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    Light-emitting semiconductor device using group III nitrogen compound
    11.
    发明授权
    Light-emitting semiconductor device using group III nitrogen compound 有权
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US07867800B2

    公开(公告)日：2011-01-11

    申请号：US12003173

    申请日：2007-12-20

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L21/00

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2）的厚度为500埃。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 发射层（5）的厚度约为0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×1017 / cm3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

    Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
    13.
    发明授权
    Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities 失效
    使用III族氮化合物的发光半导体器件具有掺杂有供体和受主杂质的发射层

    公开(公告)号：US6005258A

    公开(公告)日：1999-12-21

    申请号：US806646

    申请日：1997-02-26

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L29/06

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/40 ,  H01L33/382 ,  H01L33/385

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8) from each other. The composition ration of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n.sup.+ -layer (3). The LED (10) is designed to improve luminous intensity and to obtain a purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2） - 厚度为500 ANGSTROM。 GaN N +层（3）的厚度约为2.0μm，电子浓度约为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度约为2×10 18 / cn 3。 发射层（5）的厚度约为0.5μm。 p层6的厚度为约1.0μm，并且具有约2×10 17 / cm 3的空穴浓度。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 沟槽（9）将电极（7,8）彼此电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比来满足n +层（3）中的GaN的晶格常数。 LED（10）被设计成改善发光强度并获得更纯的蓝色。

    Method for producing Group III nitride compound semiconductor
    14.
    发明授权
    Method for producing Group III nitride compound semiconductor 有权
    生产III族氮化物化合物半导体的方法

    公开(公告)号：US07112243B2

    公开(公告)日：2006-09-26

    申请号：US10200586

    申请日：2002-07-23

    申请人： Masayoshi Koike ,  Shiro Yamazaki

    发明人： Masayoshi Koike ,  Shiro Yamazaki

    IPC分类号： C30B29/38 ,  H01L21/36

    CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

    摘要： The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound semiconductor even when the semiconductor is cooled to room temperature. The method includes a buffer layer formation step for forming a gas-etchable buffer layer on the hetero-substrate, and a semiconductor formation step for epitaxially growing the Group III nitride compound semiconductor on the buffer layer through a vapor phase growth method, wherein at least a portion of the buffer layer is gas-etched during or after the semiconductor formation step.

    摘要翻译： 本发明提供了一种制造III族氮化物化合物半导体的方法，该方法在外延生长期间仅允许半导体与异质衬底的反应最小，并且即使当半导体被冷却到第三族氮化物半导体时也不引起裂纹 室内温度。 该方法包括用于在异质衬底上形成气体可蚀刻缓冲层的缓冲层形成步骤，以及用于通过气相生长法在缓冲层上外延生长III族氮化物半导体的半导体形成步骤，其中至少 在半导体形成步骤期间或之后，缓冲层的一部分被气蚀刻。

    Light-emitting device using group III nitride group compound semiconductor
    15.
    发明授权
    Light-emitting device using group III nitride group compound semiconductor 失效
    使用III族氮化物类化合物半导体的发光装置

    公开(公告)号：US07084421B2

    公开(公告)日：2006-08-01

    申请号：US09725496

    申请日：2000-11-30

    申请人： Masayoshi Koike ,  Shiro Yamazaki ,  Akira Kojima

    发明人： Masayoshi Koike ,  Shiro Yamazaki ,  Akira Kojima

    IPC分类号： H01L29/06

    CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/32341

    摘要： A light-emitting semiconductor device provides an active layer which comprises thirteen (13) layers that includes six (6) pairs of quantum barrier layers made of Al0.95In0.05N and quantum well layers made of Al0.70In0.30N, which are laminated together alternately. The semiconductor device may also comprise a quantum well layer having a high composition ratio of indium (In). Forming the quantum barrier layer and the quantum well layer to have a high composition ratio of indium (In) increases the lattice constant of the active layer of the semiconductor device.

    摘要翻译： 一种发光半导体器件提供了一种有源层，其包括十三（13）层，其包括六（6）对量子阻挡层，所述量子势垒层由Al 0.95 N和N N N制成， 交替地层叠在一起的由Al 0.70 N 3 O 3 N制成的量子阱层。 半导体器件还可以包括具有高的铟（In）组成比的量子阱层。 形成量子势垒层和量子阱层以具有高的铟（In）组成比增加了半导体器件的有源层的晶格常数。

    Production Methods of Semiconductor Crystal and Semiconductor Substrate
    18.
    发明申请
    Production Methods of Semiconductor Crystal and Semiconductor Substrate 审中-公开
    半导体晶体和半导体基板的生产方法

    公开(公告)号：US20090155580A1

    公开(公告)日：2009-06-18

    申请号：US12225389

    申请日：2007-04-05

    申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： C30B19/02 ,  B32B9/00 ,  B32B1/00

    CPC分类号： C30B29/403 ,  C30B9/00 ,  H01L33/0075 ,  Y10T428/265 ,  Y10T428/266

    摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.

    摘要翻译： 提供适合于制造电子器件或光学器件的高品质的半导体衬底。 本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素 在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

    Method for producing group III nitride-based compound semiconductor crystal
    19.
    发明授权
    Method for producing group III nitride-based compound semiconductor crystal 有权
    制备III族氮化物基化合物半导体晶体的方法

    公开(公告)号：US08227324B2

    公开(公告)日：2012-07-24

    申请号：US12448207

    申请日：2007-12-10

    申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： H01L21/20

    CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625

    摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.

    摘要翻译： 在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。 因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。 当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解 在助焊剂混合物中。

    Method for producing a semiconductor crystal
    20.
    发明授权
    Method for producing a semiconductor crystal 有权
    半导体晶体的制造方法

    公开(公告)号：US08216365B2

    公开(公告)日：2012-07-10

    申请号：US12073178

    申请日：2008-02-29

    申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： C30B25/18

    CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

    摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.

    摘要翻译： 本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。 包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐 在x轴方向。 因此，在m平面上存在支撑工具与晶种接触的三个接触点。 支撑工具具有在垂直方向上延伸的两个支撑构件。 一个支撑构件具有相对于水平面α倾斜30°的端部。 在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。 实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。