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    Mechanisms for forming image-sensor device with epitaxial isolation feature
    13.
    发明授权
    Mechanisms for forming image-sensor device with epitaxial isolation feature 有权

    公开(公告)号：US10886320B2

    公开(公告)日：2021-01-05

    申请号：US16387989

    申请日：2019-04-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-I Hsu ,  Feng-Chi Hung ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    IPC: H01L27/146

    Abstract: An image-sensor device includes a substrate including a pixel region and a logic region. A logic transistor is disposed in the logic region and is surrounded by a logic isolation feature. A radiation-sensing region is disposed in the pixel region of the substrate. An epitaxial pixel isolation feature is disposed in the pixel region and surrounds the radiation-sensing region. A doped region with a same doping polarity as the radiation-sensing region is located between a bottom of the radiation-sensing region and the back surface of the substrate. The epitaxial pixel isolation feature is in direct contact with the doped region. The doped region extends continuously under the pixel region and the logic region. The epitaxial pixel isolation feature is in direct contact with the doped region, and the logic isolation feature is spaced apart from the doped region.

    Image Sensor Device and Method of Forming Same
    14.
    发明申请
    Image Sensor Device and Method of Forming Same 审中-公开

    公开(公告)号：US20190244999A1

    公开(公告)日：2019-08-08

    申请号：US16388071

    申请日：2019-04-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

    IPC: H01L27/146 ,  H01L23/48

    CPC classification number: H01L27/14636 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14683

    Abstract: An image sensor device includes a pixel array, a control circuit, an interconnect structure, and a conductive layer. The pixel array is disposed on a device substrate within a pixel region. The control circuit disposed on the device substrate within a circuit region, the control circuit being adjacent and electrically coupled to the pixel array. The interconnect structure overlies and electrically connects the control circuit and the pixel array. The interconnect structure includes interconnect metal layers separated from each other by inter-metal dielectric layers and vias that electrically connect between metal traces of the interconnect layers. The conductive layer disposed over the interconnect structure and electrically connected to the interconnect structure by an upper via disposed through an upper inter-metal dielectric layer therebetween. The conductive layer extends laterally within outermost edges of the interconnect structure and within the pixel region and the circuit region.

    Hybrid bond pad structure
    19.
    发明授权
    Hybrid bond pad structure 有权

    公开(公告)号：US11024602B2

    公开(公告)日：2021-06-01

    申请号：US16367720

    申请日：2019-03-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Sin-Yao Huang ,  Chun-Chieh Chuang ,  Ching-Chun Wang ,  Sheng-Chau Chen ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Yung-Lung Lin

    IPC: H01L25/065 ,  H01L23/498 ,  H01L25/00 ,  H01L27/146 ,  H01L23/00 ,  H01L23/52

    Abstract: In some embodiments, the present disclosure relates to a method of forming a multi-dimensional integrated chip. The method includes forming a first plurality of interconnect layers within a first dielectric structure on a front-side of a first substrate and forming a second plurality of interconnect layers within a second dielectric structure on a front-side of a second substrate. A first redistribution layer coupled to the first plurality of interconnect layers is bonded to a second redistribution layer coupled to the second plurality of interconnect layers along an interface. A recess is formed within a back-side of the second substrate and over the second plurality of interconnect layers. A bond pad is formed within the recess. The bond pad is laterally separated from the first redistribution layer by a non-zero distance.

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