： 在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。 晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压 ，孔被注入到通道中以增加在通道中流动的电流。

公开(公告)号：US20100327486A1

公开(公告)日：2010-12-30

申请号：US12821429

申请日：2010-06-23

申请人： Norimasa Kuki ,  Yoshikane Akiyama ,  Mitiharu Hikosaka ,  Kazuhiko Kato ,  Kazumasa Sekido ,  Daisuke Ueda ,  Harumi Niwa ,  Hiroshi Itazu ,  Yuji Mizuno

发明人： Norimasa Kuki ,  Yoshikane Akiyama ,  Mitiharu Hikosaka ,  Kazuhiko Kato ,  Kazumasa Sekido ,  Daisuke Ueda ,  Harumi Niwa ,  Hiroshi Itazu ,  Yuji Mizuno

IPC分类号： B28B1/02

CPC分类号： F16F1/3842 ,  B21H1/18 ,  B21J5/00 ,  B21J5/008 ,  B21J5/12 ,  B21J9/025 ,  B21K21/12 ,  F16F1/3828 ,  F16F1/3863 ,  F16F2230/0035 ,  F16F2230/02

摘要： A method of manufacturing a cylindrical member having anti-slip projections formed on axial end faces, the method comprising the steps of: employing a roller die, which is provided with a circumferential die groove of annular form extending through a medial section in a generatrix direction of a die face defined by an integral tapered outside peripheral face, and with a plurality of sloping die grooves extending in a tapered slope direction of the die face situated to both large-diameter and small-diameter sides of the circumferential die groove; providing plastic working to the axial end face with the small-diameter side of the roller die facing towards an inner peripheral side of the cylindrical member and with the large-diameter side facing towards an outer peripheral side, by pushing the die face against the axial end face while rotating circumferentially; and forming simultaneously an annular water barrier projection and the anti-slip projections.

摘要翻译： 一种制造具有形成在轴向端面上的防滑突起的圆柱形构件的方法，所述方法包括以下步骤：使用辊模，其设置有沿母线方向延伸穿过中间部分的环形的周向模槽 具有由整体的锥形外周面限定的模具面，并且具有沿着位于周向模槽的大直径侧和小直径侧的模面的锥形倾斜方向延伸的多个倾斜模槽; 向所述轴向端面提供塑性加工，所述辊模的小直径侧朝向所述圆筒形构件的内周侧，并且所述大直径侧面向外周侧，通过将所述模具面朝向轴向 端面旋转; 同时形成环形防水突起和防滑突起。

公开(公告)号：US07825434B2

公开(公告)日：2010-11-02

申请号：US11647218

申请日：2006-12-29

申请人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/08

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/452 ,  H01L29/7787

摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

摘要翻译： 氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及第四半导体层，形成在与所述主表面相对的所述第一半导体层的表面上，相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体构成。

公开(公告)号：US07773646B2

公开(公告)日：2010-08-10

申请号：US12280603

申请日：2007-03-14

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

IPC分类号： H01S3/00

CPC分类号： H01S5/042

摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

摘要翻译： 半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流 被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。 反向偏压的大小受流过发光器件的反向电流的值的限制。

公开(公告)号：US20100182895A1

公开(公告)日：2010-07-22

申请号：US12685900

申请日：2010-01-12

申请人： Mitsuaki Oyamada ,  Takashi Iwamura ,  Daisuke Ueda ,  Takehide Endo

发明人： Mitsuaki Oyamada ,  Takashi Iwamura ,  Daisuke Ueda ,  Takehide Endo

IPC分类号： G11B3/70

CPC分类号： G11B7/2535 ,  B82Y10/00 ,  G11B7/245 ,  G11B7/246 ,  G11B7/2534 ,  G11B7/2538 ,  G11B2007/25411 ,  G11B2007/25417 ,  G11B2007/2571 ,  G11B2007/25713 ,  G11B2007/25715

摘要： An optical information recording medium includes a recording layer in which a recording mark formed of a cavity is formed in accordance with a light for recording, and which contains therein a compound having a skeleton expressed by the general formula (1): where R1, R2, R3, and R4 are either hydrogen atoms or substituents.

摘要翻译： 光学信息记录介质包括记录层，其中根据用于记录的光形成由空腔形成的记录标记，并且其中含有具有由通式（1）表示的骨架的化合物：其中R1，R2 ，R 3和R 4为氢原子或取代基。

公开(公告)号：US07738525B2

公开(公告)日：2010-06-15

申请号：US12065991

申请日：2007-07-09

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/162 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3404

摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

摘要翻译： 半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。 在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。 窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。 布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

公开(公告)号：US20090121411A1

公开(公告)日：2009-05-14

申请号：US12265126

申请日：2008-11-05

申请人： Akira Kosugi ,  Daisuke Ueda ,  Tomoo Suzuki

发明人： Akira Kosugi ,  Daisuke Ueda ,  Tomoo Suzuki

IPC分类号： B65H5/22

CPC分类号： B65H3/48 ,  B65H3/128 ,  B65H7/16 ,  B65H2402/10 ,  B65H2405/15 ,  B65H2406/41 ,  B65H2511/514 ,  B65H2515/212 ,  B65H2701/1311 ,  B65H2701/1313 ,  B65H2220/02 ,  B65H2220/01

摘要： A sheet feeding device, having: a sheet feeding tray which stacks a paper sheet bundle formed by a plurality of sheets; a first blower which blows air to a side edge of the paper sheet bundle stacked on the sheet feeding tray; a second blower which blows air to a leading edge of the paper sheet bundle in a sheet conveyance direction from a forward side of the paper sheet bundle in the sheet conveyance direction; and an adsorption conveyance section which adsorbs a topmost sheet of the paper sheet bundle stacked on the sheet feeding tray and conveys the topmost sheet, wherein a first area in which the adsorption conveyance section is provided, and a second area in which a ventilation port of the first blower is provided, respectively includes an overlapping area in which the first area and the second area overlap on the sheet conveyance direction.

摘要翻译： 一种送纸装置，具有：由多张纸形成的纸张束堆叠的供纸托盘; 将空气吹送到堆叠在供纸盘上的纸张束的侧边缘的第一鼓风机; 第二鼓风机，其在片材输送方向上从纸张束的前侧沿片材输送方向将空气吹送到纸张束的前端; 以及吸附输送部，其吸收堆叠在供纸托盘上的纸张束的最上面的纸张，并输送最上面的纸张，其中设置有吸附传送部分的第一区域和第二区域，其中通风口 设置第一鼓风机，分别包括第一区域和第二区域在片材输送方向上重叠的重叠区域。

公开(公告)号：US07456707B2

公开(公告)日：2008-11-25

申请号：US11194460

申请日：2005-08-02

申请人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

发明人： Naohiro Tsurumi ,  Kazuhiro Yahata ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda ,  Atsuhiko Kanda

IPC分类号： H03H9/54

CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/172 ,  H03H9/564 ,  H03H2003/021

摘要： An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.

摘要翻译： 声谐振器包括：基板; 一种谐振膜，其被支撑在基板的主表面上方，分别包括压电膜和一对顶电极和底电极，它们分别形成在压电膜的顶表面和底表面的一部分上 通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。 谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方，在谐振膜的至少一部分之上，其中顶部电极和底部电极彼此重合，并且在另一部分中设置隔离腔 所述区域不存在支撑和谐振腔。

公开(公告)号：US20070205407A1

公开(公告)日：2007-09-06

申请号：US11712482

申请日：2007-03-01

申请人： Hisayoshi Matsuo ,  Tatsuo Morita ,  Tetsuzo Ueda ,  Daisuke Ueda

发明人： Hisayoshi Matsuo ,  Tatsuo Morita ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01L29/06

CPC分类号： H01L29/045 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/12

摘要： A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

摘要翻译： 氮化物半导体器件包括半导体层叠结构，其由具有第一主表面和与第一主表面相对并包括有源层的第二主表面的氮化物半导体形成。 半导体堆叠结构的第一主表面形成有多个平面取向为{0001}面并且第二主面的平面取向为{1-101}面的凹陷。 有源层沿{1-101}面形成。

公开(公告)号：US20070058982A1

公开(公告)日：2007-03-15

申请号：US11519973

申请日：2006-09-13

申请人： Toshikazu Onishi ,  Tetsuzo Ueda ,  Daisuke Ueda

发明人： Toshikazu Onishi ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H04B10/00

CPC分类号： H01S5/18355 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/105 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/18386 ,  H01S5/3432 ,  H01S5/423 ,  Y02E10/50

摘要： A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.

摘要翻译： 表面发射激光器包括用于在不同的线偏振光方向上发射激光束的多个发光部分。 发光部分形成在基板上并且彼此靠近。 发光部分包括分别通过不同线偏振光方向的光束的金属开口阵列。