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公开(公告)号：US06172382B2
公开(公告)日：2001-01-09
申请号：US09004925
申请日：1998-01-09
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L33/04 , H01S5/3216 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US08541794B2
公开(公告)日：2013-09-24
申请号：US12570907
申请日：2009-09-30
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US07496124B2
公开(公告)日：2009-02-24
申请号：US11287339
申请日：2005-11-28
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2031 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/223 , H01S5/2231 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.
摘要翻译： 氮化物半导体激光装置在高输出功率下具有改进的横向模式的稳定性和更长的寿命，使得该装置可以用于写入和读取具有高容量的记录介质的光源。 氮化物半导体激光器件依次层叠有有源层，p侧覆层，p侧接触层。 该器件还包括通过从p侧接触层蚀刻而形成的条纹结构的波导区域。 通过蚀刻提供的条纹宽度在1-3μm的条纹范围内，并且蚀刻深度低于0.1μm的p侧包覆层的厚度和活性层上方。 特别是，当p侧光波导层包括条形结构的突出部分和突起部分上的p型氮化物半导体层和p侧光波导层的突出部分的厚度不大于1 妈妈，远景图像的纵横比得到改善。 此外，p侧光波导层的厚度大于n侧光波导层的厚度。
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公开(公告)号：US20060078022A1
公开(公告)日：2006-04-13
申请号：US11287339
申请日：2005-11-28
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2031 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/223 , H01S5/2231 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.
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公开(公告)号：US07015053B2
公开(公告)日：2006-03-21
申请号：US10700270
申请日：2003-11-04
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2031 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/223 , H01S5/2231 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.
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公开(公告)号：US20050127394A1
公开(公告)日：2005-06-16
申请号：US11026062
申请日：2005-01-03
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US07211822B2
公开(公告)日：2007-05-01
申请号：US11026062
申请日：2005-01-03
IPC分类号： H01L31/0304
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US20050054132A1
公开(公告)日：2005-03-10
申请号：US10951767
申请日：2004-09-29
申请人： Shinichi Nagahama , Shuji Nakamura
发明人： Shinichi Nagahama , Shuji Nakamura
IPC分类号： H01L21/20 , H01L21/205 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01S5/02 , H01S5/32 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01S5/021 , H01S5/0422 , H01S5/3201 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.
摘要翻译： 氮化物半导体器件包括至少在其表面上具有单晶GaN层的GaN衬底和由氮化物半导体制成的多个器件形成层。 与GaN衬底接触的器件形成层的热膨胀系数小于GaN的热膨胀系数，从而对器件形成层施加压缩应变。 这导致防止器件形成层中的裂纹形成，并且提高了氮化物半导体器件的寿命特性。
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公开(公告)号：US06849864B2
公开(公告)日：2005-02-01
申请号：US10601582
申请日：2003-06-24
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
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公开(公告)号：US06835956B1
公开(公告)日：2004-12-28
申请号：US09500288
申请日：2000-02-08
申请人： Shinichi Nagahama , Shuji Nakamura
发明人： Shinichi Nagahama , Shuji Nakamura
IPC分类号： H01L2715
CPC分类号： C30B29/403 , C30B25/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01S5/021 , H01S5/0422 , H01S5/3201 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.
摘要翻译： 氮化物半导体器件包括至少在其表面上具有单晶GaN层的GaN衬底和由氮化物半导体制成的多个器件形成层。 与GaN衬底接触的器件形成层的热膨胀系数小于GaN的热膨胀系数，从而对器件形成层施加压缩应变。 这导致防止器件形成层中的裂纹形成，并且提高了氮化物半导体器件的寿命特性。
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