PROBE CARD AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    14.
    发明申请
    PROBE CARD AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
    探针卡和制造半导体集成电路器件的方法

    公开(公告)号:US20110281380A1

    公开(公告)日:2011-11-17

    申请号:US13107317

    申请日:2011-05-13

    IPC分类号: H01L21/66 G01R31/00

    CPC分类号: G01R3/00 G01R1/07314

    摘要: Provided is a probe card for LSI inspection that can achieve electrical conduction to electrodes on an LSI with a low load without damaging the electrodes and a structural body therebelow, even if the electrodes are arranged at a narrow pitch and in a complex manner. A contact terminal is formed in a truncated square pyramidal recess provided on a film-shaped probe. A dent is often formed on a surface of the film-shaped probe just above the contact terminal. A resin coating film is formed so as to eliminate the dent and flatten the surface of the film-shaped probe. At this time, it is preferred that an amount of cure shrinkage of a resin paste for forming the resin coating film is 0.1% or less.

    摘要翻译: 提供了一种用于LSI检查的探针卡,即使以窄间距和复杂的方式布置电极,也可以在低负载下实现对LSI上的电极的导电而不损坏电极及其结构体。 接触端子形成在设置在膜状探针上的截头方形锥形凹部中。 通常在接触端子正上方的膜状探针的表面上形成凹痕。 形成树脂涂膜,以消除凹陷并使膜形探针的表面变平。 此时,用于形成树脂涂膜的树脂糊剂的固化收缩率优选为0.1%以下。

    Probing device and manufacturing method thereof, as well as testing apparatus and manufacturing method of semiconductor with use thereof
    16.
    发明授权
    Probing device and manufacturing method thereof, as well as testing apparatus and manufacturing method of semiconductor with use thereof 失效
    探测装置及其制造方法以及其使用的半导体的测试装置和制造方法

    公开(公告)号:US06900646B2

    公开(公告)日:2005-05-31

    申请号:US10119077

    申请日:2002-04-10

    摘要: A probing device for electrically contacting with a plurality of electrodes 3, 6 aligned on an object 1 to be tested so as to transfer electrical signal therewith, comprising: a wiring sheet being formed by aligning a plurality of contact electrodes 21, 110b, corresponding to each of said electrodes, each being planted with projecting probes 20, 110a covered with hard metal films on basis of a conductor thin film 41 formed on one surface of an insulator sheet 22 of a polyimide film by etching thereof, while extension wiring 23, 110c for electrically connecting to said each of said contact electrodes being formed on basis of a conductor thin film formed on either said one surface or the other surface opposing thereto of said insulator sheet of the polyimide film; and means for giving contacting pressure for obtaining electrical conduction between said extension wiring and said object to be tested by contacting tips of said projecting contact probe formed onto said each contact electrode through giving pressuring force between said wiring sheet and said object to be tested.

    摘要翻译: 一种探针装置,用于与被测试物体1上对准的多个电极3,6电接触以便与其传输电信号,包括:布线板,其通过将多个接触电极21,110b对准而形成, 在每个所述电极上,每个被埋设有用硬金属膜覆盖的突出探针20,110a,该导电薄膜基于通过其蚀刻形成在聚酰亚胺膜的绝缘片22的一个表面上的导体薄膜41,而延伸布线23 ,110c,用于电连接到所述每个所述接触电极,所述接触电极基于形成在与所述聚酰亚胺膜的所述绝缘片相对的所述一个表面或另一表面上的导体薄膜形成; 以及用于通过在所述布线板和所述被测试物体之间施加加压力而使形成在所述每个接触电极上的所述突出接触探针的尖端接触,以提供接触压力以获得所述延伸布线和待测试物体之间的导电的装置。

    METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING A THIN FILM PROBE SHEET FOR USING THE SAME
    19.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING A THIN FILM PROBE SHEET FOR USING THE SAME 有权
    制造半导体集成电路装置的方法和制造薄膜探针片的方法

    公开(公告)号:US20100279502A1

    公开(公告)日:2010-11-04

    申请号:US12836580

    申请日:2010-07-15

    IPC分类号: H01L21/768

    CPC分类号: G01R3/00 G01R1/07342

    摘要: A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.

    摘要翻译: 通过选择性地在晶片的主表面上沉积在要形成金属膜的区域中的铜膜和当探针卡是在粘合环外部时将在粘合环外部的区域,制造具有足够高度的探针 制造的 形成金属膜,聚酰亚胺膜,互连,另一聚酰亚胺膜,另一互连和另外的聚酰亚胺膜; 然后取出晶片和铜膜。 根据本发明,在利用半导体集成电路器件的制造技术的情况下,使用具有以上述方式形成的探针的探测器(薄膜探针)进行探针测试时,可以防止探测器的破损, 待测试的晶圆。

    MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    20.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
    半导体集成电路器件的制造方法

    公开(公告)号:US20090130785A1

    公开(公告)日:2009-05-21

    申请号:US11719112

    申请日:2004-11-18

    IPC分类号: H01L21/66 G01R31/26

    CPC分类号: G01R1/0735 G01R3/00

    摘要: As the thickness of the card holder for preventing warping of a multilayered wiring substrate 1 is increased, there occurs a problem that a thin film sheet 2 is buried in a card holder and secure contact between probes 7 and test pads cannot be realized. For its prevention, the thin film sheet 2 and a bonding ring 6 are bonded in a state where a tensile force is applied only to the central region IA of the thin film sheet 2, and a tensile force is not applied to an outer peripheral region OA. Then, the height of the bonding ring 6 defining the height up to the probe surface of the thin film sheet 2 is increased, thereby increasing the height up to the probe surface of the thin film sheet 2.

    摘要翻译: 随着用于防止多层布线基板1翘曲的卡夹的厚度增加,存在薄膜片2被埋在卡夹中并且不能实现探针7和测试垫之间的牢固接触的​​问题。 为了防止,薄膜片2和接合环6在仅向薄膜片2的中心区域IA施加张力的状态下接合,并且拉伸力不施加到外围区域 OA。 然后,限定高达薄膜片2的探针表面的高度的接合环6的高度增加,从而增加高达薄膜片2的探针表面的高度。