公开(公告)号：US5457726A

公开(公告)日：1995-10-10

申请号：US321825

申请日：1994-10-06

申请人： Kunihiro Miyazaki

发明人： Kunihiro Miyazaki

IPC分类号： G01N23/223 ,  G21K7/00 ,  H01L21/66

CPC分类号： G01N23/223 ,  G01N2223/076

摘要： A sample is mounted on a sample base. A detector is provided on the sample base, and detects a fluorescent X-ray generated from the sample, and a scattered X-ray of an incident X-ray when the sample is irradiated with the incident X-ray. A controller controls the sample base and an operation of the detector. The controller sequentially changes an incident angle of the incident X-ray to the sample so as to detect the fluorescent X-ray generated from the sample at each incident angle, and the scattered X-ray of the incident X-ray. Next, the controller obtains the relationship between the incident angle of the incident X-ray to the sample and a standard value obtained by standardizing intensity of the fluorescent X-ray by intensity of the scattered X-ray. Then, the controller corrects the incident angle of the incident X-ray to the sample based on the obtained relationship. Moreover, the controller corrects the positional relationship between an irradiation position of the incident X-ray to the sample and said detector based on the obtained relationship. In this case, the correction of the incident angle of the incident X-ray to said sample is made after ending the correction of the positional relationship.

摘要翻译： 样品安装在样品底座上。 检测器设置在样品基底上，并且检测从样品产生的荧光X射线和当入射的X射线照射样品时入射的X射线的散射的X射线。 控制器控制样品基底和检测器的操作。 控制器顺序地将入射的X射线的入射角度改变为样品，以便检测从每个入射角度的样品产生的荧光X射线和入射的X射线的散射X射线。 接下来，控制器获得入射的X射线与样品的入射角与通过散射X射线的强度标准化荧光X射线的强度而获得的标准值之间的关系。 然后，控制器基于获得的关系来校正入射的X射线对样品的入射角。 此外，控制器基于获得的关系来校正入射X射线与样品的照射位置和所述检测器之间的位置关系。 在这种情况下，在结束位置关系的校正之后，进行入射X射线对所述样品的入射角的校正。

公开(公告)号：US4915710A

公开(公告)日：1990-04-10

申请号：US324057

申请日：1989-03-16

申请人： Kunihiro Miyazaki ,  Ken Ishitobi ,  Yoshinobu Yamaguchi

发明人： Kunihiro Miyazaki ,  Ken Ishitobi ,  Yoshinobu Yamaguchi

IPC分类号： B24D3/00 ,  B24D3/34 ,  C09G1/02 ,  C09K3/14 ,  C23F3/00 ,  G11B5/84

CPC分类号： C23F3/00 ,  B24D3/00 ,  B24D3/346 ,  C09G1/02 ,  C09K3/1463

摘要： An abrasive composition particularly suitable for polishing an aluminum-based substrate for a magnetic recording disc, the composition comprising: an alumineous abrasive, preferably in an amount of 3 to 25% by weight; a polishing accelerator of gluconic and/or lactic acid, preferably in an amount of 0.1 to 3% by weight; optionally with sodium gluconate and/or sodium lactate in an amount of 0.1 to 3% by weight; colloidal alumina, preferably in an amount of 0.1 to 5% by weight; and water, the composition typically having a pH of 3 to 5.

摘要翻译： 一种特别适用于抛光用于磁记录盘的铝基底材的磨料组合物，该组合物包含：优选3至25重量％的铝制磨料; 葡萄糖酸和/或乳酸的抛光促进剂，优选为0.1至3重量％的量; 任选地以0.1至3重量％的量的葡萄糖酸钠和/或乳酸钠; 胶体氧化铝，优选为0.1至5重量％的量; 和水，组合物通常具有3至5的pH。

公开(公告)号：US07635601B2

公开(公告)日：2009-12-22

申请号：US11520589

申请日：2006-09-14

申请人： Tsuyoshi Matsumura ,  Yoshihiro Uozumi ,  Kunihiro Miyazaki

发明人： Tsuyoshi Matsumura ,  Yoshihiro Uozumi ,  Kunihiro Miyazaki

IPC分类号： H01L21/66

CPC分类号： H01L22/14 ,  H01L21/02063 ,  Y10S134/902

摘要： The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

摘要翻译： 本公开涉及一种半导体器件的制造方法，包括干法蚀刻半导体衬底或形成在半导体衬底上的结构; 将溶液供应到半导体衬底上; 测量供应溶液的电阻率或电导率; 并且当去除附着在半导体衬底或结构上的蚀刻残留材料时，基于溶液的电阻率或电导率，提供用于将蚀刻残留材料去除预定时间的去除溶液。

公开(公告)号：US07365012B2

公开(公告)日：2008-04-29

申请号：US11201266

申请日：2005-08-10

申请人： Hiroyuki Matsuo ,  Toshiki Nakajima ,  Kunihiro Miyazaki

发明人： Hiroyuki Matsuo ,  Toshiki Nakajima ,  Kunihiro Miyazaki

IPC分类号： H01L21/302

CPC分类号： H01L21/823481 ,  H01L21/30604 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76224 ,  H01L29/66575

摘要： An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.

摘要翻译： 公开了一种使用含有氟化氢和臭氧的蚀刻剂对基材进行蚀刻处理的蚀刻方法。 基材具有以硅为主要材料的第一区域和由SiO 2主要材料构成的第二区域。 蚀刻方法包括以下步骤：制备基材; 以及将所述蚀刻剂供应到所述基材上以形成所述第一和第二区域之间的台阶，其特征在于，所述蚀刻剂的硅的蚀刻速率高于所述蚀刻剂的SiO 2的蚀刻速率 蚀刻剂，使得第一区域的表面的高度低于第二区域的表面的高度。

公开(公告)号：US06444047B1

公开(公告)日：2002-09-03

申请号：US09477017

申请日：2000-01-03

申请人： Kunihiro Miyazaki

发明人： Kunihiro Miyazaki

IPC分类号： B08B300

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/04 ,  Y10S134/902

摘要： A method of cleaning a semiconductor substrate is disclosed. The method comprises setting a substrate to-be-treated substantially in parallel to ends of multi-nozzles including an inner tube nozzle and an outer tube nozzle to oppose each other, cleaning the substrate by discharging, to the substrate, a chemical fluid, a combination of chemical fluid and a gas, pure water, or a combination of pure water and a gas through the outer tube nozzle and simultaneously discharging a chemical fluid, a combination of a chemical fluid and a gas, pure water, or a combination of pure water and a gas through the inner tube nozzle, and washing the substrate by discharging pure water to the substrate through at least one of the inner tube nozzle and the outer tube nozzle.

摘要翻译： 公开了一种清洁半导体衬底的方法。 该方法包括将基本上平行于包括内管喷嘴和外管喷嘴的多个喷嘴的端部进行处理的基板相对对置，通过将基板排出到化学流体，清洗基板来清洁基板 化学流体与气体，纯净水或纯水和气体的组合通过外管喷嘴组合，同时排出化学液体，化学液体和气体的组合，纯净水或纯净的组合 水和气体通过内管喷嘴进行洗涤，并且通过内管喷嘴和外管喷嘴中的至少一个将纯水排出到基板来洗涤基板。

公开(公告)号：US5868855A

公开(公告)日：1999-02-09

申请号：US612413

申请日：1996-03-07

申请人： Yuji Fukazawa ,  Kunihiro Miyazaki

发明人： Yuji Fukazawa ,  Kunihiro Miyazaki

IPC分类号： B08B3/08 ,  C09K13/08 ,  C23F1/08 ,  C23F1/24 ,  C23G1/12 ,  C23G3/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/302 ,  B08B6/00

CPC分类号： H01L21/02052

摘要： A silicon wafer is set in a processing bath and an HF water solution and ozone water are respectively supplied from an HF line and ozone water line into the processing bath via an HF valve and ozone water valve to create a mixture. The mixture contains an HF water solution with a concentration of 0.01% to 1% and ozone water with a concentration of 0.1 ppm to 20 ppm, has substantially the same etching rate for silicon and for silicon oxide film and is used at a temperature in the range of 10.degree. to 30.degree. C. The silicon wafer and the silicon oxide film formed on part of the surface of the wafer can be simultaneously cleaned by use of the above mixture.

摘要翻译： 将硅晶片设置在处理槽中，并且HF水溶液和臭氧水分别通过HF阀和臭氧水阀从HF管线和臭氧水管线供应到处理槽中以产生混合物。 该混合物含有浓度为0.01％至1％的HF水溶液和浓度为0.1ppm至20ppm的臭氧水，对于硅和氧化硅膜具有基本上相同的蚀刻速率，并且在 10℃〜30℃的范围。可以通过使用上述混合物同时清洗形成在晶片表面的一部分上的硅晶片和氧化硅膜。

公开(公告)号：US5686314A

公开(公告)日：1997-11-11

申请号：US358246

申请日：1994-12-19

申请人： Kunihiro Miyazaki

发明人： Kunihiro Miyazaki

IPC分类号： G01N1/28 ,  G01N1/32 ,  G01N1/40 ,  G01N23/223 ,  G01N33/20 ,  G01N1/00 ,  G01N21/70

CPC分类号： G01N1/40 ,  G01N23/223 ,  G01N2223/076 ,  G01N33/20 ,  Y10S134/902 ,  Y10T436/25 ,  Y10T436/25125 ,  Y10T436/25375

摘要： A surface processing method effected before the total-reflection X-ray fluorescence analysis is effected is disclosed. The surface processing is to modify all of the contaminants attached at least to the measurement surface of the wafer into particle-shaped residues. For this purpose, the measurement surface of the wafer is first dissolved by hydrofluoric acid to form a large number of droplets on the measurement surface. Next, the thus formed droplets are dried with the position thereof kept unchanged. After the drying, contaminants attached to the measurement surface of the wafer are left as particle-shaped residues. After this, the measurement surface of the wafer is analyzed by the total-reflection X-ray fluorescence analyzing method.

摘要翻译： 公开了在进行全反射X射线荧光分析之前进行的表面处理方法。 表面处理是将至少附着到晶片的测量表面的所有污染物修改为颗粒状残余物。 为此，首先通过氢氟酸溶解晶片的测量表面，以在测量表面上形成大量的液滴。 接下来，将这样形成的液滴干燥，其位置保持不变。 干燥后，附着到晶片测量表面的污染物留作颗粒状残留物。 此后，通过全反射X射线荧光分析方法分析晶片的测量表面。

公开(公告)号：US5632868A

公开(公告)日：1997-05-27

申请号：US518418

申请日：1995-08-23

申请人： Minoru Harada ,  Ryoichi Shinjo ,  Manabu Tsujimura ,  Rempei Nakata ,  Kunihiro Miyazaki ,  Naruhiko Kaji ,  Yutaka Nakano

发明人： Minoru Harada ,  Ryoichi Shinjo ,  Manabu Tsujimura ,  Rempei Nakata ,  Kunihiro Miyazaki ,  Naruhiko Kaji ,  Yutaka Nakano

IPC分类号： C01B13/10 ,  C01B13/11 ,  C23C8/12 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448

CPC分类号： C23C16/448 ,  C01B13/10 ,  C01B13/11 ,  C23C16/402 ,  C23C16/4402 ,  C23C8/12 ,  C01B2201/60

摘要： Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices.Alternatively, ozonizer (10) which comprises an ozone generating cell (11) having an inlet (8) for supplying a feed gas, high voltage applying means (35) and an outlet (29) for discharging the ozone generated, and ozone delivery paths (30) and (31) for delivering the generated ozone is characterized in that oxygen (1) supplemented with 10-20 vol % of carbon dioxide and/or carbon monoxide (2) is used as the feed gas. The thus produced ozone is significantly low in the level of Cr compounds and, hence, can suitably be used in the formation of metal oxides, in particular, silicon oxide.

摘要翻译： 臭氧发生器（10），其在施加高压下向臭氧发生电池（11）供应进料气体，并且通过臭氧气体输送路径（由管道（14）和（15）组成）输送臭氧气体） 在臭氧发生电池（11）中产生的臭氧气体输送路径的特征在于，臭氧气体输送路径具有用于除去NOx，HF和SO x中的至少一种的装置（在附图中，用于除去NOx的装置），臭氧气体 从臭氧发生电池（11）通过所述去除装置，由此在所述臭氧气体中的NOx，HF和SO x中的至少一种在被输送到后续阶段之前被去除。 产物臭氧根本不被Cr化合物污染或污染不足，导致制造高度集成的半导体器件的任何实际问题。 或者，臭​​氧发生器（10）包括具有用于供应进料气体的入口（8）的臭氧发生电池（11），用于排出产生的臭氧的高压施加装置（35）和出口（29），以及臭氧输送路径 （30）和（31）用于输送生成的臭氧的特征在于，使用补充有10〜20体积％的二氧化碳和/或一氧化碳（2）的氧（1）作为原料气。 这样生成的臭氧在Cr化合物的含量上显着地很低，因此可以适当地用于形成金属氧化物，特别是氧化硅。

公开(公告)号：US4935039A

公开(公告)日：1990-06-19

申请号：US337813

申请日：1989-04-14

申请人： Kunihiro Miyazaki ,  Fumio Imai ,  Yoshinobu Yamaguchi

发明人： Kunihiro Miyazaki ,  Fumio Imai ,  Yoshinobu Yamaguchi

IPC分类号： C09K3/14

CPC分类号： C09K3/1463

摘要： An effective abrasive composition is provided for polishing a plastic article, particularly a plastic lens, to give a mirror surface thereto. This abrasive composition comprises water, an aluminous abrasive and at least one polishing accelerator selected from the group consisting of aluminum oxalate and aluminum lactate, optionally with at least one sedimentation preventing agent selected from the group consisting of crystalline cellulose and colloidal alumnia.

摘要翻译： 提供了一种有效的研磨组合物，用于抛光塑料制品，特别是塑料透镜，以给其提供镜面。 该磨料组合物包含水，高铝磨料和选自草酸铝和乳酸铝的至少一种抛光促进剂，任选具有至少一种选自结晶纤维素和胶体沉淀物的沉降防止剂。

公开(公告)号：US08841205B2

公开(公告)日：2014-09-23

申请号：US13217736

申请日：2011-08-25

申请人： Masaki Kamimura ,  Takashi Shimizu ,  Kunihiro Miyazaki

发明人： Masaki Kamimura ,  Takashi Shimizu ,  Kunihiro Miyazaki

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/31 ,  G05B19/418 ,  H01L21/66

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/32194 ,  G05B2219/32198 ,  G05B2219/45031 ,  Y02P90/22

摘要： A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.

摘要翻译： 一种半导体器件的制造方法，包括：在第一处理装置中以第一处理顺序对多个晶片执行第一处理; 在所述第一处理中获得关于所述多个晶片中的每一个的处理量; 通过在第一处理之后的第二处理装置中的第二处理来获得关于多个晶片中的每一个的处理量; 通过所述第一处理，通过所述第一处理和相对于所述多个晶片中的每一个处理的量，通过所述第二处理来确定与所述第一处理顺序不同的第二处理顺序相对于所述多个晶片中的每一个的处理量; 以及在所述第二处理装置中以所述第二处理顺序对所述多个晶片执行所述第二处理。