公开(公告)号：US20230420294A1

公开(公告)日：2023-12-28

申请号：US18252408

申请日：2021-11-02

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Nobutake KABUKI ,  Ryota IFUKU ,  Takashi MATSUMOTO

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458 ,  C23C16/02 ,  C23C16/26 ,  C23C16/50 ,  C01B32/186

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01J37/32715 ,  C23C16/4583 ,  C23C16/02 ,  C23C16/26 ,  C23C16/50 ,  C01B32/186 ,  H01J2237/20235 ,  H01J2237/334

Abstract: A substrate processing method of processing a substrate having a base film includes a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins.

公开(公告)号：US20230042099A1

公开(公告)日：2023-02-09

申请号：US17757906

申请日：2020-11-26

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Nobutake KABUKI ,  Ryota IFUKU ,  Masahito SUGIURA ,  Hirokazu UEDA

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/768 ,  H01L21/285 ,  C23C16/26 ,  C23C16/511 ,  C01B32/186

Abstract: A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

公开(公告)号：US20230028816A1

公开(公告)日：2023-01-26

申请号：US17786745

申请日：2020-12-17

Applicant: Tokyo Electron Limited

Inventor： Zeyuan NI ,  Takashi MATSUMOTO ,  Ryota IFUKU

IPC: H01L21/768 ,  H01L21/67 ,  H01J37/32 ,  C23C14/18 ,  C23C16/26

Abstract: A film forming method includes: preparing a substrate that includes a base substrate and a first conductive film that is formed on the base substrate; forming, on the first conductive film, a composite layer that includes layers of graphene and includes, as dopant atoms, a transition metal from 4th period to 6th period in a periodic table, excluding lanthanoids, between the layers of graphene; and forming, on the composite layer, a second conductive film which is electrically connected to the first conductive film via the composite layer.

公开(公告)号：US20180057933A1

公开(公告)日：2018-03-01

申请号：US15689307

申请日：2017-08-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO

IPC: C23C16/26 ,  C23C14/06 ,  C23C14/02 ,  C23C16/02 ,  C01B32/186

CPC classification number: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C23C14/021 ,  C23C14/0605 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/46 ,  C23C16/54 ,  C23C16/56 ,  H01L23/53276 ,  Y02P20/584 ,  Y10S977/734 ,  Y10S977/843

Abstract: There is provided a method for producing graphene which includes a first growth step of supplying a carbon-containing gas into a chamber in which a metal catalyst is disposed to grow graphene on a surface of the metal catalyst, an activation step of supplying a process gas containing an oxygen gas or a hydrogen gas into the chamber in which the metal catalyst having the graphene grown on the surface thereof is disposed to reactivate the metal catalyst, and a second growth step of supplying the carbon-containing gas into the chamber in which the reactivated metal catalyst is disposed to regrow the graphene on the surface of the metal catalyst.

公开(公告)号：US20160251757A1

公开(公告)日：2016-09-01

申请号：US15151760

申请日：2016-05-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Munehito KAGAYA

IPC: C23C16/26 ,  C01B31/02

CPC classification number: C23C16/26 ,  C01B32/16 ,  C01B32/162 ,  C01B2202/08 ,  H01L21/28556 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A carbon nanotube producing method, which is capable of realizing a low resistant depth-wise wiring. An acetylene gas is first supplied as a carbon-containing gas and subsequently, an ethylene gas is supplied as the carbon-containing gas such that carbon nanotubes are produced.

Abstract translation: 一种碳纳米管制造方法，其能够实现低阻抗深度线。 首先将乙炔气体作为含碳气体供给，接着，作为含碳气体供给乙烯气体，制造碳纳米管。

公开(公告)号：US20160067680A1

公开(公告)日：2016-03-10

申请号：US14939170

申请日：2015-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Yusaku KASHIWAGI

IPC: B01J23/755 ,  H01L21/768 ,  H01L23/532

CPC classification number: B01J23/755 ,  H01L21/76823 ,  H01L21/76838 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A graphene patterning method for forming a graphene of predetermined pattern includes bringing a patterning member in which a catalyst metal layer of the predetermined pattern is formed into contact with a substrate having a graphene oxide film. In bringing the patterning member, the catalyst metal layer is brought into contact with the graphene oxide film.

Abstract translation: 用于形成预定图案的石墨烯的石墨烯图案化方法包括将其中形成有预定图案的催化剂金属层的图案形成部件与具有石墨烯氧化膜的基板接触。 在使图形部件移动时，催化剂金属层与氧化石墨烯膜接触。

公开(公告)号：US20160046492A1

公开(公告)日：2016-02-18

申请号：US14779577

申请日：2014-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Kenjiro KOIZUMI

IPC: C01B31/02 ,  H01L21/768 ,  H01L21/285

CPC classification number: C01B32/164 ,  B01J23/462 ,  B01J23/52 ,  B01J23/745 ,  B01J23/75 ,  B01J23/755 ,  B01J35/0013 ,  B01J37/349 ,  C01B32/162 ,  H01L21/28556 ,  H01L21/76876 ,  H01L2221/1094

Abstract: Provided is a method for growing carbon nanotubes that enables the growth of high-density carbon nanotubes. A high frequency bias voltage is applied to a loading table on which a wafer W having a catalytic metal layer is mounted to generate a bias potential on the surface of the wafer W, and oxygen plasma is used to micronize the catalytic metal layer to form catalytic metal particles. Thereafter, hydrogen plasma is used to reduce the surface of the catalytic metal particles to form activated catalytic metal particles having an activated surface. By using each activated catalytic metal particles as a nucleus, carbon nanotubes are formed.

Abstract translation: 提供一种用于生长能够生长高密度碳纳米管的碳纳米管的方法。 将高频偏置电压施加到其上安装有具有催化金属层的晶片W的负载台，以在晶片W的表面上产生偏置电位，并使用氧等离子体来微调催化金属层以形成催化剂 金属颗粒。 此后，使用氢等离子体来减少催化金属颗粒的表面以形成具有活化表面的活化的催化金属颗粒。 通过使用每个活化的催化金属颗粒作为核，形成碳纳米管。

公开(公告)号：US20150251913A1

公开(公告)日：2015-09-10

申请号：US14634948

申请日：2015-03-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Kazuya DOBASHI

IPC: C01B31/04 ,  H01J37/305

CPC classification number: H01J37/3056 ,  C01B32/184 ,  C01B32/194 ,  C01B2204/06 ,  C01B2204/22 ,  H01J2237/0245 ,  H01J2237/3151

Abstract: A graphene machining method includes irradiating a GCB (Gas Cluster Beam) onto graphene.

Abstract translation: 石墨烯加工方法包括将GCB（气体簇束）照射到石墨烯上。

公开(公告)号：US20140199829A1

公开(公告)日：2014-07-17

申请号：US14153788

申请日：2014-01-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Yusaku KASHIWAGI

IPC: H01L21/285

CPC classification number: B01J23/755 ,  H01L21/76823 ,  H01L21/76838 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A graphene patterning method for forming a graphene of predetermined pattern includes bringing a patterning member in which a catalyst metal layer of the predetermined pattern is formed into contact with a substrate having a graphene oxide film. In bringing the patterning member, the catalyst metal layer is brought into contact with the graphene oxide film.

Abstract translation: 用于形成预定图案的石墨烯的石墨烯图案化方法包括将其中形成有预定图案的催化剂金属层的图案形成部件与具有石墨烯氧化膜的基板接触。 在使图形部件移动时，催化剂金属层与氧化石墨烯膜接触。

公开(公告)号：US20230080956A1

公开(公告)日：2023-03-16

申请号：US17931930

申请日：2022-09-14

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Ryota IFUKU ,  Hiroki YAMADA ,  Haruhiko FURUYA

IPC: H01L21/3205 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677

Abstract: A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.