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公开(公告)号：US08925479B2
公开(公告)日：2015-01-06
申请号：US13674723
申请日：2012-11-12
Inventor： Keung Hui , Chun-Lin Chang , Jong-I Mou
IPC: B05C13/00 , C23C14/48 , H01J37/302 , H01J37/304 , H01J37/317 , H01L21/265 , H01L21/66
CPC classification number: C23C14/48 , H01J37/302 , H01J37/304 , H01J37/3171 , H01J2237/30461 , H01J2237/31703 , H01L21/265 , H01L22/14
Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
Abstract translation: 公开了一种用于控制剂量分布的系统和方法。 一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。 期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。 速度可以被馈送到离子注入机中以控制晶片到束的速度，从而控制植入。
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公开(公告)号：US12009177B2
公开(公告)日：2024-06-11
申请号：US17171939
申请日：2021-02-09
Inventor： Ya-Chin King , Chrong-Jung Lin , Burn-Jeng Lin , Chien-Ping Wang , Shao-Hua Wang , Chun-Lin Chang , Li-Jui Chen
IPC: H01J37/304 , G03F7/00 , H01J37/30 , H01L27/144 , H01L31/02 , H01L31/113 , H01L31/18
CPC classification number: H01J37/304 , G03F7/70516 , G03F7/7055 , G03F7/70616 , H01J37/3002 , H01L27/1446 , H01L31/02005 , H01L31/1136 , H01L31/18
Abstract: A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.
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公开(公告)号：US09449889B2
公开(公告)日：2016-09-20
申请号：US14684953
申请日：2015-04-13
Inventor： Chun-Lin Chang , Chih-Hong Hwang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC: H01L21/66 , H01J37/244 , H01J37/317 , H01L21/265
CPC classification number: H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
Abstract: A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.
Abstract translation: 一种方法包括将晶片和环形光束轮廓仪放置在晶片保持器上，其中环形光束轮廓仪邻近晶片，与晶片保持器同时移动第一传感器和第二传感器，接收第一感测信号 以及分别来自第一传感器和第二传感器的第二检测信号，并且基于第一感测信号和第二感测信号调整由离子束发生器产生的离子束。
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公开(公告)号：US20150069913A1
公开(公告)日：2015-03-12
申请号：US14541314
申请日：2014-11-14
Inventor： Chih-Hong Hwang , Chun-Lin Chang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC: H01J37/317
CPC classification number: H01J37/3171 , H01J3/02 , H01J3/022 , H01J3/26 , H01J37/026 , H01J37/06 , H01J2237/0041 , H01J2237/31705
Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
Abstract translation: 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。
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公开(公告)号：US12147166B2
公开(公告)日：2024-11-19
申请号：US18210548
申请日：2023-06-15
Inventor： Chih-Ping Yen , Yen-Shuo Su , Jui-Pin Wu , Chun-Lin Chang , Han-Lung Chang , Heng-Hsin Liu
IPC: G03F7/00
Abstract: An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port. The inlet port introduces a mixing gas to an interior of the power amplifier during a cleaning operation so that the mixing gas contacts a surface of the catalyst having a build-up thereon. The mixing gas reacts with and removes the build-up by generating gaseous by-products. The exhaust port removes the gaseous by-products from the power amplifier.
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Patent Agency Ranking
公开(公告)号：US11675272B2
公开(公告)日：2023-06-13
申请号：US17460121
申请日：2021-08-27
Inventor： Chih-Ping Yen , Yen-Shuo Su , Chieh Hsieh , Shang-Chieh Chien , Chun-Lin Chang , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70033 , H05G2/006 , H05G2/008
Abstract: Supersonic gas jets are provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by the lithography process away from a scanner side and towards a debris collection device. The gas jets can be positioned in a variety of useful orientations, with adjustable gas flow velocity and gas density in order to prevent up to nearly 100% of the tin debris from migrating to the reticle on the scanner side.
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公开(公告)号：US20150221561A1
公开(公告)日：2015-08-06
申请号：US14684953
申请日：2015-04-13
Inventor： Chun-Lin Chang , Chih-Hong Hwang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC: H01L21/66 , H01L21/265
CPC classification number: H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
Abstract: A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.
Abstract translation: 一种方法包括将晶片和环形光束轮廓仪放置在晶片保持器上，其中环形光束轮廓仪邻近晶片，与晶片保持器同时移动第一传感器和第二传感器，接收第一感测信号 以及分别来自第一传感器和第二传感器的第二检测信号，并且基于第一感测信号和第二感测信号调整由离子束发生器产生的离子束。
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公开(公告)号：US09006676B2
公开(公告)日：2015-04-14
申请号：US13918731
申请日：2013-06-14
Inventor： Chun-Lin Chang , Chih-Hong Hwang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC: H01L21/66 , H01J37/244 , H01J37/317
CPC classification number: H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.
Abstract translation: 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号来确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。
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公开(公告)号：US12133319B2
公开(公告)日：2024-10-29
申请号：US17562819
申请日：2021-12-27
Inventor： Ting-Ya Cheng , Chun-Lin Chang , Li-Jui Chen , Han-Lung Chang
CPC classification number: H05G2/008 , G02B7/185 , G02B26/06 , G02B26/0858 , G02B27/0933 , G02B27/0977 , G03F7/70033 , H05G2/005
Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.
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公开(公告)号：US09865429B2
公开(公告)日：2018-01-09
申请号：US14541314
申请日：2014-11-14
Inventor： Chih-Hong Hwang , Chun-Lin Chang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC: H01J3/02 , H01J37/317 , H01J3/26 , H01J37/02 , H01J37/06
CPC classification number: H01J37/3171 , H01J3/02 , H01J3/022 , H01J3/26 , H01J37/026 , H01J37/06 , H01J2237/0041 , H01J2237/31705
Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
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