公开(公告)号：US08012837B2

公开(公告)日：2011-09-06

申请号：US12716403

申请日：2010-03-03

申请人： Johji Nishio ,  Chiharu Ota ,  Takuma Suzuki ,  Hiroshi Kono ,  Makoto Mizukami ,  Takashi Shinohe

发明人： Johji Nishio ,  Chiharu Ota ,  Takuma Suzuki ,  Hiroshi Kono ,  Makoto Mizukami ,  Takashi Shinohe

IPC分类号： H01L21/336 ,  H01L21/425 ,  H01L21/265

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/0495 ,  H01L21/30604 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film.

摘要翻译： 提供了即使当使用包括缺陷的碳化硅半导体时也能够实现大规模半导体器件的高产率的半导体器件的制造方法。 制造半导体器件的方法包括：在碳化硅半导体衬底上外延生长碳化硅半导体层的步骤; 抛光所述碳化硅半导体层的表面的步骤; 在抛光步骤之后将杂质离子注入到碳化硅半导体层中的步骤; 进行热处理以活化杂质的步骤; 在进行热处理的步骤之后，在碳化硅半导体层的表面上形成第一热氧化膜的工序; 化学去除第一热氧化膜的步骤; 以及在所述碳化硅半导体膜上形成电极层的步骤。

公开(公告)号：US07987029B2

公开(公告)日：2011-07-26

申请号：US12094345

申请日：2006-12-21

申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

IPC分类号： B60W50/06 ,  B60W10/00 ,  B60W10/04 ,  B60W10/10 ,  B60W10/18 ,  B60W10/20 ,  B60W30/02 ,  B60T8/1755 ,  B62D6/00

CPC分类号： B62D6/04 ,  B60T8/1755 ,  B60T2230/02 ,  B60T2270/86 ,  B60W2050/0033 ,  B62D6/003 ,  Y10S903/93

摘要： A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law based on a state amount error which is a difference between a reference state amount determined by a vehicle model and an actual state amount of an actual vehicle such that the state amount error is approximated to zero. An actuator device of the actual vehicle and the model vehicle, respectively, are then operated based on the control inputs. The FB distribution law estimates an external force acting on the actual vehicle due to a control input for operating an actual vehicle actuator, and determines a control input for operating the vehicle model on the basis of the estimated value and a basic value of a control input for operating the vehicle model for approximating the state amount error to zero.

摘要翻译： 用于操作实际车辆致动器的控制输入和用于操作车辆模型的控制输入由FB分布定律确定，该FB分布定律基于作为由车辆模型确定的参考状态量与实际状态量之间的差的状态量误差 的实际车辆，使得状态量误差近似为零。 然后分别基于控制输入来操作实际车辆和模型车辆的致动器装置。 FB分布法估计由于用于操作实际车辆致动器的控制输入而作用在实际车辆上的外力，并且基于估计值和控制输入的基本值来确定用于操作车辆模型的控制输入 用于将用于将状态量误差近似的车辆模型操作为零。

公开(公告)号：US20090118905A1

公开(公告)日：2009-05-07

申请号：US12092003

申请日：2006-12-21

申请人： Toru Takenaka ,  Hiroshi Kono ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Shuji Shiraishi ,  Yukihiro Orimoto

发明人： Toru Takenaka ,  Hiroshi Kono ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Shuji Shiraishi ,  Yukihiro Orimoto

IPC分类号： B62D6/00

CPC分类号： B62D6/04 ,  B60T8/17552 ,  B60T8/17555 ,  B60T2230/02 ,  B60T2260/09 ,  B60T2270/86 ,  B60W10/04 ,  B60W10/10 ,  B60W10/18 ,  B60W10/20 ,  B60W40/064 ,  B60W40/101 ,  B60W50/06 ,  B60W2050/0028 ,  B60W2050/0033 ,  B60W2050/0034 ,  B62D6/003

摘要： A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law based on a difference between a reference state amount determined by a vehicle model and an actual state amount of an actual vehicle such that the state amount error is approximated to zero, and then an actuator device of the actual vehicle and the model vehicle are operated based on the control inputs. The FB distribution law determines a control input for operating the model such that a state amount error is approximated to zero while restraining a predetermined restriction object amount from deviating from a permissible range. A vehicle control device capable of enhancing robustness against disturbance factors or their changes while performing operation control of actuators that is as suited to behaviors of an actual vehicle as possible is provided.

摘要翻译： 用于操作实际车辆致动器的控制输入和用于操作车辆模型的控制输入由FB分布定律基于由车辆模型确定的参考状态量与实际车辆的实际状态量之间的差异来确定，使得 状态量误差近似为零，然后基于控制输入来操作实际车辆和模型车辆的致动器装置。 FB分配规则确定用于操作模型的控制输入，使得状态量误差近似为零，同时限制预定的限制对象量偏离允许范围。 提供一种车辆控制装置，其能够在执行适合于实际车辆的行为的执行器的操作控制的同时增强对干扰因素或其变化的鲁棒性。

公开(公告)号：US20090078942A1

公开(公告)日：2009-03-26

申请号：US12199848

申请日：2008-08-28

申请人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Johji Nishio

发明人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Johji Nishio

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A semiconductor device includes an SiC substrate, a first SiC layer of first conductivity provided on the substrate, a second SiC layer of second conductivity provided on the first SiC layer, first and second SiC regions provided in the second SiC layer, facing each other and having the same depth, a third SiC region extending through the first SiC region and reaching the first SiC layer, a gate insulator formed on the first and second SiC regions and the second SiC layer interposed therebetween, a gate electrode formed on the gate insulator, a first contact of first conductivity formed on the second SiC region, a second contact of second conductivity formed on the second SiC region, reaching the second SiC layer through the second SiC region, and a top electrode formed on the first and second contacts, and a bottom electrode formed on a back surface of the substrate.

摘要翻译： 半导体器件包括SiC衬底，设置在衬底上的第一导电性第一SiC层，设置在第一SiC层上的第二导电性第二SiC层，设置在第二SiC层中的第一和第二SiC区域彼此面对， 具有相同深度的第三SiC区域延伸穿过第一SiC区域并到达第一SiC层，形成在第一和第二SiC区域上的第二SiC层和形成在栅极绝缘体上的第二SiC层的栅绝缘体， 形成在第二SiC区域上的第一导电体的第一接触，形成在第二SiC区域上的第二导电体的第二接触通过第二SiC区域到达第二SiC层，以及形成在第一和第二接触体上的顶部电极，以及 形成在基板的背面上的底部电极。

公开(公告)号：US20070247841A1

公开(公告)日：2007-10-25

申请号：US11709756

申请日：2007-02-23

申请人： Hiroshi Kono ,  Masashi Ishida ,  Saiki Yamamoto

发明人： Hiroshi Kono ,  Masashi Ishida ,  Saiki Yamamoto

IPC分类号： F21V15/01 ,  F21V9/00

CPC分类号： H01L33/486 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/01322 ,  Y10S362/80 ,  H01L2924/00

摘要： A light emitting device comprises: a light emitting element; a plurality of lead frames to which the light emitting element is electrically connected; and a package that includes in its interior at least part of said lead frames which protrude outward at one end, that is equipped with an opening for taking off light from the light emitting element, and that extends in the lengthwise direction, wherein a concave portion is formed in the outer surface of at least part of the package wall, the lead frames protruding outward from the package are accommodated in this concave portion, and the walls that constitute said opening and are across from each other in the widthwise direction of the package comprise at least a first wall that is across from the light emitting element, a second wall that is raised up by a step from the first wall, and a third wall that links the first wall and the second wall, and the second wall and third wall are formed thicker than the first wall.

摘要翻译： 发光器件包括：发光元件; 发光元件电连接的多个引线框架; 以及在其内部包括在一端向外突出的所述引线框架的至少一部分的封装，所述引线框架配备有用于从所述发光元件取出光并且沿长度方向延伸的开口，其中凹部 形成在包装壁的至少一部分的外表面上，从包装体向外突出的引线框架容纳在该凹部中，并且构成所述开口的壁在包装的宽度方向上彼此相对 至少包括从所述发光元件穿过的第一壁，从所述第一壁向上升高一级的第二壁和连接所述第一壁和所述第二壁的第三壁，以及所述第二壁和所述第三壁 壁形成比第一壁更厚。

公开(公告)号：US5280322A

公开(公告)日：1994-01-18

申请号：US77498

申请日：1993-06-17

申请人： Hiroshi Kono

发明人： Hiroshi Kono

IPC分类号： G03G15/00 ,  G03G15/16 ,  G03G21/00

CPC分类号： G03G15/70 ,  G03G15/1655

摘要： An image forming apparatus includes an image forming unit which has a rotating photoconductor, and a transfer unit disposed adjacent the photoconductor which retains an image-formation sheet on its circumferential surface. It further includes a sheet feeding path for feeding a sheet to the transfer unit, a sheet discharging path for discharging a sheet from the transfer unit, a first sensor for detecting a jammed-sheet condition in the sheet feeding path, a second sensor for detecting a jammed-sheet condition in the sheet discharging path, and assume function which assumes a paper jam in the transfer unit in conjunction with the determination of the first detecting sensor and/or the second detecting sensor. Accordingly, the apparatus does not neglect to cope with a sheet remaining on the transfer unit under a halt condition due to the sheet-jam. Thus obstruction to a following copying operation by a sheet remaining on the transfer unit is averted after the jammed-sheet condition is remedied.

摘要翻译： 图像形成装置包括具有旋转的感光体的图像形成单元和邻近感光体设置的转印单元，所​​述转印单元将图像形成片材保持在其圆周表面上。 它还包括用于将片材供给到转印单元的片材馈送路径，用于从转印单元排出片材的片材排出路径，用于检测片材进给路径中的卡纸状态的第一传感器，用于检测片材进给检测的第二传感器 并且具有与第一检测传感器和/或第二检测传感器的确定一起发生在传送单元中卡纸的功能。 因此，该设备在由于卡纸而处于停止状态下不会忽略剩余在转印单元上的纸张。 因此，在补救了卡纸状态之后，避免了由残留在转印单元上的纸张进行的后续复印操作的阻碍。

公开(公告)号：US09029869B2

公开(公告)日：2015-05-12

申请号：US13034264

申请日：2011-02-24

申请人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Makoto Mizukami ,  Takuma Suzuki ,  Johji Nishio

发明人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Makoto Mizukami ,  Takuma Suzuki ,  Johji Nishio

IPC分类号： H01L29/15 ,  H01L29/739 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7395 ,  H01L29/1033 ,  H01L29/66333

摘要： One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface.

摘要翻译： 半导体器件的一个实施例包括：包含第一和第二主表面的碳化硅衬底; 第一主表面上的第一导电型碳化硅层; 在所述第一碳化硅层的表面处的第二导电型第一碳化硅区域; 在第一碳化硅区域的表面处的第一导电型第二碳化硅区域; 在第一碳化硅区域的表面处的第二导电型第三碳化硅区域; 在第一碳化硅区域和第二碳化硅区域之间形成的杂质浓度高于第一碳化硅区域的第二导电型第四碳化硅区域; 栅极绝缘体; 形成在栅极绝缘体上的栅电极; 层间绝缘体; 连接到所述第二碳化硅区域和所述第三碳化硅区域的第一电极; 和在第二主表面上的第二电极。

公开(公告)号：US08932926B2

公开(公告)日：2015-01-13

申请号：US12554369

申请日：2009-09-04

申请人： Hiroshi Kono ,  Takuma Suzuki

发明人： Hiroshi Kono ,  Takuma Suzuki

IPC分类号： H01L21/336 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L21/0465 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a semiconductor device, includes forming a gate oxide film on an SiC region by a first thermal oxidation treatment in a first oxidizing atmosphere, performing a second thermal oxidation treatment at an oxidation speed of at most 5 nm/hour in a second oxidizing atmosphere having a lower oxygen concentration than the first oxidizing atmosphere, to increase film thickness of the gate oxide film, after the first thermal oxidation treatment, and forming a gate electrode on the gate oxide film with the increased film thickness.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在第一氧化气氛中，通过第一热氧化处理，在SiC区域上形成栅极氧化膜，在第二氧化处理中以至少5nm /小时的氧化速度进行第二次热氧化处理 具有比第一氧化气氛低的氧浓度的氧化气氛，以在第一热氧化处理之后增加栅极氧化膜的膜厚度，并且在栅极氧化膜上形成具有增加的膜厚度的栅电极。

公开(公告)号：US08569795B2

公开(公告)日：2013-10-29

申请号：US13217472

申请日：2011-08-25

申请人： Hiroshi Kono ,  Yukio Nakabayashi ,  Takashi Shinohe ,  Makoto Mizukami

发明人： Hiroshi Kono ,  Yukio Nakabayashi ,  Takashi Shinohe ,  Makoto Mizukami

IPC分类号： H01L33/32 ,  H01L29/80 ,  H01L29/16 ,  H01L27/11 ,  H01L27/10

CPC分类号： H01L29/7802 ,  H01L21/049 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/45 ,  H01L29/4966 ,  H01L29/66068 ,  H01L29/7813

摘要： A semiconductor device of an embodiment includes: a silicon carbide substrate including first and second principal surfaces; a first conductive-type first silicon carbide layer provided on the first principal surface of the silicon carbide substrate; a second conductive-type first silicon carbide region formed on a surface of the first silicon carbide layer; a first conductive-type second silicon carbide region formed on a surface of the first silicon carbide region; a second conductive-type third silicon carbide region formed on the surface of the first silicon carbide region; a gate insulating film continuously formed on the surfaces of the first silicon carbide layer, the first silicon carbide region, and the second silicon carbide region; a first electrode formed of silicon carbide formed on the gate insulating film; a second electrode formed on the first electrode; an interlayer insulating film for covering the first and second electrodes; a third electrode electrically connected to the second silicon carbide region and the third silicon carbide region; and a fourth electrode formed on the second principal surface of the silicon carbide substrate.

摘要翻译： 实施例的半导体器件包括：碳化硅衬底，其包括第一和第二主表面; 设置在碳化硅衬底的第一主表面上的第一导电型第一碳化硅层; 形成在所述第一碳化硅层的表面上的第二导电型第一碳化硅区; 形成在所述第一碳化硅区域的表面上的第一导电型第二碳化硅区域; 形成在所述第一碳化硅区域的表面上的第二导电型第三碳化硅区域; 连续形成在所述第一碳化硅层，所述第一碳化硅区域和所述第二碳化硅区域的表面上的栅极绝缘膜; 形成在所述栅极绝缘膜上的由碳化硅形成的第一电极; 形成在第一电极上的第二电极; 用于覆盖第一和第二电极的层间绝缘膜; 电连接到第二碳化硅区域和第三碳化硅区域的第三电极; 以及形成在碳化硅衬底的第二主表面上的第四电极。

公开(公告)号：US08027775B2

公开(公告)日：2011-09-27

申请号：US12097130

申请日：2006-12-21

申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

IPC分类号： B60W30/02 ,  B60T8/172

CPC分类号： B60T8/17552 ,  B60T2230/02 ,  B60W10/04 ,  B60W10/10 ,  B60W10/18 ,  B60W40/10 ,  B60W40/101 ,  B60W2050/0033 ,  B60W2050/0034 ,  B60W2520/20 ,  B60W2530/20 ,  B62D6/003

摘要： A basic required manipulated variable Mfbdmd_a is determined on the basis of a state amount error, which is the difference between a state amount of a motion of an actual vehicle 1 and a reference state amount, then a driving/braking force manipulation control input Fxfbdmd_n of a wheel is determined on the basis of the above basic required manipulated variable. At this time, a change in a driving/braking force operation control input Fxdmd_n of a front wheel and a rear wheel, respectively, of a particular set is made to be proportional to a change in the basic required manipulated variable Mfbdmd_a, and the ratio (gain) of a change in Fxdmd_n with respect to a change in Mfbdmd_a is made to change on the basis of gain adjustment parameters, such as side slip angles βf_act and βr_act. This makes it possible to properly control a motion of the actual vehicle to a desired motion by properly manipulating a road surface reaction force acting on a front wheel of the vehicle and a road surface reaction force acting on a rear wheel.

摘要翻译： 基于作为实际车辆1的运动的状态量与基准状态量之间的差的状态量误差确定基本所需的操作变量Mfbdmd_a，然后基于状态量误差来确定驱动/制动力操作控制输入Fxfbdmd_n 基于上述基本需要的操纵变量确定车轮。 此时，分别将特定组的前轮和后轮的驱动/制动力操作控制输入Fxdmd_n的变化与基本要求操作量Mfbdmd_a的变化成比例，并且比率 根据增益调整参数（例如侧滑角＆bgr; f_act和＆bgr; r_act），使Fxdmd_n相对于Mfbdmd_a的变化的变化的增益（增益）变化。 通过适当地操作作用在车辆的前轮上的路面反作用力和作用在后轮上的路面反作用力，能够将实际车辆的运动适当地控制为期望的运动。